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US5550854A
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Binary stratified structures for periodically pumped semiconductor lasers
Assignee: Avago Technologies International Sales Pte Ltd
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Filing: 1994-11-29
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Granted: 1996-08-27
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Expires: 2014-11-29
Abstract
Abstract A laser having a binary stratified structure of alternating sections of graded-index, separate confinement heterostructure (GRINSCH) and semi-insulating semiconductor formed in the direction of light propagation. The active region of the laser includes at least two GRINSCH sections upon a substrate and at least three filler sections sandwiching the at least two GRINSCH sections in an alternating fashion. An analysis of the practical limit on the minimum threshold current and the packaging problems of a semiconductor laser based on the binary stratified structure is included.
Inventors
- 👤 Howard Z. Chen
- 👤 Alfred Y. Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:25
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/1228; H01S5/30; H01S5/34; H01S5/3428
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
71 words
A graded-index, separate confinement heterostructure laser, comprising: a substrate; and a binary stratified structure along an axis of an optical path upon said substrate, wherein said binary stratified structure comprises an active region of the laser, and includes at least two graded-index, separate confinement heterostructure (GRINSCH) sections upon said substrate; and at least three filler sections upon said substrate and sandwiching said at least two GRINSCH sections in an alternating fashion.
Claim 2
Dependent Claim
71 words
A graded-index, separate confinement heterostructure laser, comprising: a substrate; and a binary stratified structure along an axis of an optical path upon said substrate, wherein said binary stratified structure comprises an active region of the laser, and includes at least two graded-index, separate confinement heterostructure (GRINSCH) sections upon said substrate; and at least three filler sections upon said substrate and sandwiching said at least two GRINSCH sections in an alternating fashion.
Claim 3
Dependent Claim
13 words
The laser according to claim 1, wherein said active region is electrically pumped.
Claim 4
Dependent Claim
12 words
The laser according to claim 1, wherein said substrate comprises a semiconductor.
Claim 5
Dependent Claim
14 words
The laser according to claim 3, wherein said semiconductor is a Group III-V material.
Claim 6
Dependent Claim
27 words
The laser according to claim 4, wherein said semiconductor includes one or more alloys comprising elements from a group consisting of Al, As, Ga, In, and P.
Claim 7
Dependent Claim
15 words
The laser according to claim 1, each GRINSCH section comprises a quadratic refractive index waveguide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-27 | 2000-02-26 | 2000-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-27 | 2004-02-26 | 2004-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-27 | 2008-02-26 | 2008-08-27 | $7700.00 | Window Closed / Lapsed |