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US5553022A
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Integrated circuit identification apparatus and method
Assignee: NXP USA Inc
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Filing: 1994-12-27
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Granted: 1996-09-03
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Expires: 2014-12-27
Abstract
Abstract An integrated circuit identification device (10) includes a plurality of inverters (12-16), a first bus (24), an address bus (26), a plurality of drivers (18-22), a pre-charge circuit (28) and an identification code access (30). Each inverter (12) includes a P-channel FET (32-36) and an N-channel FET (38). An identification code is written to the device (10) by selectively breaking down the gate-well dielectric layer (112) of the N-channel FET which permanently alters the FET. When the address bus provides a read signal to the gate drivers, each N-channel FET that has been altered will be unable to turn on, thus the precharging of the P-channel FET keeps the output of the inverter at a logic "1". N-channel FETs that have not be altered will be on when the read signal is provided, thus providing a logic "0".
Inventors
- 👤 Kenneth C. Weng
- 👤 Chia S. Weng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 21:45
CPC Classifications
G; G06; G06F; G06F21/00; G06F21/70; G06F21/71; G06F21/73; G06F21/88; G06F2207/00; G06F2207/72; G06F2207/7219
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
216 words
An integrated circuit identification apparatus comprising: (a) a plurality of inverters, each inverter of the plurality of inverters including an N-channel field effect transistor and a P-channel field effect transistor, wherein the N-channel field effect transistor includes a gate node, a source node, a well node, and a drain node, and the P-channel field effect transistor includes a gate node, a source node, and a drain node, and wherein the drain node of the N-channel field effect transistor is coupled to the drain node of the P-channel field effect transistor; (b) a plurality of gate drivers, each of the plurality of gate drivers being coupled to the gate node of the N-channel field effect transistor of a corresponding one of the plurality of inverters; (c) a first bus operably coupled to the well node of the N-channel field effect transistor of each of the plurality of inverters; and (d) an address bus operably coupled to the plurality of gate drivers, wherein the address bus provides a first signal to at least one of the plurality of gate drivers while the first bus provides a second signal such that each inverter of the plurality of inverters that is coupled to a gate driver of the at least one of the plurality of gate drivers is permanently altered.
Claim 2
Dependent Claim
216 words
An integrated circuit identification apparatus comprising: (a) a plurality of inverters, each inverter of the plurality of inverters including an N-channel field effect transistor and a P-channel field effect transistor, wherein the N-channel field effect transistor includes a gate node, a source node, a well node, and a drain node, and the P-channel field effect transistor includes a gate node, a source node, and a drain node, and wherein the drain node of the N-channel field effect transistor is coupled to the drain node of the P-channel field effect transistor; (b) a plurality of gate drivers, each of the plurality of gate drivers being coupled to the gate node of the N-channel field effect transistor of a corresponding one of the plurality of inverters; (c) a first bus operably coupled to the well node of the N-channel field effect transistor of each of the plurality of inverters; and (d) an address bus operably coupled to the plurality of gate drivers, wherein the address bus provides a first signal to at least one of the plurality of gate drivers while the first bus provides a second signal such that each inverter of the plurality of inverters that is coupled to a gate driver of the at least one of the plurality of gate drivers is permanently altered.
Claim 3
Dependent Claim
54 words
The apparatus of claim 1 wherein a third signal provided on the address bus causes the plurality of inverters to be read, each of the plurality of inverters that has been permanently altered provides a first representation and each of the plurality of inverters that has not been permanently altered provides a second representation.
Claim 4
Dependent Claim
51 words
The apparatus of claim 2 wherein: (a) the first signal produces a voltage level of approximately 0 volts at the gate node of the N-channel field effect transistor of the corresponding one of the plurality of inverters; and (b) the second signal produces a voltage level of at least 7 volts.
Claim 5
Dependent Claim
48 words
The apparatus of claim 3 wherein permanently altering the each inverter of the plurality of inverters that is coupled to a gate driver of the at least one of the plurality of gate drivers is achieved by breaking down a gate-well isolation of the N-channel field effect transistor.
Claim 6
Dependent Claim
37 words
The apparatus of claim 4, wherein the first representation and the second representation are produced by pre-charging the drain node of each of the P-channel field effect transistors of the plurality of inverters to a pre-charge level.
