Patent US5571749A successfully refreshed from Google Patents.
US5571749A
Expired / Lapsed
US
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Method and apparatus for forming deposited film
Assignee: Canon Inc
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Filing: 1994-12-28
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Granted: 1996-11-05
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Expires: 2014-12-28
Abstract
Abstract A plasma CVD method adapted to a roll-to-roll process or the like wherein the change rate of the temperature of the substrate before and after an i-type semiconductor layer is deposited is made rapid so as to prevent diffusion of impurities occurring due to annealing, by constituting the apparatus structure in such a manner that the deposited film is formed on an elongated substrate by the plasma CVD method while heating the elongated substrate moving in an i-layer forming discharge chamber at a rate of 4 DEG C./second or higher immediately in front of an inlet to the discharge chamber and cooling the same at a rate of 4 DEG C./second or higher immediately at the outlet of the discharge chamber so that a stacked-layer type photovoltaic device having a large area and free from scattering of the characteristics is continuously formed without deterioration of the characteristics occurring due to dopant diffusion.
Inventors
- 👤 Koichi Matsuda
- 👤 Takaharu Kondo
- 👤 Yusuke Miyamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:44
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10P; H10P14/00; H10P14/20; C; C23; C23C; C23C16/00; C23C16/44; C23C16/46; C23C16/463; C23C16/50; C23C16/54; C23C16/545; H10F71/00; H10F71/10; H10F71/103; H10F71/107; H10P14/24; H10P14/29; H10P14/2901; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3208; H10P14/3211; H10P14/3212; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; H10P14/3412; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 55
Claim 1
Independent Claim
69 words
A process for forming a deposited semiconductor film by glow discharge on a continuously moving belt-like substrate which has a first semiconductor layer deposited thereon, which comprises the steps of: heating said moving substrate immediately before said substrate enters a glow discharge region; forming said deposited semiconductor film on said moving substrate in said glow discharge region; and cooling said moving substrate after passing through said glow discharge region.
Claim 2
Dependent Claim
69 words
A process for forming a deposited semiconductor film by glow discharge on a continuously moving belt-like substrate which has a first semiconductor layer deposited thereon, which comprises the steps of: heating said moving substrate immediately before said substrate enters a glow discharge region; forming said deposited semiconductor film on said moving substrate in said glow discharge region; and cooling said moving substrate after passing through said glow discharge region.
Claim 3
Dependent Claim
28 words
A process for forming a deposited film according to claim 1, further comprising a step of maintaining the temperature of said moving substrate in said glow discharge region.
Claim 4
Dependent Claim
25 words
A process for forming a deposited film according to claim 1, wherein said moving substrate is heated at a rate of 4° C./second or higher.
Claim 5
Dependent Claim
25 words
A process for forming a deposited film according to claim 1, wherein said moving substrate is cooled at a rate of 4° C./second or higher.
Claim 6
Dependent Claim
26 words
A process foe forming a deposited film according to claim 1, wherein said deposited film is deposited at a rate of 0.1 nm/second to 20 nm/second.
Claim 7
Dependent Claim
21 words
A process for forming a deposited film according to claim 1, wherein said glow discharge is caused by microwave plasma CVD.
Claim 8
Dependent Claim
39 words
A process for forming a deposited film according to claim 1, further comprising a step of forming a second semiconductor layer having a conductivity type different from said first semiconductor layer on said deposited film after said cooling step.
Claim 9
Dependent Claim
21 words
A process for forming a deposited film according to claim 10, wherein the first semiconductor layer has a first conductivity type.
Claim 10
Dependent Claim
37 words
A process for forming a deposited film according to claim 8, wherein the second semiconductor layer formed after the cooling step has a second conductivity type opposite to the first conductivity type of the first semiconductor layer.
Claim 11
Dependent Claim
26 words
A process for forming a deposited film according to claim 10, wherein the second semiconductor layer formed after the cooling step is an i-type semiconductor layer.
Claim 12
Dependent Claim
23 words
A process for forming a deposited film according to claim 10, wherein the i-type semiconductor layer is formed by high frequency plasma CVD.
Claim 13
Dependent Claim
22 words
A process for forming a deposited film according to claim 1, wherein said belt-like substrate is cooled by a flowing cooling medium.
Claim 14
Dependent Claim
23 words
A process for forming a deposited film according to claim 1, wherein said deposited film formed by glow discharge is an i-type semiconductor.
Claim 15
Dependent Claim
30 words
A process for forming a deposited film according to claim 13, wherein a raw material gas for forming the i-type semiconductor layer comprises a gasifiable compound which contains silicon atoms.
