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US5570317A
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Memory circuit with stress circuitry for detecting defects
Assignee: Intel Corp
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Filing: 1994-07-19
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Granted: 1996-10-29
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Expires: 2014-07-19
Abstract
Abstract A memory circuit is disclosed with stress circuitry for detecting data retention defects in the memory cells. The memory circuit comprises a memory cell array coupled to bit lines, an access circuit coupled to access the memory cells, and a discharge circuit coupled to stress the memory cells.
Inventors
- 👤 Eitan Rosen
- 👤 Yakov Milstain
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:55
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/50; G11C29/50016; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
101 words
A memory circuit comprising: a memory cell array comprising at least one memory cell coupled to a first bit line and a second bit line; an access circuit coupled to access the memory cell; a discharge circuit coupled to stress the memory cell by discharging the first bit line and the second bit line during an access of the memory cell by the access circuit, wherein the discharge circuit comprises a first pull-down transistor coupled between the first bit line and a predetermined low voltage, and a second pull-down transistor coupled between the second bit line and the predetermined low voltage.
Claim 2
Dependent Claim
101 words
A memory circuit comprising: a memory cell array comprising at least one memory cell coupled to a first bit line and a second bit line; an access circuit coupled to access the memory cell; a discharge circuit coupled to stress the memory cell by discharging the first bit line and the second bit line during an access of the memory cell by the access circuit, wherein the discharge circuit comprises a first pull-down transistor coupled between the first bit line and a predetermined low voltage, and a second pull-down transistor coupled between the second bit line and the predetermined low voltage.
Claim 3
Dependent Claim
24 words
The memory circuit of claim 1, wherein the access circuit accesses the memory cell by activating a word line coupled to the memory cell.
Claim 4
Dependent Claim
48 words
The memory circuit of claim 2, wherein the discharge circuit comprises a first discharge transistor coupled to the first bit line and a second discharge transistor coupled to the second bit line, the first and second discharge transistors activated by a stress control signal from the access circuit.
Claim 5
Dependent Claim
40 words
The memory circuit of claim 3, wherein the access circuit performs a stress cycle on the memory cell by activating the word line for the memory cell while activating the stress control signal for the first and second discharge transistors.
Claim 6
Dependent Claim
211 words
A memory circuit, comprising: a memory cell array comprising at least one memory cell coupled to a first bit line and a second bit line, wherein the memory cell comprises a pair of cross coupled inverters coupled to a first internal node and a second internal node, a first pass gate coupled between the first internal node and the first bit line, a second pass gate coupled between the second internal node and the second bit line; an access circuit coupled to access the memory cell, wherein the access circuit accesses the memory cell by activating a word line coupled to the memory cell; a discharge circuit coupled to stress the memory cell by discharging the first bit line and the second bit line during an access of the memory cell by the access circuit, wherein the discharge circuit comprises a first discharge transistor coupled to the first bit line and a second discharge transistor coupled to the second bit line, the first and second discharge transistors activated by a stress control signal from the access circuit, wherein the access circuit performs a stress cycle on the memory cell by activating the word line for the memory cell while activating the stress control signal for the first and second discharge transistors.
Claim 7
Dependent Claim
211 words
A memory circuit, comprising: a memory cell array comprising at least one memory cell coupled to a first bit line and a second bit line, wherein the memory cell comprises a pair of cross coupled inverters coupled to a first internal node and a second internal node, a first pass gate coupled between the first internal node and the first bit line, a second pass gate coupled between the second internal node and the second bit line; an access circuit coupled to access the memory cell, wherein the access circuit accesses the memory cell by activating a word line coupled to the memory cell; a discharge circuit coupled to stress the memory cell by discharging the first bit line and the second bit line during an access of the memory cell by the access circuit, wherein the discharge circuit comprises a first discharge transistor coupled to the first bit line and a second discharge transistor coupled to the second bit line, the first and second discharge transistors activated by a stress control signal from the access circuit, wherein the access circuit performs a stress cycle on the memory cell by activating the word line for the memory cell while activating the stress control signal for the first and second discharge transistors.
Claim 8
Dependent Claim
44 words
A memory cell comprising: a pair of cross coupled inverters coupled to a first internal node and a second internal node of the memory cell; circuitry for stressing the memory cell by concurrently discharging both the first internal node and the second internal node.
Claim 9
Dependent Claim
44 words
A memory cell comprising: a pair of cross coupled inverters coupled to a first internal node and a second internal node of the memory cell; circuitry for stressing the memory cell by concurrently discharging both the first internal node and the second internal node.
Claim 10
Dependent Claim
78 words
The memory cell of claim 6, wherein the circuitry for stressing the memory cell comprises: a first pass gate coupled between the first internal node and a first bit line; a second pass gate coupled between the second internal node and a second bit line; a first discharge transistor coupled between the first bit line and a predetermined low voltage level; and a second discharge transistor coupled between the second bit line and the predetermined low voltage level.
Claim 11
Dependent Claim
34 words
The memory cell of claim 7 wherein the circuitry for stressing the memory cell further comprises: an access circuit coupled to provide a stress control enable signal to the first and second discharge transistors.
Claim 12
Dependent Claim
22 words
The memory cell of claim 8 wherein the access circuit is coupled to provide a word line input to the memory cell.
Claim 13
Dependent Claim
40 words
The memory cell of claim 9, wherein the access circuit performs a stress cycle on the memory cell by activating the word line for the memory cell while activating the stress control signal for the first and second discharge transistors.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-29 | 2000-04-29 | 2000-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-29 | 2004-04-29 | 2004-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-29 | 2008-04-29 | 2008-10-29 | $7700.00 | Window Closed / Lapsed |