US5262987A
Expired / Lapsed
US
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Floating gate semiconductor nonvolatile memory having impurity doped regions for low voltage operation
Assignee: Seiko Instruments Inc
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Filing: 1992-07-20
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Granted: 1993-11-16
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Expires: 2012-07-20
Abstract
Abstract A semiconductor nonvolatile memory has a base semiconductor region of one conductivity type. A first semiconductor region of the one conductivity type is formed in a surface portion of the base semiconductor region and has an impurity density higher than that of the base semiconductor region. A source region and a drain region of opposite conductivity than the first semiconductor region are formed in a surface portion of the first semiconductor region in spaced relation from each other. A second semiconductor region of the one conductivity type is formed in a surface portion of the first semiconductor region and contains an impurity of the opposite conductivity type. A floating gate electrode is formed over and electrically insulated from the second semiconductor region, and a control gate electrode is formed over and electrically insulated from the floating gate electrode. The control gate may include a section which is formed over a portion of a channel region between the source and drain regions, and a third semiconductor region may be formed below this section of the control gate. The semiconductor nonvolatile memory has a lowered threshold voltage and is operative at low drive voltages and at high speed while maintaining high programming performance and memory cell separation or isolation.
Inventors
- 👤 Yoshikazu Kojima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:16
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
159 words
A semiconductor nonvolatile memory comprising: a base semiconductor region of one conductivity type; a first semiconductor region of said one conductivity type formed in a surface portion of the base semiconductor region and having an impurity density higher than that of the base semiconductor region; a source region and a drain region of opposite conductivity than that of the first semiconductor region and formed in a surface portion of the first semiconductor region in spaced relation from each other; a second semiconductor region of said one conductivity type containing both an impurity of said opposite conductivity type and an impurity of said one conductivity type, the second semiconductor region being formed in a surface portion of the first semiconductor region and extending from the source region to the drain region; a floating gate electrode formed over and electrically insulated from the second semiconductor region; and a control gate electrode formed over and electrically insulated from the floating gate electrode.
Claim 2
Dependent Claim
159 words
A semiconductor nonvolatile memory comprising: a base semiconductor region of one conductivity type; a first semiconductor region of said one conductivity type formed in a surface portion of the base semiconductor region and having an impurity density higher than that of the base semiconductor region; a source region and a drain region of opposite conductivity than that of the first semiconductor region and formed in a surface portion of the first semiconductor region in spaced relation from each other; a second semiconductor region of said one conductivity type containing both an impurity of said opposite conductivity type and an impurity of said one conductivity type, the second semiconductor region being formed in a surface portion of the first semiconductor region and extending from the source region to the drain region; a floating gate electrode formed over and electrically insulated from the second semiconductor region; and a control gate electrode formed over and electrically insulated from the floating gate electrode.
Claim 3
Dependent Claim
36 words
A semiconductor nonvolatile memory according to claim 1, wherein the control gate electrode includes a section capacitively coupled to the floating gate electrode to indirectly control a channel region defined between the source and drain regions.
Claim 4
Dependent Claim
37 words
A semiconductor nonvolatile memory according to claim 2, wherein the control gate electrode includes another section formed over and electrically insulated from a part of the channel region to directly control said part of the channel region.
Claim 5
Dependent Claim
48 words
A semiconductor nonvolatile memory according to claim 3, further including a third semiconductor region of said one conductivity type containing an extra impurity of said one conductivity type and formed in a surface portion of the first semiconductor region under said another section int he second semiconductor region.
Claim 6
Dependent Claim
218 words
A semiconductor nonvolatile memory comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of said first conductivity type formed in a surface portion of the semiconductor substrate and having an impurity density higher than that of the semiconductor substrate; a source region and a drain region of a second conductivity type formed in spaced relation in a surface portion of the first semiconductor region to define therebetween a channel region; a second semiconductor region of said first conductivity type containing both an impurity of said second conductivity type and an impurity of said first conductivity type, the second semiconductor region being formed in a surface portion of the first semiconductor region and extending from the source region to the drain region; a floating gate electrode formed over and electrically insulated from the second semiconductor region; and a control gate electrode formed over and electrically insulated from the floating gate electrode, wherein the control gate electrode has a prolonged portion disposed over and electrically insulated from a part of the second semiconductor region to define a first channel region in the second semiconductor region under the prolonged portion and a second channel region under the floating gate electrode, a threshold voltage of the first channel region being higher than that of the second channel region.
