US5582947A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Glow discharge process for making photoconductive member
Assignee: Canon Inc
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Filing: 1995-06-06
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Granted: 1996-12-10
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Expires: 2015-06-06
Abstract
Abstract A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing carbon atoms in at least a part thereof, the content of the carbon atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.
Inventors
- 👤 Shigeru Shirai
- 👤 Junichiro Kanbe
- 👤 Tadaji Fukuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:56
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08228; H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
207 words
A process for producing a photoconductive member having a substrate and a layer on the surface of the substrate comprising an amorphous material comprising silicon atoms as a matrix and at least one of hydrogen atoms and halogen atoms and having photoconductivity, which comprises the steps of: (a) providing the substrate in a deposition chamber; (b) introducing into the deposition chamber at least a starting gas for incorporating carbon atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber to form on the substrate a lower layer region comprising carbon atoms in a distribution content of C 1 ; (c) introducing into the deposition chamber a starting gas for incorporating silicon atoms without introduction of a starting gas for incorporating carbon atoms and generating a glow discharge in the deposition chamber to form on the lower layer region an intermediate layer region not including carbon atoms; and (d) introducing into the deposition chamber a starting gas for incorporating carbon atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber to form on the intermediate layer region an upper layer region comprising carbon atoms in a distribution content of C 1 .
Claim 2
Dependent Claim
207 words
A process for producing a photoconductive member having a substrate and a layer on the surface of the substrate comprising an amorphous material comprising silicon atoms as a matrix and at least one of hydrogen atoms and halogen atoms and having photoconductivity, which comprises the steps of: (a) providing the substrate in a deposition chamber; (b) introducing into the deposition chamber at least a starting gas for incorporating carbon atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber to form on the substrate a lower layer region comprising carbon atoms in a distribution content of C 1 ; (c) introducing into the deposition chamber a starting gas for incorporating silicon atoms without introduction of a starting gas for incorporating carbon atoms and generating a glow discharge in the deposition chamber to form on the lower layer region an intermediate layer region not including carbon atoms; and (d) introducing into the deposition chamber a starting gas for incorporating carbon atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber to form on the intermediate layer region an upper layer region comprising carbon atoms in a distribution content of C 1 .
Claim 3
Dependent Claim
53 words
The process according to claim 1, further comprising the step of introducing into the deposition chamber a starting gas for incorporating at least one of nitrogen atoms and oxygen atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber between the steps (a) and (b).
Claim 4
Dependent Claim
24 words
The process according to claim 1, wherein the step (b) is conducted with a single starting gas containing both carbon atoms and silicon atoms.
Claim 5
Dependent Claim
23 words
The process according to claim 1, wherein the step (d) is conducted with a single starting gas containing carbon atoms and silicon atoms.
Claim 6
Dependent Claim
27 words
The process according to claim 1, wherein the steps (b) and (d) are each conducted with a single starting gas containing both carbon atoms and silicon atoms.
Claim 7
Dependent Claim
24 words
The process according to claim 1, further comprising introducing a gas for incorporating a substance for controlling the conductivity type in the step (b).
Claim 8
Dependent Claim
24 words
The process according to claim 1, further comprising introducing a gas for incorporating a substance for controlling the conductivity type in the step (d).
Claim 9
Dependent Claim
28 words
The process according to claim 1, further comprising introducing a gas for incorporating a substance for controlling the conductivity type in each of the steps (b) and (d).
Claim 10
Dependent Claim
51 words
The process according to claim 1, wherein the starting gas for incorporating carbon atoms comprises at least one starting gas selected from the group consisting of saturated hydrocarbons having 1 to 5 carbon atoms, ethylenic hydrocarbons having 2 to 5 carbon atoms and acetylenic hydrocarbons having 2 to 4 carbon atoms.
Claim 11
Dependent Claim
36 words
The process according to claim 6, wherein the starting gas for incorporating a substance for controlling the conductivity type comprises a starting gas comprising an element belonging to Group III or V of the Periodic Table.
Claim 12
Dependent Claim
36 words
The process according to claim 7, wherein the starting gas for incorporating a substance for controlling the conductivity type comprises a starting gas comprising an element belonging to Group III or V of the Periodic Table.
Claim 13
Dependent Claim
36 words
The process according to claim 8, wherein the starting gas for incorporating a substance for controlling the conductivity type comprises a starting gas comprising an element belonging to Group III or V of the Periodic Table.
Claim 14
Dependent Claim
20 words
The process according to claim 1, wherein the gas for incorporating silicon atoms comprises a silicon hydride or silicon halide.
Claim 15
Dependent Claim
48 words
The process according to claim 1, further comprising in each of the steps (b), (c) and (d) optionally introducing at least one gas selected from the group consisting of a gas containing hydrogen atoms, a gas containing halogen atoms, argon gas and helium gas into the deposition chamber.
Claim 16
Dependent Claim
15 words
The process according to claim 14, wherein the gas containing hydrogen atoms is hydrogen gas.
Claim 17
Dependent Claim
51 words
The process according to claim 14, wherein the gas containing halogen atoms is at least one gas selected from the group consisting of fluorine gas, chlorine gas, bromine gas, iodine gas, BrF, ClF, ClF 3 , BrF 3 , BrF 5 , IF 7 , IF 5 , ICl and IBr.
