Patent US1892464A successfully refreshed from Google Patents.
Patent FR2073318B1 successfully refreshed from Google Patents.
← Back to Patent Explorer
US5541007A Expired / Lapsed US ⏱️ 0.0 years remaining

Aluminum alloy wiring layer and aluminum alloy sputtering target

Assignee: Ryoka Matthey Corp
•
Filing: 1994-07-19
•
Granted: 1996-07-30
•
Expires: 2014-07-19
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract An aluminum alloy wiring layer comprising 0.01 to 1.0 wt. % of scandium, or 0.01 to 1.0 wt. % of scandium and 0.01 to 3.0 wt. % of at least one element selected from the group consisting of silicon, titanium, copper, boron, hafnium and rare-earth elements other than scandium, and the balance aluminum having a purity of not less than 99.99%. A process for producing the same and an aluminum alloy sputtering target used therefor are also disclosed. The aluminum alloy wiring layer of the present invention is suitable as an advanced large-scale integrated circuit.

Inventors

  • 👤 Tadao Ueda
  • 👤 Kazunari Takemura

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 01:40
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; C; C22; C22C; C22C21/00; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12736

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 117 words
An aluminum alloy wiring layer consisting essentially of 0.01 to 1.0 wt % of scandium and the balance aluminum having a purity of not less than 99.99%, obtained by sputtering an aluminum alloy target produced by the steps of heating an alloy consisting essentially of 0.01 to 1.0 wt % of scandium and the balance aluminum having a purity of not less than 99.99% at 500° to 550° C. for 10 to 15 hours, subjecting the heated alloy to rolling treatment at a reduction ratio of 50 to 90%, heating the rolled alloy at 400° to 450° C. for 30 to 60 minutes, and cutting the alloy into a shape suitable for use in a sputtering apparatus.
Claim 2
Dependent Claim 117 words
An aluminum alloy wiring layer consisting essentially of 0.01 to 1.0 wt % of scandium and the balance aluminum having a purity of not less than 99.99%, obtained by sputtering an aluminum alloy target produced by the steps of heating an alloy consisting essentially of 0.01 to 1.0 wt % of scandium and the balance aluminum having a purity of not less than 99.99% at 500° to 550° C. for 10 to 15 hours, subjecting the heated alloy to rolling treatment at a reduction ratio of 50 to 90%, heating the rolled alloy at 400° to 450° C. for 30 to 60 minutes, and cutting the alloy into a shape suitable for use in a sputtering apparatus.
Claim 3
Dependent Claim 19 words
An aluminum alloy wiring layer according to claim 1, wherein the scandium content is 0.05 to 0.6 wt. %.
Claim 4
Dependent Claim 144 words
An aluminum alloy wiring layer consisting essentially of 0.01 to 1.0 wt. % of scandium, 0.01 to 3.0 wt. % of at least one element selected from the group consisting of silicon, titanium, copper, boron, hafnium and rare-earth elements other than scandium, and the balance aluminum having a purity of not less than 99.99%, obtained by sputtering an aluminum alloy target produced by the steps of heating an alloy consisting essentially of 0.01 to 1.0 wt. % of scandium and the balance aluminum having a purity of not less than 99.99% at 500° to 550° C. for 10 to 15 hours, subjecting the heated alloy to rolling treatment at a reduction ratio of 50 to 90%, heated the rolled alloy at 400° to 450° C. for 30 to 60 minutes, and cutting the alloy into a shape suitable for use in a sputtering apparatus.
Claim 5
Dependent Claim 144 words
An aluminum alloy wiring layer consisting essentially of 0.01 to 1.0 wt. % of scandium, 0.01 to 3.0 wt. % of at least one element selected from the group consisting of silicon, titanium, copper, boron, hafnium and rare-earth elements other than scandium, and the balance aluminum having a purity of not less than 99.99%, obtained by sputtering an aluminum alloy target produced by the steps of heating an alloy consisting essentially of 0.01 to 1.0 wt. % of scandium and the balance aluminum having a purity of not less than 99.99% at 500° to 550° C. for 10 to 15 hours, subjecting the heated alloy to rolling treatment at a reduction ratio of 50 to 90%, heated the rolled alloy at 400° to 450° C. for 30 to 60 minutes, and cutting the alloy into a shape suitable for use in a sputtering apparatus.