Claim 16
Dependent Claim
24 words
A process for forming a deposited film according to claim 14, wherein the raw material gas further comprises a compound which contains carbon atoms.
Claim 17
Dependent Claim
24 words
A process for forming a deposited film according to claim 14, wherein the raw material gas further comprises a compound which contains nitrogen atoms.
Claim 18
Dependent Claim
24 words
A process for forming a deposited film according to claim 14, wherein the raw material gas further comprises a compound which contains oxygen atoms.
Claim 19
Dependent Claim
30 words
A process for forming a deposited film according to claim 13, wherein a raw material gas for forming the i-type semiconductor layer comprises a gasifiable compound which contains germanium atoms.
Claim 20
Dependent Claim
24 words
A process for forming a deposited film according to claim 18, wherein the raw material gas further comprises a compound which contains carbon atoms.
Claim 21
Dependent Claim
24 words
A process for forming a deposited film according to claim 18, wherein the raw material gas further comprises a compound which contains nitrogen atoms.
Claim 22
Dependent Claim
24 words
A process for forming a deposited film according to claim 18, wherein the raw material gas further comprises a compound which contains oxygen atoms.
Claim 23
Dependent Claim
20 words
A process for forming a deposited film according to claim 1, wherein said steps are performed in a single apparatus.
Claim 24
Dependent Claim
21 words
A process for forming a deposited film according to claim 1, wherein the first semiconductor layer has a first conductivity type.
Claim 25
Dependent Claim
25 words
A process for forming a deposited film according to claim 17, wherein said first semiconductor layer of first conductivity type is formed by plasma CVD.
Claim 26
Dependent Claim
20 words
A process for forming a deposited film according to claim 24, wherein said plasma CVD is high frequency plasma CVD.
Claim 27
Dependent Claim
44 words
A process for forming a deposited film according to claim 23, wherein the difference between the moving substrate temperatures for forming said first semiconductor layer having said first conductivity type and for forming said deposited film by glow discharge is 10° C. or more.
Claim 28
Dependent Claim
21 words
A process for forming a deposited film according to claim 1, wherein the first semiconductor layer is an i-type semiconductor layer.
Claim 29
Dependent Claim
23 words
A process for forming a deposited film according to claim 27, wherein the i-type semiconductor layer is formed by high frequency plasma CVD.
Claim 30
Dependent Claim
112 words
A process for continuously forming a deposited semiconductor film on an elongated moving substrate by plasma CVD in a vacuum chambers which comprises the steps of continuously moving said substrate in a lengthwise direction in said vacuum chamber, while heating said moving substrate immediately before the inlet of a glow discharge region of said vacuum chamber at a rate of 4° C./second or higher, forming said semiconductor film on said moving substrate in said glow discharge region at a deposition rate of 0.1 nm/second to 20 nm/second by plasma CVD, and cooling said moving substrate at a rate of 4° C./second or higher immediately after the outlet of said glow discharge region.
Claim 31
Dependent Claim
112 words
A process for continuously forming a deposited semiconductor film on an elongated moving substrate by plasma CVD in a vacuum chambers which comprises the steps of continuously moving said substrate in a lengthwise direction in said vacuum chamber, while heating said moving substrate immediately before the inlet of a glow discharge region of said vacuum chamber at a rate of 4° C./second or higher, forming said semiconductor film on said moving substrate in said glow discharge region at a deposition rate of 0.1 nm/second to 20 nm/second by plasma CVD, and cooling said moving substrate at a rate of 4° C./second or higher immediately after the outlet of said glow discharge region.
Claim 32
Independent Claim
84 words
An apparatus for continuously forming a deposited film on an elongated moving substrate, comprising a vacuum chamber for forming a semiconductor layer having p-type or n-type conductivity on said moving substrate and a vacuum chamber for forming a semiconductor having i-type conductivity on said semiconductor layer having p-type or n-type conductivity, which comprises heating means disposed immediately before said vacuum chamber for forming said semiconductor having i-type conductivity and cooling means disposed immediately after said vacuum chamber for forming said semiconductor having i-type conductivity.
Claim 33
Independent Claim
84 words
An apparatus for continuously forming a deposited film on an elongated moving substrate, comprising a vacuum chamber for forming a semiconductor layer having p-type or n-type conductivity on said moving substrate and a vacuum chamber for forming a semiconductor having i-type conductivity on said semiconductor layer having p-type or n-type conductivity, which comprises heating means disposed immediately before said vacuum chamber for forming said semiconductor having i-type conductivity and cooling means disposed immediately after said vacuum chamber for forming said semiconductor having i-type conductivity.
Claim 34
Dependent Claim
20 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the heating means comprises a halogen lamp.
