EP0319047A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Power integrated circuit
Assignee: Nissan Motor Co Ltd
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Filing: 1988-12-05
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Granted: —
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Expires: 2008-12-05
Abstract
Abstract A single-chip integrated semiconductor device, in which a P-type isolation layer, to which the ground voltage is applied, is grown on a semiconductor substrate and a power voltage is applied to the substrate, in which a vettical MOSFET has a drain region of a first N-type well region formed in the P-type isolation layer so as to reach the semiconductor substrate therethrough, and is used in an output device for a load, in which a P-channel MOSFET is provided in the N-type well region formed in the P-type isolation layer, a constant voltage lower than the power voltage being applied to the N-type well region, and an N-channel MOSFET is formed in the P-type isolation layer, and in which the P-channel and N-channel MOSFETs constitute a CMOS circuit constructing a peripheral circuit for the vertical MOSFET.
Inventors
- 👤 Teruyoshi Mihara
- 👤 Tsutomu Matsushita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 20:55
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H03; H03K; H03K17/00; H03K17/06; H03K17/063; H03K17/08; H03K17/082; H03K17/0822; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10D84/02; H10D84/03; H10D84/038; H10D84/837; H10D84/839; H10D84/85; H10D84/856; H10D89/00; H10D89/60; H10D89/601; H10W; H10W10/00; H10W10/01
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
141 words
A semiconductor device, comprising: a semiconductor substrate having a first conductivity type, to which a power voltage is applied; an isolation layer having a second conductivity type, grown on the semiconductor substrate, a ground voltage being applied to the isolation layer; a vertical MOSFET having a substantial drain region of a first well region having the first conductivity type, formed in the isolation layer to reach the semiconductor substrate therethrough and being used as output means for a load; a P-channel MOSFET formed in a second well region having the first conductivity type, which is formed in the isolation layer, a constant voltage lower than the power voltage being applied to the second well region; and an N-channel MOSFET formed in the isolation layer, the P-channel and N-channel MOSFETs constituting a CMOS circuit constructing a peripheral circuit for the vertical MOSFET.
Claim 2
Dependent Claim
141 words
A semiconductor device, comprising: a semiconductor substrate having a first conductivity type, to which a power voltage is applied; an isolation layer having a second conductivity type, grown on the semiconductor substrate, a ground voltage being applied to the isolation layer; a vertical MOSFET having a substantial drain region of a first well region having the first conductivity type, formed in the isolation layer to reach the semiconductor substrate therethrough and being used as output means for a load; a P-channel MOSFET formed in a second well region having the first conductivity type, which is formed in the isolation layer, a constant voltage lower than the power voltage being applied to the second well region; and an N-channel MOSFET formed in the isolation layer, the P-channel and N-channel MOSFETs constituting a CMOS circuit constructing a peripheral circuit for the vertical MOSFET.
Claim 3
Dependent Claim
16 words
The device of claim 1, also including power supply circuit means for generating the constant voltage.
Claim 4
Dependent Claim
120 words
The device of claim 2, wherein the power supply circuit means including: a second P-channel MOSFET having a high voltage withstanding structure, formed in a third well region having the first conductivity type, which is formed in the isolation layer to reach the semiconductor substrate therethrough; a second N-channel MOSFET having a high voltage withstanding structure, formed in the isolation layer; a bipolar transistor having a well region having the second conductivity type, formed in a fourth well region having the first conductivity type, which is formed in the isolation layer to reach the semiconductor substrate therethrough; and a Zener diode having a diffusion layer having the second conductivity type for controlling a Zener voltage, formed in the isolation layer.
Claim 5
Dependent Claim
15 words
The device of claim 1, wherein the vertical MOSFET is used as a high-side switch.
Claim 6
Dependent Claim
20 words
The device of claim 3, wherein the constant voltage is determined depending on the Zener voltage of the Zener diode.
References Cited (Backward Citations)
No citation records indexed.
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