Claim 18
Dependent Claim
40 words
The process according to claim 3, wherein the silicon hydride gas comprises at least one gas selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 and Si 4 H 10 .
Claim 19
Dependent Claim
23 words
The process according to claim 1, wherein the atmosphere in which the glow discharge is generated in the step (b) comprises oxygen atoms.
Claim 20
Dependent Claim
23 words
The process according to claim 1, wherein the atmosphere in which the glow discharge is generated in the step (d) comprises oxygen atoms.
Claim 21
Dependent Claim
160 words
A process for producing a photoconductive member having a substrate and a layer on the surface of the substrate comprising an amorphous material comprising silicon atoms as a matrix and at least one of hydrogen atoms and halogen atoms and having photoconductivity, which comprises the steps of: (a) providing the substrate in a deposition chamber; (b) introducing into the deposition chamber at least a starting gas for incorporating carbon atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber to form on the substrate a lower layer region comprising carbon atoms in a distribution content of C 1 ; and (c) introducing into the deposition chamber a starting gas for incorporating carbon atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber to form on the lower layer region an upper layer region comprising carbon atoms in a distribution content of C 2 .
Claim 22
Dependent Claim
160 words
A process for producing a photoconductive member having a substrate and a layer on the surface of the substrate comprising an amorphous material comprising silicon atoms as a matrix and at least one of hydrogen atoms and halogen atoms and having photoconductivity, which comprises the steps of: (a) providing the substrate in a deposition chamber; (b) introducing into the deposition chamber at least a starting gas for incorporating carbon atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber to form on the substrate a lower layer region comprising carbon atoms in a distribution content of C 1 ; and (c) introducing into the deposition chamber a starting gas for incorporating carbon atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber to form on the lower layer region an upper layer region comprising carbon atoms in a distribution content of C 2 .
Claim 23
Dependent Claim
53 words
The process according to claim 20, further comprising the step of introducing into the deposition chamber a starting gas for incorporating at least one of nitrogen atoms and oxygen atoms and a starting gas for incorporating silicon atoms and generating a glow discharge in the deposition chamber between the steps (a) and (b).
Claim 24
Dependent Claim
24 words
The process according to claim 20, wherein the step (b) is conducted with a single starting gas containing both carbon atoms and silicon atoms.
Claim 25
Dependent Claim
23 words
The process according to claim 20, wherein the step (c) is conducted with a single starting gas containing carbon atoms and silicon atoms.
Claim 26
Dependent Claim
27 words
The process according to claim 20, wherein the steps (b) and (c) are each conducted with a single starting gas containing both carbon atoms and silicon atoms.
Claim 27
Dependent Claim
24 words
The process according to claim 20, further comprising introducing a gas for incorporating a substance for controlling the conductivity type in the step (b).
Claim 28
Dependent Claim
24 words
The process according to claim 20, further comprising introducing a gas for incorporating a substance for controlling the conductivity type in the step (c).
Claim 29
Dependent Claim
26 words
The process according to claim 20, further comprising introducing a gas for incorporating a substance for controlling the conductivity type in the steps (b) and (c).
Claim 30
Dependent Claim
51 words
The process according to claim 20, wherein the starting gas for incorporating carbon atoms comprises at least one starting gas selected from the group consisting of saturated hydrocarbons having 1 to 5 carbon atoms, ethylenic hydrocarbons having 2 to 5 carbon atoms and acetylenic hydrocarbons having 2 to 4 carbon atoms.
Claim 31
Dependent Claim
36 words
The process according to claim 20, wherein the starting gas for incorporating a substance for controlling the conductivity type comprises a starting gas comprising an element belonging to Group III or V of the Periodic Table.
Claim 32
Dependent Claim
36 words
The process according to claim 26, wherein the starting gas for incorporating a substance for controlling the conductivity type comprises a starting gas comprising an element belonging to Group III or V of the Periodic Table.
Claim 33
Dependent Claim
36 words
The process according to claim 27, wherein the starting gas for incorporating a substance for controlling the conductivity type comprises a starting gas comprising an element belonging to Group III or V of the Periodic Table.
Claim 34
Dependent Claim
20 words
The process according to claim 20, wherein the gas for incorporating silicon atoms comprises a silicon hydride or silicon halide.
Claim 35
Dependent Claim
47 words
The process according to claim 20, further comprising in each of the steps (b) and (c) optionally introducing at least one gas selected from the group consisting of a gas containing hydrogen atoms, a gas containing halogen atoms, argon gas and helium gas into the deposition chamber.
Claim 36
Dependent Claim
15 words
The process according to claim 33, wherein the gas containing hydrogen atoms is hydrogen gas.
Claim 37
Dependent Claim
51 words
The process according to claim 33, wherein the gas containing halogen atoms is at least one gas selected from the group consisting of fluorine gas, chlorine gas, bromine gas, iodine gas, BrF, ClF, ClF 3 , BrF 3 , BrF 5 , IF 7 , IF 5 , ICl and IBr.
Claim 38
Dependent Claim
40 words
The process according to claim 32, wherein the silicon hydride gas comprises at least one gas selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 and Si 4 H 10 .
Claim 39
Dependent Claim
23 words
The process according to claim 20, wherein the atmosphere in which the glow discharge is generated in the step (b) comprises oxygen atoms.
Claim 40
Dependent Claim
23 words
The process according to claim 20, wherein the atmosphere in which the glow discharge is generated in the step (c) comprises oxygen atoms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |