Abstract A non-volatile split-gate memory cell 8 which can be programmed with only a five volt power supply and is fabricated using standard transistor processing methods, comprises a semiconductor substrate 10 with a source 12 and a drain 14 region separated by a channel region 16. A conductive floating gate 18 is formed over a portion 16a of the channel region 16 and separated by a FAMOS oxide 20. A conductive control gate 22 is formed over but electrically insulated from the floating gate 18 and over a second portion 16b of the channel region 16. The control gate 22 is separated from the second portion of the channel 16b by a pass oxide 26 which is thicker than the FAMOS oxide 20. Other embodiments and processes are also disclosed.
A method for programming a non-volatile split-gate cell formed on a semiconductor substrate which comprises at least two highly doped regions separated by a channel region, and only one control gate formed over said channel region, and over a floating gate formed beneath said control gate and over a portion of said channel region, comprising: applying a selected voltage to one of said two highly doped regions; applying as little as about five volts more than said selected voltage to the second of said two highly doped regions; and applying a voltage less than said selected voltage to said substrate.
Claim 2
Independent Claim
100 words
A method for programming a non-volatile split-gate cell formed on a semiconductor substrate which comprises at least two highly doped regions separated by a channel region, and only one control gate formed over said channel region, and over a floating gate formed beneath said control gate and over a portion of said channel region, comprising: applying a selected voltage to one of said two highly doped regions; applying as little as about five volts more than said selected voltage to the second of said two highly doped regions; and applying a voltage less than said selected voltage to said substrate.
Claim 3
Dependent Claim
21 words
The method of claim 1 and further comprising applying about twelve volts more than said selected voltage to said control gate.
Claim 4
Dependent Claim
42 words
The method of claim 1 wherein said method comprises: applying zero volts to said first highly doped region; applying five volts to said second highly doped region; applying twelve volts to said control gate; and applying negative three volts to said substrate.