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US5541529A
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Field programmable gate array transferring signals at high speed
Assignee: Renesas Electronics Corp
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Filing: 1995-05-25
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Granted: 1996-07-30
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Expires: 2015-05-25
Abstract
Abstract A field programmable gate array includes a logic blocks, switching elements for establishing a signal propagation path, and memory cells provided corresponding to the switching elements for storing data determining on and off states of corresponding switching elements. In this gate array, a supply voltage fed to a power input terminal is transmitted to power supply nodes of logic circuit blocks. A booster circuit boosts the supply voltage fed to the power input terminal and feeds the boosted voltage to power supply nodes of memory cells for programming a signal propagation path. A high-level signal potential of each memory cell is fed to the gate of an n-channel MOS transistor which functions as the switching element. The switching elements are disposed on signal lines and serve to interconnect the signal lines selectively to establish a signal propagation path. The current supply capability of the MOS transistors is enhanced to realize faster propagation of the signal, and any harmful influence of the threshold voltage exerted on the signal amplitude loss can be suppressed by a rise of the gate potential in each MOS transistor.
Inventors
- 👤 Koichiro Mashiko
- 👤 Hiroaki Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 07:51
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/173; H03K19/177; H03K19/1778; H03K19/17792; H03K19/0008; H03K19/0013; H03K19/1733; H03K19/1735; H03K19/1736; H03K19/17704
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
248 words
The field programmable gate array comprising: a plurality of logic blocks operating with voltages applied to a first power supply node and a second power supply node respectively; a plurality of interconnection lines; a plurality of switching elements for selectively interconnecting said plurality of interconnection lines among said logic blocks; a plurality of memory cells disposed in correspondence to said switching elements respectively and connected between a third power supply node and a fourth power supply node, each of the memory cells storing data to determine an on and off state of a corresponding switching element and setting the corresponding switching element in an on and off state in accordance with the stored data; a first voltage source for feeding predetermined voltages to the first and second power supply nodes for said plurality of logic blocks; and a second voltage source for feeding voltage to said third and fourth power supply nodes, the difference between the voltages at said third and fourth power supply nodes being greater than the difference between the voltages at said first and second power supply nodes wherein said second voltage source includes voltage change means coupled to said voltage sources to change the voltages fed from said voltage sources in such a manner that the difference between the changed voltages becomes greater in absolute value than the difference between the voltages fed to said first and second power supply nodes, and feeding the changed voltages to said third and fourth power supply nodes.
Claim 2
Dependent Claim
248 words
The field programmable gate array comprising: a plurality of logic blocks operating with voltages applied to a first power supply node and a second power supply node respectively; a plurality of interconnection lines; a plurality of switching elements for selectively interconnecting said plurality of interconnection lines among said logic blocks; a plurality of memory cells disposed in correspondence to said switching elements respectively and connected between a third power supply node and a fourth power supply node, each of the memory cells storing data to determine an on and off state of a corresponding switching element and setting the corresponding switching element in an on and off state in accordance with the stored data; a first voltage source for feeding predetermined voltages to the first and second power supply nodes for said plurality of logic blocks; and a second voltage source for feeding voltage to said third and fourth power supply nodes, the difference between the voltages at said third and fourth power supply nodes being greater than the difference between the voltages at said first and second power supply nodes wherein said second voltage source includes voltage change means coupled to said voltage sources to change the voltages fed from said voltage sources in such a manner that the difference between the changed voltages becomes greater in absolute value than the difference between the voltages fed to said first and second power supply nodes, and feeding the changed voltages to said third and fourth power supply nodes.
Claim 3
Dependent Claim
35 words
The field programmable gate array according to claim 1, further comprising a means for inhibiting the operation of said voltage change means in response to a standby mode instruction signal indicating an inactive chip operation.
Claim 4
Dependent Claim
71 words
The field programmable gate array according to claim 1, wherein said voltage changing means includes a first voltage generator for generating a voltage higher than the voltage applied to said first power supply node for application to said third power supply node, and a second voltage generator for generating a voltage not higher than the voltage applied to said second power supply node for application to said fourth power supply node.
Claim 5
Dependent Claim
41 words
The field programmable gate array according to claim 3, wherein each of the switching elements comprises a transmission gate including a pair of p channel and n channel field effect transistors, and wherein said second voltage generator generates a negative potential.
Claim 6
Dependent Claim
30 words
The field programmable gate array according to claim 3, wherein said second voltage generator produces a voltage equal in level to the voltage applied to the second power supply node.
Claim 7
Dependent Claim
64 words
The field programmable gate array according to claim 1, wherein said first voltage source includes a first node receiving externally applied voltage to be fed to said first and second power supply nodes, and said second voltage source includes a second node provided separately from said first node, for receiving externally applied voltage to be transmitted to said third and fourth power supply nodes.
