Method for fabricating capacitors of semiconductor device

Claim 1

A method for fabricating a capacitor of a semiconductor device comprising the steps of: forming a lower insulating layer on a semiconductor substrate, depositing a first insulating film on the lower insulating layer, and then forming a first storage electrode contact mask on the first insulating film; selectively growing the first insulating film, thereby forming a selectively-grown oxide film, and then removing the first contact mask; forming a first conduction layer on the resulting structure obtained after the removal of the first contact mask, coating a second insulating film on the first conduction layer, planarizing the second insulating film using a full etch process, and then forming a second storage electrode contact mask on the second insulating film; sequentially etching the first conduction layer, the selectively-grown oxide film, the first insulating film and the lower insulating layer using the second contact mask, thereby forming a contact hole for exposing a portion of the semiconductor substrate; depositing a second conduction layer on the resulting structure obtained after the formation of the contact hole such that the second conduction layer is in contact with the semiconductor substrate through the contact hole, and then forming a storage electrode mask on the second conduction layer; sequentially etching the second conduction layer, the second insulating film and the first conduction layer using the storage electrode mask, thereby forming a second-conduction layer pattern and a first-conduction layer pattern, and then removing the storage electrode mask; and removing the second insulating film, the first insulating film and the selectively-grown oxide film using a wet etch process, whereby a storage electrode with an increased surface area is formed.

Claim 2

A method for fabricating a capacitor of a semiconductor device comprising the steps of: forming a lower insulating layer on a semiconductor substrate, depositing a first insulating film on the lower insulating layer, and then forming a first storage electrode contact mask on the first insulating film; selectively growing the first insulating film, thereby forming a selectively-grown oxide film, and then removing the first contact mask; forming a first conduction layer on the resulting structure obtained after the removal of the first contact mask, coating a second insulating film on the first conduction layer, planarizing the second insulating film using a full etch process, and then forming a second storage electrode contact mask on the second insulating film; sequentially etching the first conduction layer, the selectively-grown oxide film, the first insulating film and the lower insulating layer using the second contact mask, thereby forming a contact hole for exposing a portion of the semiconductor substrate; depositing a second conduction layer on the resulting structure obtained after the formation of the contact hole such that the second conduction layer is in contact with the semiconductor substrate through the contact hole, and then forming a storage electrode mask on the second conduction layer; sequentially etching the second conduction layer, the second insulating film and the first conduction layer using the storage electrode mask, thereby forming a second-conduction layer pattern and a first-conduction layer pattern, and then removing the storage electrode mask; and removing the second insulating film, the first insulating film and the selectively-grown oxide film using a wet etch process, whereby a storage electrode with an increased surface area is formed.