US5569487A
Expired / Lapsed
US
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Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon
Assignee: General Electric Co
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Filing: 1995-01-23
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Granted: 1996-10-29
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Expires: 2015-01-23
Abstract
Abstract Capacitors with high dielectric strength and low dissipation factor over a wide range of frequencies comprise two or more conductive layers separated by at least one dielectric layer. The dielectric layer is of silicon-doped amorphous hydrogenated carbon, with suitable dopants including silane (which is preferred), tetraalkoxysilanes and polyorganosiloxanes.
Inventors
- 👤 Michael W. DeVre
- 👤 Steven M. Gasworth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:48
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/14
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
49 words
A method for fabricating a capacitor which comprises providing a first conductive layer; depositing a dielectric layer on said conductive layer, said dielectric layer being of silicon-doped amorphous hydrogenated carbon having a silicon content of about 1-2 atomic percent; and depositing a second conductive layer on said dielectric layer.
Claim 2
Independent Claim
49 words
A method for fabricating a capacitor which comprises providing a first conductive layer; depositing a dielectric layer on said conductive layer, said dielectric layer being of silicon-doped amorphous hydrogenated carbon having a silicon content of about 1-2 atomic percent; and depositing a second conductive layer on said dielectric layer.
Claim 3
Dependent Claim
18 words
A method according to claim 1 wherein the conductive layers are of aluminum, zinc or an aluminum/zinc alloy.
Claim 4
Dependent Claim
32 words
A method according to claim 1 wherein the source of the amorphous hydrogenated carbon in the dielectric layer is a C 1-4 hydrocarbon, butadiene, acetylene, acetone, methyl ethyl ketone, toluene or ethylbenzene.
Claim 5
Dependent Claim
47 words
A method according to claim 1 wherein the first conductive layer is conditioned for adhesion of the dielectric layer prior to deposition of said dielectric layer by subjecting it to a flow of argon at a power density in the range of about 0.5-0.75 W/cm 2 .
Claim 6
Dependent Claim
24 words
A method according to claim 1 wherein a silane, a tetraalkoxysilane or a polyorganosiloxane is the source of the silicon in the dielectric layer.
Claim 7
Dependent Claim
15 words
A method according to claim 5 wherein the silicon source is silane (SiH 4 ).
Claim 8
Dependent Claim
31 words
A method according to claim 6 wherein the silane is introduced in combination with argon at a volume concentration of about 1-10%, based on the total of silicon reagent and argon.
Claim 9
Dependent Claim
18 words
A method according to claim 1 wherein the dielectric layer is deposited by plasma enhanced chemical vapor deposition.
Claim 10
Dependent Claim
15 words
A method according to claim 1 wherein the dielectric layer is deposited by cascaded arc.
Claim 11
Dependent Claim
14 words
A method according to claim 1 wherein the dielectric layer is deposited by sputtering.
Claim 12
Dependent Claim
16 words
A method according to claim 1 wherein the dielectric layer is deposited by ion beam deposition.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-29 | 2000-04-29 | 2000-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-29 | 2004-04-29 | 2004-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-29 | 2008-04-29 | 2008-10-29 | $7700.00 | Window Closed / Lapsed |