Method for manufacturing an array of thin film actuated mirrors

Claim 1

A method for manufacturing an array of M×N thin film actuated mirrors for use in an optical projection system, the method comprising the steps of: (a) providing a base having a top surface; (b) forming a separation layer on the top surface of the base; (c) depositing a first thin film layer, made of an electrically conductive and light reflecting material, capable of functioning as a mirror as well as a bias electrode in the thin film actuated mirrors, on top of the separation layer; (d) forming a thin film electrodisplacive layer on top of the first thin film layer; (e) heat treating the thin film electrodisplacive layer to allow a phase transition thereof to take place; (f) depositing a second thin film layer, made of an electrically conductive material, capable of functioning as a signal electrode in the thin film actuated mirrors, on top of the thin film electrodisplacive layer; (g) forming an elastic layer, made of an insulating material, on top of the second thin film layer; (h) forming a thin film sacrificial layer on top of the elastic layer; (i) forming an array of M×N empty slots by removing portions of the sacrificial layer, each of the empty slots extending from top of the sacrificial layer to top of the elastic layer; (j) forming a supporting layer, made of a poly-silicon, on top of the sacrificial layer, wherein each of the empty slots is also filled with the poly-silicon; (k) forming an array of M×N conduits, each of the conduits extending from top of the supporting layer to top of the second thin film layer, each of the conduits passing through each of the empty slots to thereby form a multilayer structure; (l) forming an array of M×N transistors on top of the multilayer structure, each of the transistors being electrically connected to each of the conduits through a conduction line pattern to thereby form a semifinished actuated mirror structure; (m) attaching an active matrix to the semifinished actuated mirror structure; (n) separating the base from the semifinished actuated mirror structure by removing the separation layer to thereby form an actuated mirror structure; (o) patterning the actuated mirror structure into an array of M×N semifinished actuated mirrors; and (p) removing the thin film sacrificial layer in each of the semifinished actuated mirrors to thereby form the array of M×N thin film actuated mirrors.

Claim 2

A method for manufacturing an array of M×N thin film actuated mirrors for use in an optical projection system, the method comprising the steps of: (a) providing a base having a top surface; (b) forming a separation layer on the top surface of the base; (c) depositing a first thin film layer, made of an electrically conductive and light reflecting material, capable of functioning as a mirror as well as a bias electrode in the thin film actuated mirrors, on top of the separation layer; (d) forming a thin film electrodisplacive layer on top of the first thin film layer; (e) heat treating the thin film electrodisplacive layer to allow a phase transition thereof to take place; (f) depositing a second thin film layer, made of an electrically conductive material, capable of functioning as a signal electrode in the thin film actuated mirrors, on top of the thin film electrodisplacive layer; (g) forming an elastic layer, made of an insulating material, on top of the second thin film layer; (h) forming a thin film sacrificial layer on top of the elastic layer; (i) forming an array of M×N empty slots by removing portions of the sacrificial layer, each of the empty slots extending from top of the sacrificial layer to top of the elastic layer; (j) forming a supporting layer, made of a poly-silicon, on top of the sacrificial layer, wherein each of the empty slots is also filled with the poly-silicon; (k) forming an array of M×N conduits, each of the conduits extending from top of the supporting layer to top of the second thin film layer, each of the conduits passing through each of the empty slots to thereby form a multilayer structure; (l) forming an array of M×N transistors on top of the multilayer structure, each of the transistors being electrically connected to each of the conduits through a conduction line pattern to thereby form a semifinished actuated mirror structure; (m) attaching an active matrix to the semifinished actuated mirror structure; (n) separating the base from the semifinished actuated mirror structure by removing the separation layer to thereby form an actuated mirror structure; (o) patterning the actuated mirror structure into an array of M×N semifinished actuated mirrors; and (p) removing the thin film sacrificial layer in each of the semifinished actuated mirrors to thereby form the array of M×N thin film actuated mirrors.