US5565379A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device having a bump electrode by a proximity exposure method
Assignee: Renesas Electronics Corp
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Filing: 1995-02-10
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Granted: 1996-10-15
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Expires: 2015-02-10
Abstract
Abstract In a process for manufacturing a semiconductor device having a bump electrode, a pad electrode for external connection is formed on a semiconductor substrate, and then a insulating layer having a opening exposing a predetermined portion at an upper surface of the pad electrode is formed. A resist having a thickness in the range of 10 μm to 100 μm is formed on the insulating layer, and then the resist is selectively exposed to a light from which light components having wavelength of 340 nm or less are excluded. After the resist is developed and the resist positioned on the opening provided in the insulating layer are selectively removed, a bump electrode which is electrically connected to the pad electrode is formed using residual resist as a mask. By way of the manufacturing method, since light having the wavelength in the vicinity of 300 nm to which the resist is significantly sensitive does not reach the resist, a phenomenon of a rapid polymerization reaction on the upper portion of the resist of the exposed region can be prevented. As a result, verticality of the side face of the bump electrode with respect to the main surface of the semiconductor substrate is enhanced.
Inventors
- 👤 Shinji Baba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:56
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/251; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
145 words
A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming a pad electrode for external connection on a semiconductor substrate; forming an insulating layer having an opening exposing a portion at an upper surface of said pad electrode on said semiconductor substrate; forming a resist having a thickness of about 10 to about 100 μm over said insulating layer; selectively exposing said resist by a proximity method to a light from which light components having a wavelength of 340 nm or less are removed, wherein the resist has a resolution equal to or less than the thickness of the resist during selective exposure; developing said resist and selectively removing said resist positioned on said opening and leaving residual resist; and forming a bump electrode which is electrically connected to said pad electrode using said residual resist as a mask.
Claim 2
Independent Claim
145 words
A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming a pad electrode for external connection on a semiconductor substrate; forming an insulating layer having an opening exposing a portion at an upper surface of said pad electrode on said semiconductor substrate; forming a resist having a thickness of about 10 to about 100 μm over said insulating layer; selectively exposing said resist by a proximity method to a light from which light components having a wavelength of 340 nm or less are removed, wherein the resist has a resolution equal to or less than the thickness of the resist during selective exposure; developing said resist and selectively removing said resist positioned on said opening and leaving residual resist; and forming a bump electrode which is electrically connected to said pad electrode using said residual resist as a mask.
Claim 3
Dependent Claim
70 words
The method of manufacturing the semiconductor device having the bump electrode in accordance with claim 1, wherein the step of forming said resist on said insulating layer includes the step of forming a photoresist having a thickness of 20-40 μm; and the step of selectively exposing said resist is carried out by disposing a photomask spaced apart from the surface of said resist with a gap of 10-100 μm therebetween.
Claim 4
Dependent Claim
65 words
The method of manufacturing the semiconductor device having the bump electrode in accordance with claim 1, wherein said step of selectively exposing said resist is carried out with a mirror and a lens optically interposed between a light source and photomask and with a filter which does not transmit light having a wavelength of 340 nm or less interposed between said mirror and said lens.
Claim 5
Dependent Claim
64 words
The method of manufacturing the semiconductor device having the bump electrode in accordance with claim 1, wherein said step of selectively exposing said resist is carried out with a lens optically interposed between a light source and said photomask and a filter which does not transmit light components having a wavelength of 340 nm or less optically interposed between said photomask and said lens.
Claim 6
Dependent Claim
57 words
The method of manufacturing the semiconductor device having the bump electrode in accordance with claim 1, wherein said step of selectively exposing said resist is carried out with a lens formed of a material which has substantially no transmittance to light having a wavelength of 340 nm or less interposed between a light source and a photomask.
Claim 7
Dependent Claim
27 words
The method of manufacturing the semiconductor device having the bump electrode in accordance with claim 5, wherein a lens of soda glass is used as said lens.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-15 | 2000-04-15 | 2000-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-15 | 2004-04-15 | 2004-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-15 | 2008-04-15 | 2008-10-15 | $7700.00 | Window Closed / Lapsed |