Patent US5567244A successfully refreshed from Google Patents.
US5567244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for cleaning semiconductor devices
Assignee: SK Hynix Inc
•
Filing: 1993-12-23
•
Granted: 1996-10-22
•
Expires: 2013-12-23
Abstract
Abstract The present invention provides a process for cleaning semiconductor devices which enables the contamination of copper to maintained under a level of about 10 9 atoms/cm 2 to meet the qualification of DRAMs of equal to or greater than 64M bits in capacity by means of supplying O 3 to a solution, resulting in great reproducibility and reliability. According to the present invention, a mechanism for removing a copper impurity in a semiconductor device uses oxygen to form a cupric oxide, which forms a cupric fluoride, which is then removed from the solution.
Inventors
- 👤 Chang-Jae Lee
- 👤 Hyeung-Tae Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:53
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/10; H10P70/15; C; C01; C01G; C01G3/00; C01G3/04; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
53 words
A process for cleaning semiconductor devices contaminated by Cu, comprising the steps of: immersing a semiconductor device in an HF solution; supplying O 3 bubbles into the HF solution, wherein Cu is removed from the semiconductor device and converted to cupric fluoride precipitates; and flushing the cupric fluoride precipitates from the HF solution.
Claim 2
Dependent Claim
53 words
A process for cleaning semiconductor devices contaminated by Cu, comprising the steps of: immersing a semiconductor device in an HF solution; supplying O 3 bubbles into the HF solution, wherein Cu is removed from the semiconductor device and converted to cupric fluoride precipitates; and flushing the cupric fluoride precipitates from the HF solution.
Claim 3
Dependent Claim
15 words
The process of claim 1, wherein the HF solution is diluted with H 2 O.
Claim 4
Dependent Claim
15 words
The process of claim 1, wherein the HF solution is contained in a quartz container.
Claim 5
Dependent Claim
22 words
The process of claim 1, wherein the O 3 bubbles are supplied through a tube which has a plurality of perforated nozzles.
Claim 6
Dependent Claim
13 words
The process of claim 4, wherein the perforated nozzles produce O 3 bubbles.
Claim 7
Dependent Claim
77 words
A process for removing copper ions in semiconductor devices, comprising the steps of: producing oxygen atoms ([O]) by bubbling O 3 gas into an HF solution; forming CuO by combining the oxygen ([O]) and a cupric ion (Cu 2+ ); forming cupric fluoride precipitates (CuF 2 ) by combining oxygen in the CuO and fluorine (F) in the HF solution through ion-exchange; and flushing the cupric fluoride precipitates from the HF solution by means of de-ionized water.
Claim 8
Dependent Claim
77 words
A process for removing copper ions in semiconductor devices, comprising the steps of: producing oxygen atoms ([O]) by bubbling O 3 gas into an HF solution; forming CuO by combining the oxygen ([O]) and a cupric ion (Cu 2+ ); forming cupric fluoride precipitates (CuF 2 ) by combining oxygen in the CuO and fluorine (F) in the HF solution through ion-exchange; and flushing the cupric fluoride precipitates from the HF solution by means of de-ionized water.
Claim 9
Dependent Claim
52 words
A process for cleaning semiconductors contaminated by Cu, comprising supplying oxygen atoms by bubbling O 3 gas into an HF-containing solution containing the semiconductors, wherein Cu is removed from the semiconductors by combining oxygen and Cu atoms to form CuO, forming Cu-containing precipitates, and flushing the Cu-containing precipitates from the HF-containing solution.
Claim 10
Dependent Claim
52 words
A process for cleaning semiconductors contaminated by Cu, comprising supplying oxygen atoms by bubbling O 3 gas into an HF-containing solution containing the semiconductors, wherein Cu is removed from the semiconductors by combining oxygen and Cu atoms to form CuO, forming Cu-containing precipitates, and flushing the Cu-containing precipitates from the HF-containing solution.
Claim 11
Dependent Claim
19 words
The process of claim 7, wherein the oxygen is supplied by injecting O 3 bubbles into the HF-containing solution.
Claim 12
Dependent Claim
17 words
The process of claim 7, wherein the Cu-containing precipitates comprise cupric fluoride produced in the HF-containing solution.
Claim 13
Dependent Claim
17 words
The process of claim 8, wherein the Cu-containing precipitates comprise cupric fluoride produced in the HF-containing solution.
Claim 14
Dependent Claim
18 words
The process of claim 9, wherein the flushing step comprises flushing the cupric fluoride from the HF-containing solution.
Claim 15
Dependent Claim
18 words
The process of claim 10, wherein the flushing step comprises flushing the cupric fluoride from the HF-containing solution.
Claim 16
Dependent Claim
27 words
The process of claim 9, wherein the concentration of Cu atoms on the surface of the semiconductors is maintained about or below 10 9 atoms/cm 2 .
Claim 17
Dependent Claim
27 words
The process of claim 10, wherein the concentration of Cu atoms on the surface of the semiconductors is maintained about or below 10 9 atoms/cm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-22 | 2000-04-22 | 2000-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-22 | 2004-04-22 | 2004-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-22 | 2008-04-22 | 2008-10-22 | $7700.00 | Window Closed / Lapsed |