Frequency characteristic of semiconductor device in ultra-high frequency band

Claim 2

An ultra-high frequency semiconductor device comprising: Field Effect transistor (FET) chips, each including FET elements, said FET chips being connected to each other by bonding wires; capacitor chips provided on input and output sides of said FET chips and including a plurality of chip capacitors each of which being connected to corresponding ones of said FET elements; and dielectric substance substrates, each of which has open stub patterns and a microstrip transmission line formed thereon, each said microstrip transmission line being connected to said corresponding chip capacitors by bonding wires; wherein each of said chip capacitors has a length predetermined based on a frequency band used in practice; wherein each of said microstrip transmission lines has branch ports provided with a gap; and wherein said semiconductor device further comprises a bonding wire connected between the branch ports.

Claim 3

The ultra-high frequency semiconductor device according to claim 1, further comprising bonding wires for connecting, on said input and output sides, adjacent ones of said plurality of chip capacitors.

Claim 4

The ultra-high frequency semiconductor device according to claim 1, wherein said length is predetermined such that an input impedance of each of said chip capacitors is capacitive at an upper limit frequency of the frequency band.

Claim 5

An ultra-high frequency semiconductor device comprising: Field Effect transistor (FET) chips, each including FET elements, said FET chips being connected to each other by bonding wires, and an internal matching circuit having a concentrated parameter circuit and a distributed parameter circuit; wherein said concentrated parameter circuit includes capacitor chips provided on input and output sides of said FET chips and including a plurality of chip capacitors each of which is connected to said corresponding FET elements; wherein each of said chip capacitors has a length predetermined based on a frequency band used in practice; wherein said distributed parameter circuit includes a microstrip line having branch ports provided with a gap; and wherein said semiconductor device further comprises a bonding wire connected between the branch ports.

Claim 6

An ultra-high frequency semiconductor device comprising: Field Effect transistor (FET) chips, each including FET elements, said FET chips being connected to each other by bonding wires, and an internal matching circuit having a concentrated parameter circuit and a distributed parameter circuit; wherein said concentrated parameter circuit includes capacitor chips provided on input and output sides of said FET chips and including a plurality of chip capacitors each of which is connected to said corresponding FET elements; wherein each of said chip capacitors has a length predetermined based on a frequency band used in practice; wherein said distributed parameter circuit includes a microstrip line having branch ports provided with a gap; and wherein said semiconductor device further comprises a bonding wire connected between the branch ports.

Claim 7

The ultra-high frequency semiconductor device according to claim 4, further comprising bonding wires for connecting, on said input and output sides, adjacent ones of said plurality of chip capacitors.

Claim 8

The ultra-high frequency semiconductor device according to claim 4, wherein said length is predetermined such that an input impedance of each of said chip capacitors is capacitive at an upper limit frequency of the frequency band.

Claim 9

An ultra-high frequency semiconductor device comprising: FET chips each of which includes GaAs MES FET elements and which are connected to each other by bonding wires, capacitor chips provided on input and output sides of said FET chips, wherein each of said capacitor chips includes a dielectric substance, a lower surface metalized pattern formed on a whole lower surface of said dielectric substance and upper surface metalized patterns, wherein said lower surface metalized pattern, said dielectric substance, and each of said upper surface metalized patterns constitute one chip capacitor, and wherein said each upper surface metalized pattern is connected to said corresponding GaAs MES FET elements, and dielectric substance substrates, each of which has open stub patterns and a microstrip transmission line formed thereon, and each said microstrip transmission line being connected to said corresponding chip capacitors by bonding wires; wherein a length of said upper surface metalized pattern is predetermined based on a frequency band used in practice; wherein each of said microstrip transmission lines has branch ports provided with a gap; and wherein said semiconductor device further comprises a bonding wire connected between the branch ports.

Claim 10

An ultra-high frequency semiconductor device comprising: FET chips each of which includes GaAs MES FET elements and which are connected to each other by bonding wires, capacitor chips provided on input and output sides of said FET chips, wherein each of said capacitor chips includes a dielectric substance, a lower surface metalized pattern formed on a whole lower surface of said dielectric substance and upper surface metalized patterns, wherein said lower surface metalized pattern, said dielectric substance, and each of said upper surface metalized patterns constitute one chip capacitor, and wherein said each upper surface metalized pattern is connected to said corresponding GaAs MES FET elements, and dielectric substance substrates, each of which has open stub patterns and a microstrip transmission line formed thereon, and each said microstrip transmission line being connected to said corresponding chip capacitors by bonding wires; wherein a length of said upper surface metalized pattern is predetermined based on a frequency band used in practice; wherein each of said microstrip transmission lines has branch ports provided with a gap; and wherein said semiconductor device further comprises a bonding wire connected between the branch ports.

Claim 11

The ultra-high frequency semiconductor device according to claim 7, further comprising bonding wires connecting adjacent ones of said upper surface metalized patterns of said chip capacitors.

Claim 12

The ultra-high frequency semiconductor device according to claim 7, wherein said length is predetermined such that an input impedance of each of said chip capacitors is capacitive at an upper limit frequency of the frequency band.

Claim 13

An ultra-high frequency semiconductor device, comprising: Field Effect transistor (FET) chips each of which includes FET elements and which are connected to each other by bonding wires, and an internal matching circuit having a concentrated parameter circuit and a distributed parameter circuit; wherein said concentrated parameter circuit includes capacitor chips provided on input and output sides of said FET chips and includes a plurality of chip capacitors each of which is connected to said corresponding FET elements; wherein each of said chip capacitors has a length predetermined such that a resonance frequency does not exist in a frequency band used in practice; wherein said distributed parameter circuit includes a microstrip line having branch ports provided with a gap; and wherein said semiconductor device further comprises a bonding wire connected between the branch ports.

Claim 14

An ultra-high frequency semiconductor device, comprising: Field Effect transistor (FET) chips each of which includes FET elements and which are connected to each other by bonding wires, and an internal matching circuit having a concentrated parameter circuit and a distributed parameter circuit; wherein said concentrated parameter circuit includes capacitor chips provided on input and output sides of said FET chips and includes a plurality of chip capacitors each of which is connected to said corresponding FET elements; wherein each of said chip capacitors has a length predetermined such that a resonance frequency does not exist in a frequency band used in practice; wherein said distributed parameter circuit includes a microstrip line having branch ports provided with a gap; and wherein said semiconductor device further comprises a bonding wire connected between the branch ports.

Claim 15

The ultra-high frequency semiconductor device according to claim 10, further comprising bonding wires connecting, on said input and output sides, adjacent ones of said chip capacitors.

Claim 16

The ultra-high frequency semiconductor device according to claim 10, wherein said length is predetermined such that an input impedance of each of said chip capacitors is capacitive at an upper limit frequency of the frequency band.

Claim 17

The ultra-high frequency semiconductor device according to claim 10, wherein said length is shorter than 0.25 λ g and longer than 0.15 λ g , where λ g is a wave length corresponding to a center frequency of the frequency band.