US5550089A
Expired / Lapsed
US
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Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
Assignee: Agere Systems LLC
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Filing: 1994-03-23
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Granted: 1996-08-27
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Expires: 2014-03-23
Abstract
Abstract An optoelectronic lII-V or II-VI semiconductor device comprises a thin film coating with optical characteristics providing low midgap interface state density. A field effect device for inversion channel applications on III-V semiconductors also comprises a thin dielectric film providing required interface characteristics. The thin film is also applicable to passivation of states on exposed surfaces of electronic III-V devices. The thin film comprises a uniform, homogeneous, dense, stoichiometric gallium oxide (Ga 2 O 3 ) dielectric thin film, fabricated by electron-beam evaporation of a single crystal, high purity Gd 3 Ga 5 O 12 complex compound on semiconductor substrates kept at temperatures ranging from 40° to 370° C. and at background pressures at or above 1×10 -10 Torr.
Inventors
- 👤 Niloy K. Dutta
- 👤 Russell J. Fischer
- 👤 Neil E. J. Hunt
- 👤 Matthias Passlack
- 👤 Erdmann F. Schubert
- 👤 George J. Zydzik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:27
CPC Classifications
H; H10; H10F; H10F99/00; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/691; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; H10H; H10H20/00; H10H20/80; H10H20/84; H01; H01S; H01S5/00; H01S5/02; H01S5/028
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
108 words
A process of fabricating an optoelectronic device comprising a semiconductor surface selected from the groove consisting of III-V and II-VI compound semiconductors and a coating of gallium oxide on at least a region of said surface, in which said gallium oxide is a thin film of stoichiometric Ga 2 O 3 having low midgap interface state density, said Ga 2 O 3 coating is deposited on said semiconductor surface by electron-beam evaporation using a high purity single crystal Gd 3 Ga 5 O 12 source, said semiconductor surface being kept at temperatures ranging from 40° to 370° C. and at background pressures at or above 1×10 -10 Torr.
Claim 2
Dependent Claim
108 words
A process of fabricating an optoelectronic device comprising a semiconductor surface selected from the groove consisting of III-V and II-VI compound semiconductors and a coating of gallium oxide on at least a region of said surface, in which said gallium oxide is a thin film of stoichiometric Ga 2 O 3 having low midgap interface state density, said Ga 2 O 3 coating is deposited on said semiconductor surface by electron-beam evaporation using a high purity single crystal Gd 3 Ga 5 O 12 source, said semiconductor surface being kept at temperatures ranging from 40° to 370° C. and at background pressures at or above 1×10 -10 Torr.
Claim 3
Dependent Claim
44 words
A process of claim 1, in which said Ga 2 O 3 thin film is deposited on said semiconductor surface at temperatures below 50° C. and a background pressure of 1-2×10 -6 Torr without introduction of any additional O 2 into the deposition chamber.
Claim 4
Dependent Claim
13 words
A process of claim 2, in which said temperature is about 40° C.
Claim 5
Dependent Claim
43 words
A process of claim 1, in which said Ga 2 O 3 thin film is deposited on said semiconductor surface being kept at temperatures below 150° C. and with introduction of additional O 2 to a partial oxygen pressure of 2×10 -4 Torr.
Claim 6
Dependent Claim
13 words
A process of claim 1, in which said temperature is about 125° C.
Claim 7
Dependent Claim
22 words
A process of claim 1, in which said semiconductor surface is selected from the group consisting of light-emitting surfaces and light-receiving surfaces.
Claim 8
Dependent Claim
23 words
A process of claim 1, in which said device is a laser, and said Ga 2 O 3 coating is an antireflection coating.
Claim 9
Dependent Claim
34 words
A process of claim 1, in which said antireflection coating is on one facet of the laser with the other facet being coated by alternating layers of Si and Ga 2 O 3 .
Claim 10
Dependent Claim
32 words
A process of claim 1, in which said Ga 2 O 3 coating is on the semiconductor surface of a device selected from the group consisting of light emitting diodes and photodetectors.
Claim 11
Dependent Claim
33 words
A process of claim 1, in which said coating is deposited with an interlace state density near the midgap in the range from 1×10 13 to 7×10 11 cm -2 eV -1 .
Claim 12
Dependent Claim
89 words
A process of claim 1, in which said device is a field effect device for inversion channel applications on III-V and II-VI compound semiconductors, said device comprising a semiconductor body, a Ga 2 O 3 layer on the body and electrodes to the body and the Ga 2 O 3 layer, said Ga 2 O 3 layer is deposited by electron beam evaporation using a Gd 3 Ga 5 O 12 crystal on semiconductor substrates maintained above 125° C. with an O 2 partial pressure of 2×10 -4 Torr.
Claim 13
Dependent Claim
45 words
A process of claim 11, in which said Ga 2 O 3 layer is deposited by electron beam evaporation using a Gd 3 Ga 5 O 12 crystal on GaAs substrates maintained at about 350° C. with O 2 partial pressure of 2×10 -4 Torr.
Claim 14
Dependent Claim
27 words
A process of claim 12, in which said Ga 2 O 3 layer demonstrates a midgap interface state density below 1×10 12 cm -2 eV -1 .
Claim 15
Dependent Claim
101 words
A process of fabrication of an electronic device comprising a semiconductor body selected from the group consisting of III-V and II-VI semiconductors, a dielectric layer on the body and electrodes to the body and the dielectric layer, wherein said dielectric layer is stoichiometric Ga 2 O 3 demonstrating a midgap interface density below 1×10 12 cm -2 eV -1 , and wherein said Ga 2 O 3 layer is deposited by electron beam evaporation using a Gd 3 Ga 5 O 12 crystal on semiconductor substrates maintained above 125° C. with an O 2 partial pressure of of 2×10 -4 Torr.
Claim 16
Dependent Claim
101 words
A process of fabrication of an electronic device comprising a semiconductor body selected from the group consisting of III-V and II-VI semiconductors, a dielectric layer on the body and electrodes to the body and the dielectric layer, wherein said dielectric layer is stoichiometric Ga 2 O 3 demonstrating a midgap interface density below 1×10 12 cm -2 eV -1 , and wherein said Ga 2 O 3 layer is deposited by electron beam evaporation using a Gd 3 Ga 5 O 12 crystal on semiconductor substrates maintained above 125° C. with an O 2 partial pressure of of 2×10 -4 Torr.
Claim 17
Dependent Claim
83 words
A process of claim 14, in which said device is a field effect device for inversion channel applications on III-V and II-VI compound semiconductors, said device comprising a semiconductor body, a Ga 2 O 3 layer on the body and electrodes to the body and said Ga 2 O 3 layer is deposited by electron beam evaporation using the Gd 3 Ga 5 O 12 crystal on semiconductor substrates maintained above 125° C. with an O 2 partial pressure of 2×10 -4 Torr.
Claim 18
Dependent Claim
22 words
A process of claim 14, in which said Ga 2 O 3 layer is deposited on GaAs substrates maintained at 350° C.
References Cited (Backward Citations)
US4617192A
Cited
US4749255A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-27 | 2000-02-26 | 2000-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-27 | 2004-02-26 | 2004-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-27 | 2008-02-26 | 2008-08-27 | $7700.00 | Window Closed / Lapsed |