Field edge manufacture of a T-gate LDD pocket device

Claim 1

The method of manufacturing a T-gate LDD pocket device integrated circuit comprising: providing field oxide regions in and on the surface of a semiconductor substrate wherein said T-gate device will be formed between said field oxide regions; providing a gate oxide layer on the surface of said semiconductor substrate between said field oxide regions; depositing a layer of polysilicon over the surface of said gate oxide layer; etching away portions of said polysilicon layer leaving said polysilicon layer only between and over the inner edges of said field oxide regions; covering said remaining polysilicon layer with a photoresist mask wherein the inner edges of said field oxide regions underlying said polysilicon layer are protected by said photoresist mask; etching away said field oxide regions not covered by said photoresist mask to form said T-gate device; implanting first ions having a first conductivity type at a tilt angle to form lightly doped regions at the surface of said semiconductor substrate from which said field oxide regions have been removed and underlying the inner edges of said remaining field oxide regions; implanting second ions of said first conductivity type to form first heavily doped regions at the surface of said semiconductor substrate from which said field oxide regions have been removed; forming spacers on the sidewalls of said T-gate device wherein said spacers protect said lightly doped regions from degradation; and implanting third ions of a second conductivity type wherein said second conductivity type is opposite to said first conductivity type to form pocket heavily doped regions underlying said first heavily doped regions to complete the fabrication of said T-gate LDD pocket device in the manufacture of said integrated circuit.

Claim 2

The method of manufacturing a T-gate LDD pocket device integrated circuit comprising: providing field oxide regions in and on the surface of a semiconductor substrate wherein said T-gate device will be formed between said field oxide regions; providing a gate oxide layer on the surface of said semiconductor substrate between said field oxide regions; depositing a layer of polysilicon over the surface of said gate oxide layer; etching away portions of said polysilicon layer leaving said polysilicon layer only between and over the inner edges of said field oxide regions; covering said remaining polysilicon layer with a photoresist mask wherein the inner edges of said field oxide regions underlying said polysilicon layer are protected by said photoresist mask; etching away said field oxide regions not covered by said photoresist mask to form said T-gate device; implanting first ions having a first conductivity type at a tilt angle to form lightly doped regions at the surface of said semiconductor substrate from which said field oxide regions have been removed and underlying the inner edges of said remaining field oxide regions; implanting second ions of said first conductivity type to form first heavily doped regions at the surface of said semiconductor substrate from which said field oxide regions have been removed; forming spacers on the sidewalls of said T-gate device wherein said spacers protect said lightly doped regions from degradation; and implanting third ions of a second conductivity type wherein said second conductivity type is opposite to said first conductivity type to form pocket heavily doped regions underlying said first heavily doped regions to complete the fabrication of said T-gate LDD pocket device in the manufacture of said integrated circuit.

Claim 9

The method of manufacturing a T-gate LDD pocket device integrated circuit comprising: providing field oxide regions in and on the surface of a semiconductor substrate wherein said T-gate device will be formed between said field oxide regions; providing a gate oxide layer on the surface of said semiconductor substrate between said field oxide regions; depositing a layer of polysilicon over the surface of said gate oxide layer; etching away portions of said polysilicon layer leaving said polysilicon layer only between and over the inner edges of said field oxide regions; covering said remaining polysilicon layer with a photoresist mask wherein the inner edges of said field oxide regions underlying said polysilicon layer are protected by said photoresist mask; etching away said field oxide regions not covered by said photoresist mask to form said T-gate device; implanting first ions having a first conductivity type at a tilt angle to form lightly doped regions at the surface of said semiconductor substrate from which said field oxide regions have been removed and underlying the inner edges of said remaining field oxide regions; implanting second ions of said first conductivity type at no tilt angle to form first heavily doped regions at the surface of said semiconductor substrate from which said field oxide regions have been removed; forming spacers on the sidewalls of said T-gate device; and implanting third ions of a second conductivity type at a tilt angle wherein said second conductivity type is opposite to said first conductivity type to form pocket heavily doped regions underlying said first heavily doped regions to complete the fabrication of said T-gate LDD pocket device in the manufacture of said integrated circuit.

Claim 10

The method of manufacturing a T-gate LDD pocket device integrated circuit comprising: providing field oxide regions in and on the surface of a semiconductor substrate wherein said T-gate device will be formed between said field oxide regions; providing a gate oxide layer on the surface of said semiconductor substrate between said field oxide regions; depositing a layer of polysilicon over the surface of said gate oxide layer; etching away portions of said polysilicon layer leaving said polysilicon layer only between and over the inner edges of said field oxide regions; covering said remaining polysilicon layer with a photoresist mask wherein the inner edges of said field oxide regions underlying said polysilicon layer are protected by said photoresist mask; etching away said field oxide regions not covered by said photoresist mask to form said T-gate device; implanting first ions having a first conductivity type at a tilt angle to form lightly doped regions at the surface of said semiconductor substrate from which said field oxide regions have been removed and underlying the inner edges of said remaining field oxide regions; implanting second ions of said first conductivity type at no tilt angle to form first heavily doped regions at the surface of said semiconductor substrate from which said field oxide regions have been removed; forming spacers on the sidewalls of said T-gate device; and implanting third ions of a second conductivity type at a tilt angle wherein said second conductivity type is opposite to said first conductivity type to form pocket heavily doped regions underlying said first heavily doped regions to complete the fabrication of said T-gate LDD pocket device in the manufacture of said integrated circuit.