Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
130 words
A p-channel transistor comprising: a drain electrode constructed as a first p-region in an n-well, the n-well being embedded in a third p-region, the drain electrode being coupled to a positive pole of a voltage supply and the third p-region being coupled to one of a ground and a negative pole of the voltage supply; a source electrode constructed as a second p-region in the n-well, the source electrode being coupled to the n-well via an ohmic contact; and a gate electrode coupled to a predetermined gate voltage, U g , wherein U g <U + -.linevert split.U TH .linevert split., wherein U + represents a voltage at the positive pole of the voltage supply and .linevert split.U TH .linevert split. represents an absolute value of a p-channel threshold voltage.
Claim 2
Dependent Claim
130 words
A p-channel transistor comprising: a drain electrode constructed as a first p-region in an n-well, the n-well being embedded in a third p-region, the drain electrode being coupled to a positive pole of a voltage supply and the third p-region being coupled to one of a ground and a negative pole of the voltage supply; a source electrode constructed as a second p-region in the n-well, the source electrode being coupled to the n-well via an ohmic contact; and a gate electrode coupled to a predetermined gate voltage, U g , wherein U g <U + -.linevert split.U TH .linevert split., wherein U + represents a voltage at the positive pole of the voltage supply and .linevert split.U TH .linevert split. represents an absolute value of a p-channel threshold voltage.
Claim 3
Dependent Claim
13 words
The transistor according to claim 1, wherein the third p-region surrounds the n-well.
Claim 4
Dependent Claim
32 words
The transistor according to claim 1, further comprising a bulk electrode formed as a p-channel between the drain electrode and the source electrode by applying the gate voltage to the gate electrode.
Claim 5
Dependent Claim
24 words
The transistor according to claim 1, wherein the n-well includes an n + -region in contact with the source electrode via the ohmic contact.
Claim 6
Dependent Claim
28 words
The transistor according to claim 1, wherein the drain electrode is connected to a conductor track which is further connected to the positive pole of the voltage supply.
Claim 7
Dependent Claim
16 words
The transistor according to claim 1, wherein the gate electrode is connected to the third p-region.
Claim 8
Dependent Claim
15 words
The transistor according to claim 1, wherein the gate electrode contacts a p + -region.
Claim 9
Dependent Claim
23 words
The transistor according to claim 1, wherein the gate electrode contacts a conductor track, the conductor track being connected to the third p-region.