EP0411919A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Matching circuit for high frequency transistor
Assignee: Panasonic Holdings Corp
•
Filing: 1990-07-31
•
Granted: —
•
Expires: 2010-07-31
Abstract
Abstract In a matching circuit for a high-frequency transistor (101), using a microstrip line for the main line (104,105) and having a high-frequency transistor side main line shaped in a taper form (106,107), a thin-film capacitor (108,109) and a grounding circuit (112,113) are disposed between the tapcr part and the ground. The length of the parts of the thin-film capacitor is different in the signal traveling directions or the shape of the grounding circuit is different so that the impedance is matched at the output position of the thin-film capacitor part, while the spatial phase difference of high-frequency signals can be compensated at thc same time.
Inventors
- 👤 Kazuo Eda
- 👤 Tetsuji Miwa
- 👤 Yutaka Taguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:28
CPC Classifications
H; H01; H01P; H01P5/00; H01P5/02; H01P5/022; H01P5/028
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
99 words
A matching circuit for a high-frequency transistor, formed on a substrate and comprising a main line composed of a microstrip line, a high-frequency transistor side main line shaped in taper, and a thin-film capacitor part made of a dielectric different in the dielectric constant from the substrate and disposed between the taper part and the ground, wherein a length of the thin-film capacitor part in a traveling direction of a high-frequency signal is continuously different in the taper parts so that a phase difference of the high-frequency signal is compensated at an output position of the thin-film capacitor part.
Claim 2
Dependent Claim
99 words
A matching circuit for a high-frequency transistor, formed on a substrate and comprising a main line composed of a microstrip line, a high-frequency transistor side main line shaped in taper, and a thin-film capacitor part made of a dielectric different in the dielectric constant from the substrate and disposed between the taper part and the ground, wherein a length of the thin-film capacitor part in a traveling direction of a high-frequency signal is continuously different in the taper parts so that a phase difference of the high-frequency signal is compensated at an output position of the thin-film capacitor part.
Claim 3
Dependent Claim
56 words
A matching circuit according to claim 1, wherein a dielectric having a dielectric constant smaller than that of the substrate is used as a dielectric of the thin-film capacitor part, and the length of the thin-film capacitor in the travelling direction of the high-frequency signal is shorter as approaching the central part of the taper part.
Claim 4
Dependent Claim
57 words
A matching circuit according to claim 1, wherein a dielectric having a dielectric constant larger than that of the substrate is used as a dielectric of the thin-film capacitor part, and the length of the thin-film capacitor in the traveling direction of the high frequency signal is longer as approaching the central part of the taper part.
Claim 5
Dependent Claim
89 words
A matching circuit for a high-frequency transistor, formed on a substrate and comprising a main line composed of a microstrip line, a high-frequency transistor side main line shaped in taper, and a series circuit of a thin-film capacitor and a closed microstrip line disposed between the taper part and the ground, wherein a length of the closed microstrip line to the ground is different at parts of the thin-film capacitor so that a phase difference of a high-frequency signal is compensated at an output position of the thin-film capacitor.
Claim 6
Dependent Claim
89 words
A matching circuit for a high-frequency transistor, formed on a substrate and comprising a main line composed of a microstrip line, a high-frequency transistor side main line shaped in taper, and a series circuit of a thin-film capacitor and a closed microstrip line disposed between the taper part and the ground, wherein a length of the closed microstrip line to the ground is different at parts of the thin-film capacitor so that a phase difference of a high-frequency signal is compensated at an output position of the thin-film capacitor.
Claim 7
Dependent Claim
57 words
A matching circuit according to claim 4, wherein a dielectric having a dielectric constant larger than that of the substrate is used as a dielectric of the thin-film capacitor, and the length of the closed microstrip line to the ground is 1/4 wavelength or shorter and becomes shorter as approaching the central part of the thin-film capacitor.
Claim 8
Dependent Claim
57 words
A matching circuit according to claim 4, wherein a dielectric having a dielectric constant smaller than that of the substrate is used as a dielectric of the thin-film capacitor, and the length of the closed microstrip line to the ground is 1/4 wavelength or shorter and becomes longer as approaching the central part of the thin-film capacitor.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.