Claim 8
Dependent Claim
177 words
A field programmable gate array comprising: a plurality of logic blocks; a plurality of interconnection lines; a plurality of switching elements for selectively interconnecting said plurality of interconnection lines between said plurality of logic blocks; a plurality of memory cells disposed in correspondence to said switching elements respectively, each of the memory cells storing data to determine an on and off state of a corresponding switching element and setting the corresponding switching element in an on and off state in accordance with the stored data; and a plurality of transfer elements disposed between said memory cells and said switching elements respectively, each of the transfer elements functioning to transfer the output of a corresponding memory cell to a control electrode of the corresponding switching element; wherein each of said transfer elements transfers the output of the corresponding memory cell to the control electrode of the corresponding switching element, and separates the corresponding memory cell from said control electrode when the output of the corresponding memory cell has a potential level for turning on the corresponding switching element.
Claim 9
Dependent Claim
177 words
A field programmable gate array comprising: a plurality of logic blocks; a plurality of interconnection lines; a plurality of switching elements for selectively interconnecting said plurality of interconnection lines between said plurality of logic blocks; a plurality of memory cells disposed in correspondence to said switching elements respectively, each of the memory cells storing data to determine an on and off state of a corresponding switching element and setting the corresponding switching element in an on and off state in accordance with the stored data; and a plurality of transfer elements disposed between said memory cells and said switching elements respectively, each of the transfer elements functioning to transfer the output of a corresponding memory cell to a control electrode of the corresponding switching element; wherein each of said transfer elements transfers the output of the corresponding memory cell to the control electrode of the corresponding switching element, and separates the corresponding memory cell from said control electrode when the output of the corresponding memory cell has a potential level for turning on the corresponding switching element.
Claim 10
Dependent Claim
69 words
The field programmable gate array according to claim 7, wherein each of the memory cells receives a power supply potential to output a data at a level of the power supply potential for turning on a corresponding switching element, and wherein each of the transfer elements comprises an insulated gate type field effect transistor receiving a reference potential no less than said power supply potential at a control gate.
Claim 11
Dependent Claim
163 words
The field programmable gate array comprising: a plurality of logic blocks; a plurality of interconnection lines; a plurality of transmission gates for selectively interconnecting said plurality of interconnection lines between said plurality of logic blocks, each of the transmission gates including a p-channel field effect transistor and an n-channel field effect transistor; and a plurality of memory cells disposed in correspondence to said transmission gates respectively, each of the memory cell storing data to determine an on and off state of a corresponding transmission gate and sets the corresponding transmission gate in an on/off state in accordance with the stored data a first voltage source for feeding first and second operation power supply voltages to said plurality of logic blocks, and a second voltage source for feeding third and fourth operation power supply voltages to said plurality of memory cells, the difference between the first and second power supply voltages being smaller than the difference between the third and fourth power supply voltages.
Claim 12
Dependent Claim
163 words
The field programmable gate array comprising: a plurality of logic blocks; a plurality of interconnection lines; a plurality of transmission gates for selectively interconnecting said plurality of interconnection lines between said plurality of logic blocks, each of the transmission gates including a p-channel field effect transistor and an n-channel field effect transistor; and a plurality of memory cells disposed in correspondence to said transmission gates respectively, each of the memory cell storing data to determine an on and off state of a corresponding transmission gate and sets the corresponding transmission gate in an on/off state in accordance with the stored data a first voltage source for feeding first and second operation power supply voltages to said plurality of logic blocks, and a second voltage source for feeding third and fourth operation power supply voltages to said plurality of memory cells, the difference between the first and second power supply voltages being smaller than the difference between the third and fourth power supply voltages.
Claim 13
Dependent Claim
29 words
The field programmable gate array according to claim 9, wherein said third power supply voltage is a positive voltage, and said fourth power supply voltage is a negative voltage.
Claim 14
Dependent Claim
89 words
The field programmable gate array according to claim 9, wherein each of said memory cells is supplied with the third operation power supply voltage, and said field programmable gate array further includes a plurality of transfer elements provided between each of the memory cells and each of the switching elements, for capacitively decoupling gates of n-channel field effect transistors of corresponding switching elements and corresponding memory cells, when corresponding memory cells supply data at a level of the operation power supply voltage for turning on the corresponding switching elements.
Claim 15
Dependent Claim
69 words
The field programmable gate array according to claim 9, wherein said second voltage source comprises voltage changing circuitry coupled to said first voltage source for changing the first and second voltages fed from said first voltage source to said third and fourth voltages, and inhibition gate responsive to a mode signal indicating no operation of said plurality of logic blocks for inhibiting the operation of said voltage changing circuitry.
