Electrically erasable memory with self-limiting erase

Claim 2

An electrically erasable insulated gate field effect transistor memory device comprising source and drain regions defined in a face of a body of semiconductor material, a floating gate on said face between the source and drain regions insulated from the semiconductor material by a gate insulator, a control gate overlying the floating gate insulated therefrom by an interlevel insulator, conductive means overlying said face and insulated therefrom by an insulating layer with a portion of the conductive means overlying a segment of the floating gate, an insulating coating on said segment separating the portion of the conductive means from said segment but permitting the floating gate to discharge electrons into the conductive means upon application of high voltage thereto and means to prevent the conductive means from discharging the floating gate in excess of a selected level.

Claim 3

A device according to claim 1 wherein said portion of the conductive means is separated from the remainder thereof by impedance means.

Claim 4

A device according to claim 2 wherein said portion of the conductive means is coupled to said source of said transistor by a control device which is rendered conductive when the voltage on said floating gate is less than a predetermined level.

Claim 5

A device according to claim 3 wherein said control device is a sensor transistor having a control gate and a floating gate.

Claim 6

A device according to claim 4 wherein the control gate and floating gate of the sensor transistor are integral with the control gate and floating gate, respectively, of the memory device.

Claim 7

A device according to claim 5 wherein the sensor transistor has a source connected to the source of the memory device and has a drain coupled to one end of said impedance means and to said portion of the conductive means.

Claim 8

A device according to claim 2 wherein the impedance means is an implanted resistor formed in a polycrystalline silicon layer.

Claim 9

A device according to claim 7 wherein the floating gate is a first level of polycrystalline silicon and said portion of the conductive means is a second level of polycrystalline silicon.

Claim 10

A semiconductor device comprising first and second regions defined in a face of a body of semiconductor material, a first control element on said face between the first and second regions insulated from the semiconductor material by a first insulator, a second control element overlying the first control element insulated therefrom by an interlevel insulator, conductive means overlying said face and insulated therefrom by an insulating layer with a portion of the conductive means overlying an extended segment of the first control element, the extended segment laterally spaced from the second control element on said face, an insulating coating on said segment separating the portion of the conductive means from said segment but permitting electron flow into the conductive means from the first control element through the insulating coating at said segment upon application of high voltage across the insulating coating and means to prevent the first control element from being discharged in excess of a selected level.

Claim 11

A semiconductor device comprising first and second regions defined in a face of a body of semiconductor material, a first control element on said face between the first and second regions insulated from the semiconductor material by a first insulator, a second control element overlying the first control element insulated therefrom by an interlevel insulator, conductive means overlying said face and insulated therefrom by an insulating layer with a portion of the conductive means overlying an extended segment of the first control element, the extended segment laterally spaced from the second control element on said face, an insulating coating on said segment separating the portion of the conductive means from said segment but permitting electron flow into the conductive means from the first control element through the insulating coating at said segment upon application of high voltage across the insulating coating and means to prevent the first control element from being discharged in excess of a selected level.

Claim 12

A device according to claim 9 wherein said first and second regions are source and drain of a field effect transistor and the first and second control elements are gates.

Claim 13

An electrically erasable insulated gate field effect transistor memory device comprising first source and drain regions defined in a face of a body of semiconductor material, second source and drain regions defined in said face, a floating gate on said face above a first channel between the first source and drain regions and above a second channel between the second source and drain regions insulated from the semiconductor material by a gate insulator, a control gate overlying the floating gate insulated therefrom by an interlevel insulator, conductive means overlying said face and insulated therefrom by an insulating layer with a portion of the conductive means overlying a segment of the floating gate laterally spaced from the first and second channels, an insulating coating on said segment separating the portion of the conductive means from said segment but permitting the floating gate to discharge electrons into the conductive means upon application of high voltage thereto and means connecting the conductive means to the second drain region to prevent discharging the floating gate in excess of a selected level.

Claim 14

An electrically erasable insulated gate field effect transistor memory device comprising first source and drain regions defined in a face of a body of semiconductor material, second source and drain regions defined in said face, a floating gate on said face above a first channel between the first source and drain regions and above a second channel between the second source and drain regions insulated from the semiconductor material by a gate insulator, a control gate overlying the floating gate insulated therefrom by an interlevel insulator, conductive means overlying said face and insulated therefrom by an insulating layer with a portion of the conductive means overlying a segment of the floating gate laterally spaced from the first and second channels, an insulating coating on said segment separating the portion of the conductive means from said segment but permitting the floating gate to discharge electrons into the conductive means upon application of high voltage thereto and means connecting the conductive means to the second drain region to prevent discharging the floating gate in excess of a selected level.

Claim 15

A device according to claim 11 wherein said portion of the conductive means is separated from the remainder thereof by impedance means.

Claim 16

A device according to claim 11 wherein said portion of the conductive means is coupled to ground via said second source and drain regions which is a path rendered conductive when the voltage on said floating gate is less than a predetermined level.

Claim 17

A device according to claim 13 wherein said second source and drain regions provide a sensor transistor having a control gate and a floating gate.

Claim 18

A device according to claim 14 wherein the control gate and floating gate of the sensor transistor are integral with the control gate and floating gate, respectively, of the memory device.

Claim 19

A device according to claim 15 wherein the sensor transistor has a source connected to the source of the memory device and has a drain coupled to one end of said impedance means and to said portion of the conductive means.

Claim 20

A device according to claim 12 wherein the impedance means is an implanted resistor formed in a polycrystalline silicon layer.

Claim 21

A device according to claim 17 wherein the floating gate is a first level of polycrystalline silicon and said portion of the conductive means is a second level of polycrystalline silicon.