Manufacture of thin film photodetector

Abstract

Abstract PURPOSE:To improve the spectral sensitivity characteristic of the short wave length range of a light by introducing gas for doping carbon to an I-type layer region forming chamber of a thin film amorphous photoreceptor, and gradually reducing a heating temperature toward an N-type layer region forming chamber side when heating to transfer a substrate. CONSTITUTION:A transfer mechanism 40 for transferring a tray T placing a substrate S on the upper surface of the heating electrode 27a of an I-type layer forming chamber 27 to drive by the rotation of a drive shaft 41, heater groups 42-46 are sequentially arranged toward the transferring direction of the substrate S on the lower surface, the temperatures are measured by thermocouples 47-51 to control the temperature. The center of the electrode 27a is regulated to high temperature from an N-type layer forming chamber 29, the substrate S is transferred at programmed prescribed transferring speed, mixture gas doped with carbon is fed to form a gradient in a forbidden band width, an I-type region 12 is formed, and transferred through an intermediate chamber 28 to an N-type layer forming chamber 29. Thus, C/Si of the layer 12 is gradually reduced from a P-type layer 11 toward an N-type layer region 13 side, thereby improving the sensitivity in the short wavelength region and to improve a photoelectric conversion efficiency.

Inventors

• 👤 Shungo Tsuboi
• 👤 俊吾 坪井

Bibliographic Details