Claim 16
Dependent Claim
224 words
A field programmable gate array comprising: a plurality of logic blocks operating with voltages applied to a first power supply node and a second power supply node respectively; a plurality of interconnection lines; a plurality of transmission gates for selectively interconnecting said plurality of interconnection lines between said plurality of logic blocks, each transmission gate including a p-channel field effect transistor and an n-channel field effect transistor; a plurality of memory cells disposed in correspondence to said transmission gates respectively and connected between a third power supply node and a fourth power supply node, each of the memory cells storing therein data to determine an on and off state of a corresponding transmission gate and sets the corresponding transmission gate in an on or off state in accordance with the stored data having one of the voltage levels of said third and fourth power supply nodes; a first voltage source for feeding predetermined voltages to the first and second power supply nodes for said plurality of logic blocks; and a second voltage source for changing the voltages fed from said first voltage source, in such a manner that the difference between the changed voltages becomes greater than the difference between the voltages fed to said first and second power supply nodes, and feeding the changed voltages to said third and fourth power supply nodes.
Claim 17
Dependent Claim
224 words
A field programmable gate array comprising: a plurality of logic blocks operating with voltages applied to a first power supply node and a second power supply node respectively; a plurality of interconnection lines; a plurality of transmission gates for selectively interconnecting said plurality of interconnection lines between said plurality of logic blocks, each transmission gate including a p-channel field effect transistor and an n-channel field effect transistor; a plurality of memory cells disposed in correspondence to said transmission gates respectively and connected between a third power supply node and a fourth power supply node, each of the memory cells storing therein data to determine an on and off state of a corresponding transmission gate and sets the corresponding transmission gate in an on or off state in accordance with the stored data having one of the voltage levels of said third and fourth power supply nodes; a first voltage source for feeding predetermined voltages to the first and second power supply nodes for said plurality of logic blocks; and a second voltage source for changing the voltages fed from said first voltage source, in such a manner that the difference between the changed voltages becomes greater than the difference between the voltages fed to said first and second power supply nodes, and feeding the changed voltages to said third and fourth power supply nodes.
Claim 18
Dependent Claim
63 words
The field programmable gate array according to claim 13, wherein said second voltage source comprises a voltage change means coupled to said first voltage source and serving to change the voltages fed from said first voltage source, and means for inhibiting the operation of said voltage change means in response to a standby mode indication signal indicating no operation of the logic blocks.
Claim 19
Dependent Claim
220 words
A field programmable gate array comprising: a plurality of logic blocks; a plurality of interconnection lines; a plurality of transmission gates for selectively interconnecting said plurality of interconnection lines between said plurality of logic blocks, each of the transmission gates including a p-channel field effect transistor and an n-channel field effect transistor; a plurality of memory cells disposed in correspondence to said transmission gates respectively each of the memory cell storing data to determine an on and off state of a corresponding transmission gate and producing a complementary signal outputs for setting the corresponding transmission gate in an on or off state in accordance with the stored data; and a plurality of transfer means disposed between said memory cells and the transmission gates respectively, each of the transfer means and functioning to transfer the complementary signal outputs, of a corresponding memory cell to a control electrode of a corresponding transmission gate; wherein each of said transfer means includes a transfer element, and when the outputs of the corresponding memory cell switch on the corresponding transmission gate, the transfer element separates the corresponding memory cell from a corresponding field effect transistor in the corresponding transmission gate in the transfer path of at least one complementary signal output of the corresponding memory cell while maintaining the field effect transistor in an on-state.
Claim 20
Dependent Claim
220 words
A field programmable gate array comprising: a plurality of logic blocks; a plurality of interconnection lines; a plurality of transmission gates for selectively interconnecting said plurality of interconnection lines between said plurality of logic blocks, each of the transmission gates including a p-channel field effect transistor and an n-channel field effect transistor; a plurality of memory cells disposed in correspondence to said transmission gates respectively each of the memory cell storing data to determine an on and off state of a corresponding transmission gate and producing a complementary signal outputs for setting the corresponding transmission gate in an on or off state in accordance with the stored data; and a plurality of transfer means disposed between said memory cells and the transmission gates respectively, each of the transfer means and functioning to transfer the complementary signal outputs, of a corresponding memory cell to a control electrode of a corresponding transmission gate; wherein each of said transfer means includes a transfer element, and when the outputs of the corresponding memory cell switch on the corresponding transmission gate, the transfer element separates the corresponding memory cell from a corresponding field effect transistor in the corresponding transmission gate in the transfer path of at least one complementary signal output of the corresponding memory cell while maintaining the field effect transistor in an on-state.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-30 | 2000-01-29 | 2000-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-30 | 2004-01-29 | 2004-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-30 | 2008-01-29 | 2008-07-30 | $7700.00 | Window Closed / Lapsed |