Claim 7
Dependent Claim
79 words
An integrated circuit identification apparatus comprising: (a) a first switch having a first node, a second node, and a gating node; (b) a second switch having a first node, a second node, and a gating node, wherein the first node of the second switch is coupled to the second node of the first switch; and (c) gating circuit operably coupled to the second switch, wherein the second switch is permanently altered when the gating circuit generates an alteration signal.
Claim 8
Dependent Claim
79 words
An integrated circuit identification apparatus comprising: (a) a first switch having a first node, a second node, and a gating node; (b) a second switch having a first node, a second node, and a gating node, wherein the first node of the second switch is coupled to the second node of the first switch; and (c) gating circuit operably coupled to the second switch, wherein the second switch is permanently altered when the gating circuit generates an alteration signal.
Claim 9
Dependent Claim
42 words
The apparatus of claim 6 wherein a third signal provided by the gating circuit causes the circuit identification apparatus to be read, the first node of the second switch providing a first representation when altered and a second representation when not altered.
Claim 10
Dependent Claim
26 words
The apparatus of claim 7, wherein the first and second representations are produced by pre-charging the second node of the first switch to a pre-charge level.
Claim 11
Dependent Claim
214 words
An integrated circuit identification apparatus comprising: (a) a plurality of inverters, each inverter of the plurality of inverters including an N-channel field effect transistor and a P-channel field effect transistor, wherein the N-channel field effect transistor includes a gate node, a source node, and a drain node, and the P-channel field effect transistor includes a gate node, a source node, a well node, and a drain node, and wherein the drain node of the N-channel field effect transistor is coupled to the drain of the P-channel field effect transistor; (b) a plurality of gate drivers, each of the plurality of gate drivers being coupled to the gate node of the P-channel field effect transistor of a corresponding one of the plurality of inverters; (c) a first bus operably coupled to the well node of the P-channel field effect transistor of each of the plurality of inverters; and an address bus operably coupled to the plurality of gate drivers, wherein the address bus provides a first signal to at least one of the plurality of gate drivers while the first bus provides a second signal such that each inverter of the plurality of inverters that is coupled to a gate driver of the at least one of the plurality of gate drivers is permanently altered.
Claim 12
Dependent Claim
214 words
An integrated circuit identification apparatus comprising: (a) a plurality of inverters, each inverter of the plurality of inverters including an N-channel field effect transistor and a P-channel field effect transistor, wherein the N-channel field effect transistor includes a gate node, a source node, and a drain node, and the P-channel field effect transistor includes a gate node, a source node, a well node, and a drain node, and wherein the drain node of the N-channel field effect transistor is coupled to the drain of the P-channel field effect transistor; (b) a plurality of gate drivers, each of the plurality of gate drivers being coupled to the gate node of the P-channel field effect transistor of a corresponding one of the plurality of inverters; (c) a first bus operably coupled to the well node of the P-channel field effect transistor of each of the plurality of inverters; and an address bus operably coupled to the plurality of gate drivers, wherein the address bus provides a first signal to at least one of the plurality of gate drivers while the first bus provides a second signal such that each inverter of the plurality of inverters that is coupled to a gate driver of the at least one of the plurality of gate drivers is permanently altered.
Claim 13
Dependent Claim
55 words
The apparatus of claim 9 wherein a third signal provided on the address bus causes the plurality of inverters to be read, each of the plurality of gate drivers that has been permanently altered provides a first representation and each of the plurality of inverters that has not been permanently altered provides a second representation.
Claim 14
Dependent Claim
51 words
The apparatus of claim 10 wherein: (a) the first signal produces a voltage level of at least 7 volts at the gate node of the P-channel field effect transistor of the corresponding one of the plurality of inverters; and (b) the second signal produces a voltage level of approximately 0 volts.
Claim 15
Dependent Claim
48 words
The apparatus of claim 11 wherein permanently altering the each inverter of the plurality of inverters that is coupled to a gate driver of the at least one of the plurality of gate drivers is achieved by breaking down a gate-well isolation of the P-channel field effect transistor.
Claim 16
Dependent Claim
30 words
The apparatus of claim 12, wherein the first and second representations are produced by pre-charging the drain node of each of the N-channel field effect transistors to a pre-charge level.