Claim 35
Dependent Claim
20 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the heating means comprises a heating block.
Claim 36
Dependent Claim
24 words
An apparatus for continuously forming a deposited film according to claim 32, wherein the heating block can be brought into contact with the substrate.
Claim 37
Dependent Claim
20 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the heating means comprises a heating roller.
Claim 38
Dependent Claim
24 words
An apparatus for continuously forming a deposited film according to claim 34, wherein the heating roller can be brought into contact with the substrate.
Claim 39
Dependent Claim
25 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the heating means comprises an apparatus for generating a hot gas plasma.
Claim 40
Dependent Claim
27 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the heating means comprises an apparatus for generating an inductive heating by electromagnetic waves.
Claim 41
Dependent Claim
34 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the cooling means comprises a cooling pipe which is disposed adjacent to the substrate and through which a cooling medium passes.
Claim 42
Dependent Claim
20 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the cooling means comprises a cooling block.
Claim 43
Dependent Claim
24 words
An apparatus for continuously forming a deposited film according to claim 39, wherein the cooling block can be brought into contact with the substrate.
Claim 44
Dependent Claim
20 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the cooling means comprises a cooling roller.
Claim 45
Dependent Claim
24 words
An apparatus for continuously forming a deposited film according to claim 41, wherein the cooling roller can be brought into contact with the substrate.
Claim 46
Dependent Claim
27 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the cooling means comprises an apparatus for spraying a gas having a low temperature.
Claim 47
Dependent Claim
23 words
An apparatus for continuously forming a deposited film according to claim 30, wherein the cooling means comprises a mechanism for cooling by air.
Claim 48
Dependent Claim
58 words
A process for forming a deposited film comprising forming a semiconductor having i-type Conductivity on a moving semiconductor substrate having p-type or n-type conductivity by glow discharge, wherein said moving semiconductor substrate having p-type or n-type conductivity is heated at a rate of 4° C./second or higher before entering a region in which said glow discharge is performed.
Claim 49
Dependent Claim
58 words
A process for forming a deposited film comprising forming a semiconductor having i-type Conductivity on a moving semiconductor substrate having p-type or n-type conductivity by glow discharge, wherein said moving semiconductor substrate having p-type or n-type conductivity is heated at a rate of 4° C./second or higher before entering a region in which said glow discharge is performed.
Claim 50
Dependent Claim
74 words
A process for forming a deposited film which comprises the steps of: forming a first semiconductor layer having p-type or n- type conductivity on a substrate, and forming an i-type semiconductor layer on said first semiconductor layer by microwave CVD, wherein the substrate on which the semiconductor layer having p-type or n-type conductivity is deposited is heated at a rate of 4° C./second or more before the step of forming the i-type semiconductor layer.
Claim 51
Dependent Claim
74 words
A process for forming a deposited film which comprises the steps of: forming a first semiconductor layer having p-type or n- type conductivity on a substrate, and forming an i-type semiconductor layer on said first semiconductor layer by microwave CVD, wherein the substrate on which the semiconductor layer having p-type or n-type conductivity is deposited is heated at a rate of 4° C./second or more before the step of forming the i-type semiconductor layer.
Claim 52
Dependent Claim
55 words
A process for forming a deposited film according to claim 46, wherein an i-type semiconductor layer is formed on said first semiconductor layer by high frequency plasma CVD between the step of forming the semiconductor layer having p-type or n -type conductivity and the step of forming the i-type semiconductor layer by microwave plasma CVD.
Claim 53
Dependent Claim
79 words
A process for forming a deposited film Which comprises the steps of: forming an i-type semiconductor layer on a substrate by microwave CVD, and forming a second semiconductor layer on said i-type semiconductor layer having p-type or n-type conductivity, wherein the substrate on which the i-type semiconductor layer is deposited is cooled at a rate of 4° C./second or more after the step of forming the i-type semiconductor layer and before the step of forming the second semiconductor layer.
Claim 54
Dependent Claim
79 words
A process for forming a deposited film Which comprises the steps of: forming an i-type semiconductor layer on a substrate by microwave CVD, and forming a second semiconductor layer on said i-type semiconductor layer having p-type or n-type conductivity, wherein the substrate on which the i-type semiconductor layer is deposited is cooled at a rate of 4° C./second or more after the step of forming the i-type semiconductor layer and before the step of forming the second semiconductor layer.
Claim 55
Dependent Claim
46 words
A process for forming a deposited film according to claim 48, wherein an i-type semiconductor layer is formed by high frequency plasma CVD between the step of forming the i-type semiconductor layer by microwave CVD and the step of forming the p-type or n-type semiconductor layer.
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