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US5543738A
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Multi-stage sense amplifier for read-only memory having current comparators
Assignee: United Microelectronics Corp
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Filing: 1994-12-27
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Granted: 1996-08-06
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Expires: 2014-12-27
Abstract
Abstract A multi-stage sense amplifier for read-only memory having a memory array consisting of a large number of memory cell units. The sense amplifier includes a sense amplifier for sensing the currents flowing through the transistor of the memory cell units of the read-only memory. The memory cell unit transistors are programmed with one of four current capacity characteristics. The sense amplifier also includes three current comparators coupled to the sense amplifier, with each of the comparators having a current comparing unit for comparing the sensed current flowing through the memory cell unit transistors to the current flowing through the comparators. An output of each of the three comparators is provided for identifying whether or not the current of a four capacity characteristics flowing through the memory cell unit transistors is larger than the current flowing through the comparator. Each of the outputs of the comparators is combined to represent the data stored in each of the memory cell units of the read-only memory having two bits per memory cell unit.
Inventors
- 👤 Fong-Chun Lee
- 👤 Chien-Chih Fu
- 👤 Nan-Chueh Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:37
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5692; G11C7/00; G11C7/06
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
286 words
A multi-stage sense amplifier for read-only memory having a memory array consisting of a plurality of memory cell units, said multi-stage sense amplifier comprising: a sense amplifier for sensing the current flowing through a transistor of said memory cell units of said read-only memory, said memory cell unit transistor being programmed with one of four memory cell unit current capacity characteristics; three current comparators coupled to said sense amplifier, each of said comparators having a current comparing unit for comparing a sensed current flowing through said memory cell unit transistor a current flowing through each of said comparators; wherein an output of each of said three comparators is provides for identifying whether or not the current flowing through said memory cell unit transistor is larger than said currents flowing through said comparators, and each of said outputs of each of said comparators representing multibit data stored in each of said memory cell units of said read-only memory; wherein said three current comparators each includes a current comparing unit having comparison unit transistors selected from four possible transistor characteristics, said four possible transistor characteristics having four predefined current capacity characteristics that are respectively and virtually equal to said four memory cell unit current capacity characteristics; and wherein each of said three current comparing units includes four types of comparison unit transistors, with every two of said four comparison unit transistors connected in series, and the two pairs of series comparison unit transistors connected in parallel, said every two comparison unit transistors connected in series having the same physical dimensions providing the same predefined current capacity characteristics, while the comparison unit transistors not in the same series connection having different physical dimensions providing different predefined current capacity characteristics.
Claim 2
Dependent Claim
286 words
A multi-stage sense amplifier for read-only memory having a memory array consisting of a plurality of memory cell units, said multi-stage sense amplifier comprising: a sense amplifier for sensing the current flowing through a transistor of said memory cell units of said read-only memory, said memory cell unit transistor being programmed with one of four memory cell unit current capacity characteristics; three current comparators coupled to said sense amplifier, each of said comparators having a current comparing unit for comparing a sensed current flowing through said memory cell unit transistor a current flowing through each of said comparators; wherein an output of each of said three comparators is provides for identifying whether or not the current flowing through said memory cell unit transistor is larger than said currents flowing through said comparators, and each of said outputs of each of said comparators representing multibit data stored in each of said memory cell units of said read-only memory; wherein said three current comparators each includes a current comparing unit having comparison unit transistors selected from four possible transistor characteristics, said four possible transistor characteristics having four predefined current capacity characteristics that are respectively and virtually equal to said four memory cell unit current capacity characteristics; and wherein each of said three current comparing units includes four types of comparison unit transistors, with every two of said four comparison unit transistors connected in series, and the two pairs of series comparison unit transistors connected in parallel, said every two comparison unit transistors connected in series having the same physical dimensions providing the same predefined current capacity characteristics, while the comparison unit transistors not in the same series connection having different physical dimensions providing different predefined current capacity characteristics.
Claim 3
Dependent Claim
73 words
The multi-stage sense amplifier for read-only memory of claim 1, wherein each of said current comparators compares the current flowing therein to said current flowing through said memory cell unit transistor sensed by said sense amplifier, each of said current comparators outputs a logical one when said current of said memory cell unit transistor is greater than the current flowing therethrough said comparator, and a logical zero when the comparison result is smaller.
Claim 4
Dependent Claim
25 words
The multi-stage sense amplifier for read-only memory of claim 2, wherein said predefined current capacity characteristics are determined by the physical dimensions of said transistors.
Claim 5
Dependent Claim
31 words
The multi-stage sense amplifier for read-only memory of claim 3, wherein said memory cell unit current capacity characteristics are determined by the channel region width of said memory cell unit transistor.
Claim 6
Dependent Claim
51 words
The multi-stage sense amplifier for read-only memory of claim 4, wherein said memory cell unit current capacity characteristics are determined by ion implantation into the channel region of said memory cell transistor into selected none, one-third, two-thirds, or entire channel width for presenting said four memory cell unit current capacity characteristics.
Claim 7
Dependent Claim
37 words
The multi-stage sense amplifier for read-only memory of claim 5, wherein a decoder means is connected to said three current comparators for decoding said outputs into one of four two-bit data including 00, 01, 10 and 11.
References Cited (Backward Citations)
US4287570A
Cited
JPS59151395A
Cited
US4653023A
Cited
US5012448A
Cited
US5043940A
Cited
US5163021A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-06 | 2000-02-05 | 2000-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-06 | 2004-02-05 | 2004-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-06 | 2008-02-05 | 2008-08-06 | $7700.00 | Window Closed / Lapsed |