Claim 17
Independent Claim
105 words
A method for identifying an integrated circuit, the method comprising the steps of: (a) providing a first plurality of field effect transistors on a substrate of the integrated circuit; (b) coupling a second plurality of field effect transistors to the first plurality of field effect transistors, each of the first plurality of field effect transistors serially coupled to a corresponding one of the second plurality of field effect transistors; (c) applying a damaging potential to and damaging at least one of the second plurality of field effect transistors; and (d) preventing further application of the damaging potential to the second plurality of field effect transistors.
Claim 18
Independent Claim
105 words
A method for identifying an integrated circuit, the method comprising the steps of: (a) providing a first plurality of field effect transistors on a substrate of the integrated circuit; (b) coupling a second plurality of field effect transistors to the first plurality of field effect transistors, each of the first plurality of field effect transistors serially coupled to a corresponding one of the second plurality of field effect transistors; (c) applying a damaging potential to and damaging at least one of the second plurality of field effect transistors; and (d) preventing further application of the damaging potential to the second plurality of field effect transistors.
Claim 19
Independent Claim
63 words
A method for identifying an integrated circuit, the method comprising the steps of: (a) providing a first field effect transistor on a substrate of an integrated circuit; (b) serially coupling a second field effect transistor to the first field effect transistor; and (c) applying a damaging potential to a gate of the second field effect transistor for damaging the second field effect transistor.
Claim 20
Independent Claim
63 words
A method for identifying an integrated circuit, the method comprising the steps of: (a) providing a first field effect transistor on a substrate of an integrated circuit; (b) serially coupling a second field effect transistor to the first field effect transistor; and (c) applying a damaging potential to a gate of the second field effect transistor for damaging the second field effect transistor.
Claim 21
Dependent Claim
232 words
An integrated circuit comprising: (a) a substrate; (b) a circuit deposited on the substrate; (c) a plurality of inverters deposited on the substrate, each inverter of the plurality of inverters including an N-channel field effect transistor and a P-channel field effect transistor, wherein the N-channel field effect transistor includes a gate node, a source node, a well node, and a drain node, and the P-channel field effect transistor includes a gate node, a source node, and a drain node, and wherein the drain node of the N-channel field effect transistor is coupled to the drain node of the P-channel field effect transistor; (d) a plurality of gate drivers deposited on the substrate, each of the plurality of gate drivers being coupled to the gate node of the N-channel field effect transistor of a corresponding one of the plurality of inverters; (e) a first bus deposited on the substrate and operably coupled to the well node of the N-channel field effect transistor of each of the plurality of inverters; and (f) an address bus deposited on the substrate and operably coupled to the plurality of gate drivers, wherein the address bus provides a first signal to at least one of the plurality of gate drivers while a second signal is provided on the first bus, each inverter that is coupled to a gate driver being provided with the first signal being permanently altered.
Claim 22
Dependent Claim
232 words
An integrated circuit comprising: (a) a substrate; (b) a circuit deposited on the substrate; (c) a plurality of inverters deposited on the substrate, each inverter of the plurality of inverters including an N-channel field effect transistor and a P-channel field effect transistor, wherein the N-channel field effect transistor includes a gate node, a source node, a well node, and a drain node, and the P-channel field effect transistor includes a gate node, a source node, and a drain node, and wherein the drain node of the N-channel field effect transistor is coupled to the drain node of the P-channel field effect transistor; (d) a plurality of gate drivers deposited on the substrate, each of the plurality of gate drivers being coupled to the gate node of the N-channel field effect transistor of a corresponding one of the plurality of inverters; (e) a first bus deposited on the substrate and operably coupled to the well node of the N-channel field effect transistor of each of the plurality of inverters; and (f) an address bus deposited on the substrate and operably coupled to the plurality of gate drivers, wherein the address bus provides a first signal to at least one of the plurality of gate drivers while a second signal is provided on the first bus, each inverter that is coupled to a gate driver being provided with the first signal being permanently altered.
References Cited (Backward Citations)
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Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-09-03 | 2000-03-04 | 2000-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-03 | 2004-03-04 | 2004-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-03 | 2008-03-04 | 2008-09-03 | $7700.00 | Window Closed / Lapsed |