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US5543642A Expired / Lapsed US ⏱️ 0.0 years remaining

P-channel transistor

Assignee: Robert Bosch GmbH
•
Filing: 1995-06-07
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Granted: 1996-08-06
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Expires: 2015-06-07
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Abstract

Abstract A p-channel transistor has a drain electrode (12), a source electrode (13), a gate electrode (16) and a bulk electrode (14), the drain and source electrodes (12, 13) being constructed as p-regions in an n-well (10) and the well (10) itself being embedded in a surrounding p-region. The bulk electrode is simultaneously the well terminal and is connected to the source electrode (13), while the drain electrode (12) is connected to the positive pole (U + ) of the operating voltage. This arrangement confers a reliable resistance to polarity reversal in conjunction with a minimum area requirement; even at relatively high temperatures, only negligible leakage currents flow; and, there is a need only for a single well (10) on which it is also possible to accommodate still other components.

Inventors

  • 👤 Gerard Byrne

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 14:44
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D89/00; H10D89/211; H10D89/213

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 130 words
A p-channel transistor comprising: a drain electrode constructed as a first p-region in an n-well, the n-well being embedded in a third p-region, the drain electrode being coupled to a positive pole of a voltage supply and the third p-region being coupled to one of a ground and a negative pole of the voltage supply; a source electrode constructed as a second p-region in the n-well, the source electrode being coupled to the n-well via an ohmic contact; and a gate electrode coupled to a predetermined gate voltage, U g , wherein U g <U + -.linevert split.U TH .linevert split., wherein U + represents a voltage at the positive pole of the voltage supply and .linevert split.U TH .linevert split. represents an absolute value of a p-channel threshold voltage.
Claim 2
Dependent Claim 130 words
A p-channel transistor comprising: a drain electrode constructed as a first p-region in an n-well, the n-well being embedded in a third p-region, the drain electrode being coupled to a positive pole of a voltage supply and the third p-region being coupled to one of a ground and a negative pole of the voltage supply; a source electrode constructed as a second p-region in the n-well, the source electrode being coupled to the n-well via an ohmic contact; and a gate electrode coupled to a predetermined gate voltage, U g , wherein U g <U + -.linevert split.U TH .linevert split., wherein U + represents a voltage at the positive pole of the voltage supply and .linevert split.U TH .linevert split. represents an absolute value of a p-channel threshold voltage.
Claim 3
Dependent Claim 13 words
The transistor according to claim 1, wherein the third p-region surrounds the n-well.
Claim 4
Dependent Claim 32 words
The transistor according to claim 1, further comprising a bulk electrode formed as a p-channel between the drain electrode and the source electrode by applying the gate voltage to the gate electrode.
Claim 5
Dependent Claim 24 words
The transistor according to claim 1, wherein the n-well includes an n + -region in contact with the source electrode via the ohmic contact.
Claim 6
Dependent Claim 28 words
The transistor according to claim 1, wherein the drain electrode is connected to a conductor track which is further connected to the positive pole of the voltage supply.
Claim 7
Dependent Claim 16 words
The transistor according to claim 1, wherein the gate electrode is connected to the third p-region.
Claim 8
Dependent Claim 15 words
The transistor according to claim 1, wherein the gate electrode contacts a p + -region.
Claim 9
Dependent Claim 23 words
The transistor according to claim 1, wherein the gate electrode contacts a conductor track, the conductor track being connected to the third p-region.

References Cited (Backward Citations)

US3789503A Cited
EP0121096A2 Cited
EP0319047A2 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-08-06 2000-02-05 2000-08-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-08-06 2004-02-05 2004-08-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-08-06 2008-02-05 2008-08-06 $7700.00 Window Closed / Lapsed

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