Patent US5553769A successfully refreshed from Google Patents.
US5553769A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Interconnection of a carrier substrate and a semiconductor device
Assignee: International Business Machines Corp
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Filing: 1995-05-19
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Granted: 1996-09-10
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Expires: 2015-05-19
Abstract
Abstract Solder interconnection for forming connections between an integrated semiconductor device and a carrier substrate is provided. Located on the carrier substrate are electrodes and located between the electrodes and integrated semiconductor device are solder connections that have a relatively low melting point such that when the device is in operation, the solder connection will liquify thereby permitting expansion compensation between the substrate and semiconductor device.
Inventors
- 👤 James V. Ellerson
- 👤 Joseph Funari
- 👤 Jack A. Varcoe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:18
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3431; H05K3/3436; H10; H10W; H10W72/00; H10W74/00; H10W74/01; H10W74/012; H10W74/10; H10W74/15; H10W95/00; H05K2201/00; H05K2201/10; H05K2201/10613; H05K2201/10954; H05K2201/10977; H05K2201/10992; H05K3/303; H05K3/305; H05K3/3452; H05K3/346; H10W72/01; H10W72/012; H10W72/01221; H10W72/01223; H10W72/013; H10W72/01331; H10W72/01336; H10W72/071; H10W72/072; H10W72/07202; H10W72/07231; H10W72/07236; H10W72/073; H10W72/07331; H10W72/20; H10W72/251; H10W72/252; H10W72/30; H10W72/331; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/851; H10W72/853; H10W72/856; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734; Y; Y02; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
108 words
A method of increasing the fatigue life of solder interconnections between a semiconductor device and a supporting substrate comprising providing on a supporting substrate a plurality of electrodes; providing on the surface of said electrodes that is remote from said supporting substrate a low melting solder material having a melting point which will liquify to which the interconnections are subjected during use; positioning a semiconductor so that said device solder connections are located between said semiconductor device and electrodes; applying heat to thereby cause the solder connections to liquify; then removing said heat to thereby cause the solder material to solidify and interconnect said semiconductor device supporting substrate.
Claim 2
Independent Claim
108 words
A method of increasing the fatigue life of solder interconnections between a semiconductor device and a supporting substrate comprising providing on a supporting substrate a plurality of electrodes; providing on the surface of said electrodes that is remote from said supporting substrate a low melting solder material having a melting point which will liquify to which the interconnections are subjected during use; positioning a semiconductor so that said device solder connections are located between said semiconductor device and electrodes; applying heat to thereby cause the solder connections to liquify; then removing said heat to thereby cause the solder material to solidify and interconnect said semiconductor device supporting substrate.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said solder material has a melting point from about 110° to about 120° F.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said solder material has a melting point from about 115° to about 120° F.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said solder material has a melting point of about 117° F.
Claim 6
Dependent Claim
42 words
The method of claim 1 wherein said solder material connections contain about 44.5 to about 44.7% bismuth, about 22.5 to about 22.7% lead, about 8.0 to about 8.5% tin, about 5.0 to about 5.3% cadmium, and about 17.5 to about 18.1% indium.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein the thickness of said solder material is about 2 to about 4 mils.
Claim 8
Dependent Claim
10 words
The method of claim 1 wherein said electrodes are copper.
Claim 9
Dependent Claim
21 words
The method of claim 1 which further includes providing solder bumps located between said semiconductor device and low melting solder connections.
Claim 10
Dependent Claim
20 words
The method of claim 8 wherein said solder bumps have melting point above that of said low melting solder connections.
Claim 11
Dependent Claim
13 words
The method of claim 9 wherein said solder bumps are Pb/Sn solder bumps.
Claim 12
Dependent Claim
22 words
The method of claim 1 wherein the heat applied raises the temperature of the structure to about 110° to about 120° F.
Claim 13
Dependent Claim
20 words
The method of claim 1 which further includes providing an adhesive material between said semiconductor device and said supporting substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-10 | 2000-03-11 | 2000-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-10 | 2004-03-11 | 2004-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-10 | 2008-03-11 | 2008-09-10 | $7700.00 | Window Closed / Lapsed |