Claim 7
Dependent Claim
218 words
A semiconductor nonvolatile memory comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of said first conductivity type formed in a surface portion of the semiconductor substrate and having an impurity density higher than that of the semiconductor substrate; a source region and a drain region of a second conductivity type formed in spaced relation in a surface portion of the first semiconductor region to define therebetween a channel region; a second semiconductor region of said first conductivity type containing both an impurity of said second conductivity type and an impurity of said first conductivity type, the second semiconductor region being formed in a surface portion of the first semiconductor region and extending from the source region to the drain region; a floating gate electrode formed over and electrically insulated from the second semiconductor region; and a control gate electrode formed over and electrically insulated from the floating gate electrode, wherein the control gate electrode has a prolonged portion disposed over and electrically insulated from a part of the second semiconductor region to define a first channel region in the second semiconductor region under the prolonged portion and a second channel region under the floating gate electrode, a threshold voltage of the first channel region being higher than that of the second channel region.
Claim 8
Dependent Claim
19 words
A semiconductor nonvolatile memory according to claim 5, wherein the first channel region is adjacent to the source region.
Claim 9
Dependent Claim
19 words
A semiconductor nonvolatile memory according to claim 5, wherein the first channel region is adjacent to the drain region.
Claim 10
Dependent Claim
57 words
A semiconductor nonvolatile memory according to claim 5, further including a third semiconductor region formed in a surface portion of the first semiconductor region under the prolonged portion of the control gate and containing an impurity of said first conductivity type, the third semiconductor region having a higher impurity density than that of the second semiconductor region.
Claim 11
Dependent Claim
222 words
A semiconductor nonvolatile memory comprising: a base semiconductor region of one conductivity type; a first semiconductor region of said one conductivity type formed in a surface portion of the base semiconductor region and having an impurity density higher than that of the base semiconductor region; a source region and a drain region of opposite conductivity than that of the first semiconductor region and formed in a surface portion of the first semiconductor region in spaced relation from each other; a second semiconductor region formed in a surface portion of the first semiconductor region between the source and drain regions and containing an impurity of said opposite conductivity type; a floating gate electrode formed over and electrically insulated from the second semiconductor region; a control gate electrode formed over and electrically insulated from the floating gate electrode, the control gate electrode having a section capacitively coupled to the floating gate electrode to indirectly control a channel region defined between the source and drain regions, and another section formed over and electrically insulated from a part of the channel region to directly control said part of the channel region; and a third semiconductor region formed under said another section and containing an impurity of said one conductivity type, the third semiconductor region having a higher impurity density than that of the second semiconductor region.
Claim 12
Dependent Claim
222 words
A semiconductor nonvolatile memory comprising: a base semiconductor region of one conductivity type; a first semiconductor region of said one conductivity type formed in a surface portion of the base semiconductor region and having an impurity density higher than that of the base semiconductor region; a source region and a drain region of opposite conductivity than that of the first semiconductor region and formed in a surface portion of the first semiconductor region in spaced relation from each other; a second semiconductor region formed in a surface portion of the first semiconductor region between the source and drain regions and containing an impurity of said opposite conductivity type; a floating gate electrode formed over and electrically insulated from the second semiconductor region; a control gate electrode formed over and electrically insulated from the floating gate electrode, the control gate electrode having a section capacitively coupled to the floating gate electrode to indirectly control a channel region defined between the source and drain regions, and another section formed over and electrically insulated from a part of the channel region to directly control said part of the channel region; and a third semiconductor region formed under said another section and containing an impurity of said one conductivity type, the third semiconductor region having a higher impurity density than that of the second semiconductor region.
References Cited (Backward Citations)
JPS55106079A
Cited
US4267558A
Cited
US4403307A
Cited
US4622656A
Cited
JPS60182777A
Cited
JPS63169070A
Cited
GB2200795A
Cited
US4949140A
Cited
US5014097A
Cited
US4958321A
Cited
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