Abstract A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO 2 may also be utilized. The capacitor is preferably constructed over the drain of an FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.
A capacitor structure comprising: a bottom electrode comprising a layer of Pt in contact with a first layer of an ohmic material; a dielectric layer comprising lead zirconium titanate doped with an element having an oxidation state greater than +4; and a top electrode comprising a second layer of ohmic material in contact with a layer of Pt, wherein said first and second layers of ohmic material sandwich said dielectric layer.
Claim 2
Dependent Claim
71 words
A capacitor structure comprising: a bottom electrode comprising a layer of Pt in contact with a first layer of an ohmic material; a dielectric layer comprising lead zirconium titanate doped with an element having an oxidation state greater than +4; and a top electrode comprising a second layer of ohmic material in contact with a layer of Pt, wherein said first and second layers of ohmic material sandwich said dielectric layer.
Claim 3
Dependent Claim
22 words
The capacitor structure of claim 1 wherein said ohmic material is chosen from the group consisting of LSCO and RuO 2 .
Claim 4
Dependent Claim
24 words
The capacitor structure of claim 1 further comprising an FET having a gate, source, and drain, said drain being connected to said bottom electrode.
Claim 5
Dependent Claim
23 words
The capacitor structure of claim 3 wherein said FET is constructed in a silicon substrate and wherein said bottom electrode overlies said drain.
Claim 6
Dependent Claim
19 words
The capacitor structure of claim 4 wherein said bottom electrode is connected to said drain by a polysilicon conductor.
Claim 7
Dependent Claim
20 words
The capacitor structure of claim 1 wherein said doping element is present in a concentration of between 1% and 8%.