Patent US5580802A successfully refreshed from Google Patents.
US5580802A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon-on-insulator gate-all-around mosfet fabrication methods
Assignee: Aerospace Corp
•
Filing: 1995-04-13
•
Granted: 1996-12-03
•
Expires: 2015-04-13
Abstract
Abstract A silicon-on-insulator (SOI) gate-all-around (GAA) metal-oxide-semiconductor field-effect transistor (MOSFET) includes a source, channel and drain surrounded by a top gate and a buried bottom gate, the latter of which also has application for other buried structures and is formed on a bottom gate dielectric which was formed on source, channel and drain semiconductor layer of an SOI wafer. After forming a planar bottom insulator layer on the bottom gate and bottom gate dielectric, the SOI wafer is flip-bonded onto an oxide layer of a bulk silicon wafer, thereby encapsulating the buried bottom gate electrode in insulating oxide, after which the SOI substrate and the etch-stop SOI oxide layer are removed to expose the SOI semiconductor layer which is processed to form the source, drain and channel in a mesa structure on which is deposited a top gate dielectric, a top gate, and top gate insulator as well as four conductors for connecting to the source, drain, top gate and bottom gate. The latter two electrodes can be independently controlled or commonly controlled for enhanced operation of GAA MOSFET having improved isolation and reduced parasitic capacitance due to the use of encapsulating insulation layers of the merged wafer consisting of the bonded SOI wafer and bulk silicon wafer.
Inventors
- 👤 Donald C. Mayer
- 👤 Kenneth P. MacWilliams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 19:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D30/6735; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
131 words
A method of forming a buried conductive structure, said method comprising the steps of forming a bottom insulator layer on a semiconductor layer of an SOI wafer comprising said semiconductor layer on an SOI insulator layer on an SOI substrate, forming said buried conductive structure on said bottom insulator layer, said buried conductive structure is a patterned structure, forming a top insulator layer on said buried conductive structure, planarizing a top surface of said top insulator layer, forming a bulk insulator layer of a bulk wafer comprising said bulk insulator layer on a bulk substrate, and flip-bonding by thermal heating to fuse said top insulator layer of said SOI wafer to said bulk insulator layer of the bulk wafer to form a merged wafer having said buried conductive structure encapsulated therein.
Claim 2
Independent Claim
131 words
A method of forming a buried conductive structure, said method comprising the steps of forming a bottom insulator layer on a semiconductor layer of an SOI wafer comprising said semiconductor layer on an SOI insulator layer on an SOI substrate, forming said buried conductive structure on said bottom insulator layer, said buried conductive structure is a patterned structure, forming a top insulator layer on said buried conductive structure, planarizing a top surface of said top insulator layer, forming a bulk insulator layer of a bulk wafer comprising said bulk insulator layer on a bulk substrate, and flip-bonding by thermal heating to fuse said top insulator layer of said SOI wafer to said bulk insulator layer of the bulk wafer to form a merged wafer having said buried conductive structure encapsulated therein.
Claim 3
Dependent Claim
20 words
The method of claim 1 further comprising the steps of removing said SOI substrate, and removing said SOI insulator layer.
Claim 4
Dependent Claim
49 words
The method of claim 1 wherein said SOI insulator layer, said bulk insulator layer, said bottom insulator layer, and said top insulator layer are oxide layers, said buried conductive structure is a polysilicon conductor, said semiconductor layer is doped silicon, and said bulk wafer is a bulk silicon wafer.
Claim 5
Independent Claim
258 words
A method of forming a patterned buried conductive structure in a field effect transistor, said method comprising the steps of forming a bottom insulator layer on a semiconductor layer of an SOI wafer comprising said semiconductor layer on an SOI insulator layer on an SOI substrate, forming a bottom gate electrode on said bottom insulator layer, said bottom gate electrode is said patterned buried conductive structure, forming a top insulator layer on said bottom gate electrode, planarizing a top surface of said top insulator layer, forming a bulk insulator layer of a bulk wafer comprising said bulk insulator layer on a bulk substrate, flip-bonding by thermal heating to fuse said top insulator layer of said SOI wafer to said bulk insulator layer of the bulk wafer to form a merged wafer encapsulating said bottom gate electrode therein, said bottom gate electrode is a buried patterned conductive structure, removing said SOI substrate, removing said SOI insulator layer, forming a mesa patterned in the semiconductor layer, said mesa defining a source region, a drain region and a channel region, said mesa formed to define said channel region above said bottom gate electrode, forming a top gate dielectric over said mesa, forming a top gate electrode over said top gate dielectric, forming a top gate insulator layer over said top gate electrode, said source region, said drain region, and said bottom gate dielectric, and forming four conductors respectively connected to said source region, said drain region, said bottom gate electrode, and said top gate electrode to define said field effect transistor.
Claim 6
Independent Claim
258 words
A method of forming a patterned buried conductive structure in a field effect transistor, said method comprising the steps of forming a bottom insulator layer on a semiconductor layer of an SOI wafer comprising said semiconductor layer on an SOI insulator layer on an SOI substrate, forming a bottom gate electrode on said bottom insulator layer, said bottom gate electrode is said patterned buried conductive structure, forming a top insulator layer on said bottom gate electrode, planarizing a top surface of said top insulator layer, forming a bulk insulator layer of a bulk wafer comprising said bulk insulator layer on a bulk substrate, flip-bonding by thermal heating to fuse said top insulator layer of said SOI wafer to said bulk insulator layer of the bulk wafer to form a merged wafer encapsulating said bottom gate electrode therein, said bottom gate electrode is a buried patterned conductive structure, removing said SOI substrate, removing said SOI insulator layer, forming a mesa patterned in the semiconductor layer, said mesa defining a source region, a drain region and a channel region, said mesa formed to define said channel region above said bottom gate electrode, forming a top gate dielectric over said mesa, forming a top gate electrode over said top gate dielectric, forming a top gate insulator layer over said top gate electrode, said source region, said drain region, and said bottom gate dielectric, and forming four conductors respectively connected to said source region, said drain region, said bottom gate electrode, and said top gate electrode to define said field effect transistor.
Claim 7
Dependent Claim
31 words
The method of claim 4 wherein said forming four conductors step, two of said four conductors are connected together to connect together said top gate electrode and said bottom gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-03 | 2000-06-03 | 2000-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-03 | 2004-06-03 | 2004-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-03 | 2008-06-03 | 2008-12-03 | $7700.00 | Window Closed / Lapsed |