Device and method of manufacturing the same and semiconductor device and method of manufacturing the same

Claim 2

A semiconductor device having a transistor, comprising: a first semiconductor region constituted by a semiconductor material doped to have a first conductivity type; a second semiconductor region constituted by a semiconductor material doped to have a second conductivity-type different from the first conductivity-type and provided on said first semiconductor region; an electrode region provided on both sides of said second semiconductor region and being connected to said first semiconductor region; and an insulating film covering a surface of said electrode region and insulating said electrode region from said second semiconductor region, wherein said electrode region comprises a layer of aluminum and wherein said insulating film is an aluminum fluoride.

Claim 3

A semiconductor device according to claim 1, wherein said first semiconductor region is a base and said second semiconductor region is an emitter.

Claim 4

A semiconductor device according to claim 1, wherein said electrode region comprises said conductive material layer and an additional conductive layer between said conductive material layer and said first semiconductor region.

Claim 5

A semiconductor device having a transistor, comprising: a first semiconductor region constituted by a semiconductor material doped to have a first conductivity type; a second semiconductor region constituted by a semiconductor material doped to have a second conductivity-type different from the first conductivity-type and provided on said first semiconductor region; an electrode region provided on both sides of said second semiconductor region and being connected to said first semiconductor region; and an insulating film covering a surface of said electrode region from said second semiconductor region, wherein said electrode region comprises a layer of aluminum, and wherein said insulating film is an aluminum fluoride wherein said electrode region comprises said conductive material layer and an additional conductive layer between said conductive material layer and said first semiconductor region, and wherein said additional conductive layer is formed of Mo or W.

Claim 6

A semiconductor device having a transistor, comprising: a first semiconductor region constituted by a semiconductor material doped to have a first conductivity type; a second semiconductor region constituted by a semiconductor material doped to have a second conductivity-type different from the first conductivity-type and provided on said first semiconductor region; an electrode region provided on both sides of said second semiconductor region and being connected to said first semiconductor region; and an insulating film covering a surface of said electrode region from said second semiconductor region, wherein said electrode region comprises a layer of aluminum, and wherein said insulating film is an aluminum fluoride wherein said electrode region comprises said conductive material layer and an additional conductive layer between said conductive material layer and said first semiconductor region, and wherein said additional conductive layer is formed of Mo or W.

Claim 7

A semiconductor device, having a transistor, comprising: a first semiconductor region constituted by a semiconductor material doped to have a first conductivity-type; a second semiconductor region constituted by the semiconductor material doped to have a second conductivity-type different form the first conductivity-type and provided on said first semiconductor region; an electrode region provided on both sides of said second semiconductor region and being connected to said first semiconductor region; and an insulating film covering a surface of said electrode region and insulating said electrode region from said second semiconductor region, wherein said electrode region comprises a layer of aluminum, and wherein said insulating film is aluminum fluoride wherein said electrode region comprises said conductive material layer and an additional conductive layer between said conductive material layer and said first semiconductor region, and wherein said additional conductive layer is formed of a material selected from Ti, Ni, TaSi 2 , and TiSi 2 .

Claim 8

A semiconductor device, having a transistor, comprising: a first semiconductor region constituted by a semiconductor material doped to have a first conductivity-type; a second semiconductor region constituted by the semiconductor material doped to have a second conductivity-type different form the first conductivity-type and provided on said first semiconductor region; an electrode region provided on both sides of said second semiconductor region and being connected to said first semiconductor region; and an insulating film covering a surface of said electrode region and insulating said electrode region from said second semiconductor region, wherein said electrode region comprises a layer of aluminum, and wherein said insulating film is aluminum fluoride wherein said electrode region comprises said conductive material layer and an additional conductive layer between said conductive material layer and said first semiconductor region, and wherein said additional conductive layer is formed of a material selected from Ti, Ni, TaSi 2 , and TiSi 2 .

Claim 9

A semiconductor device, having a transistor, comprising: a first semiconductor region constituted by a semiconductor material doped to have a first conductivity-type; a second semiconductor region constituted by the semiconductor material doped to have a second conductivity-type different from the first conductivity-type and provided on said first semiconductor region; an electrode region provided on both sides of said second semiconductor region and being connected to said first semiconductor region; and an insulating film covering a surface of said electrode region and insulating said electrode region from said second semiconductor region, wherein said electrode region comprises a layer of conductive material different from the semiconductor material constituting said first and second semiconductor regions, and wherein said insulating film is a compound film formed by a surface reaction of said conductive material wherein said electrode region comprises said conductive material layer and an additional conductive layer between said conductive material layer and said first semiconductor region, and wherein said electrode region comprises, as said conductive material layer, Ni, Cr or Fe, and comprises, as said additional conductive layer, W or Ti.

Claim 10

A semiconductor device, having a transistor, comprising: a first semiconductor region constituted by a semiconductor material doped to have a first conductivity-type; a second semiconductor region constituted by the semiconductor material doped to have a second conductivity-type different from the first conductivity-type and provided on said first semiconductor region; an electrode region provided on both sides of said second semiconductor region and being connected to said first semiconductor region; and an insulating film covering a surface of said electrode region and insulating said electrode region from said second semiconductor region, wherein said electrode region comprises a layer of conductive material different from the semiconductor material constituting said first and second semiconductor regions, and wherein said insulating film is a compound film formed by a surface reaction of said conductive material wherein said electrode region comprises said conductive material layer and an additional conductive layer between said conductive material layer and said first semiconductor region, and wherein said electrode region comprises, as said conductive material layer, Ni, Cr or Fe, and comprises, as said additional conductive layer, W or Ti.

Claim 11

A semiconductor device according to claim 1, wherein said compound film is formed of an oxide or a fluoride.

Claim 12

A semiconductor device having a transistor, comprising: a gate electrode; a semiconductor body having a surface and providing a channel region of a first conductivity-type; a gate insulating film provided on said surface of said body; source and drain regions of a second conductivity type different from that of said channel region and provided on both sides of said gate insulating film; conductive layers provided respectively on said source and drain regions; and an insulating film covering said conductive layers and insulating said gate electrode from said conductive layers on said source and drain regions, wherein said conductive layers are formed of aluminum and said insulating film is aluminum fluoride.

Claim 13

A semiconductor device having a transistor, comprising: a gate electrode; a semiconductor body having a surface and providing a channel region of a first conductivity-type; a gate insulating film provided on said surface of said body; source and drain regions of a second conductivity type different from that of said channel region and provided on both sides of said gate insulating film; conductive layers provided respectively on said source and drain regions; and an insulating film covering said conductive layers and insulating said gate electrode from said conductive layers on said source and drain regions, wherein said conductive layers are formed of aluminum and said insulating film is aluminum fluoride.