Claim 6
Dependent Claim 19 words
An aluminum alloy wiring layer according to claim 3, wherein the scandium content is 0.05 to 0.6 wt. %.
Claim 7
Dependent Claim 128 words
An aluminum alloy sputtering target consisting essentially of 0.01 to 1.0 wt. % of scandium and the balance aluminum having a purity of not less than 99.99%, and having an average grain size of 0.1 to 0.5 mm, obtained by sputtering an aluminum alloy target produced by the steps of heating an alloy consisting essentially of 0.01 to 1.0 wt. % of scandium and the balance aluminum having a purity of not less than 99.99% at 500° to 550° C. for 10 to 15 hours, subjecting the heated alloy to rolling treatment at a reduction ratio of 50 to 90%, heating the rolled alloy at 400° to 450° C. for 30 to 60 minutes, and cutting the alloy into a shape suitable for use in a sputtering apparatus.
Claim 8
Dependent Claim 128 words
An aluminum alloy sputtering target consisting essentially of 0.01 to 1.0 wt. % of scandium and the balance aluminum having a purity of not less than 99.99%, and having an average grain size of 0.1 to 0.5 mm, obtained by sputtering an aluminum alloy target produced by the steps of heating an alloy consisting essentially of 0.01 to 1.0 wt. % of scandium and the balance aluminum having a purity of not less than 99.99% at 500° to 550° C. for 10 to 15 hours, subjecting the heated alloy to rolling treatment at a reduction ratio of 50 to 90%, heating the rolled alloy at 400° to 450° C. for 30 to 60 minutes, and cutting the alloy into a shape suitable for use in a sputtering apparatus.
Claim 9
Dependent Claim 19 words
An aluminum alloy sputtering target according to claim 5, wherein the scandium content is 0.05 to 0.6 wt. %.
Claim 10
Dependent Claim 143 words
An aluminum alloy sputtering target consisting essentially of 0.01 to 1.0 wt. % of scandium, 0.01 to 3.0 wt. % of at least one element selected from the group consisting of silicon, titanium, copper, boron, hafnium and rare-earth elements other than scandium, and the balance aluminum having a purity of not less than 99.99%, obtained by sputtering an aluminum alloy target produced by the steps of heating an alloy consisting essentially of 0.01 to 1.0 wt. % of scandium and the balance aluminum having a purity of not less than 99.99% at 500° to 550° C. for 10 to 15 hours, subjecting the heated alloy to rolling-treatment at a reduction ratio of 50 to 90%, heating the rolled alloy at 400° to 450° C. for 30 to 60 minutes, and cutting the alloy into a shape suitable for use in a sputtering apparatus.
Claim 11
Dependent Claim 143 words
An aluminum alloy sputtering target consisting essentially of 0.01 to 1.0 wt. % of scandium, 0.01 to 3.0 wt. % of at least one element selected from the group consisting of silicon, titanium, copper, boron, hafnium and rare-earth elements other than scandium, and the balance aluminum having a purity of not less than 99.99%, obtained by sputtering an aluminum alloy target produced by the steps of heating an alloy consisting essentially of 0.01 to 1.0 wt. % of scandium and the balance aluminum having a purity of not less than 99.99% at 500° to 550° C. for 10 to 15 hours, subjecting the heated alloy to rolling-treatment at a reduction ratio of 50 to 90%, heating the rolled alloy at 400° to 450° C. for 30 to 60 minutes, and cutting the alloy into a shape suitable for use in a sputtering apparatus.
Claim 12
Dependent Claim 19 words
An aluminum alloy sputtering target according to claim 7, wherein the scandium content is 0.05 to 0.6 wt. %.

References Cited (Backward Citations)

US3619181A Cited
US4080223A Cited
JPS5252585A Cited
US4154874A Cited
US4874440A Cited
EP0249256A2 Cited
JPH01289140A Cited
US5133931A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-07-30 2000-01-29 2000-07-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-07-30 2004-01-29 2004-07-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-07-30 2008-01-29 2008-07-30 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag