Patent DE692773C successfully refreshed from Google Patents.
EP0249256A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A semiconductor device with an aluminium interconnect layer containing a small percentage of vanadium
Assignee: Koninklijke Philips NV
•
Filing: 1987-04-06
•
Granted: —
•
Expires: 2007-04-06
Abstract
Abstract An electrical interconnect layer (10) lying in a body (12) such as a semiconductor device consists of aluminium with a small fraction of vanadium, the percentage of vanadium (from 0,01 to 0,3% by weight) being so low that the vanadium substantially forms a single-phase crystal structure with the aluminium. The structure is formed by depositing a layer (20) of aluminium and vanadium on the body after which patterning and annealing steps are performed. The small amount of vanadium in the interconnect substantially improves its electromigration resistance, while the layer can be plasma etched.
Inventors
- 👤 Albertus Gerhardus Dirks
- 👤 Janet Maureen Towner
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 22:12
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
51 words
A structure, such as a semiconductor device, in which a patterned electrically conductive layer consisting substantially of aluminium with a small percentage of vanadium lies on a surface of a body, characterized in that the layer contains 0,01 - 0,3% vanadium by weight which is distributed substantially uniformly throughout the layer.
Claim 2
Dependent Claim
51 words
A structure, such as a semiconductor device, in which a patterned electrically conductive layer consisting substantially of aluminium with a small percentage of vanadium lies on a surface of a body, characterized in that the layer contains 0,01 - 0,3% vanadium by weight which is distributed substantially uniformly throughout the layer.
Claim 3
Dependent Claim
19 words
A structure as in Claim 1, characterized in that the layer contains no more than 0,13% vanadium by weight.
Claim 4
Dependent Claim
20 words
A structure as in Claim 1 or 2, characterized in that the layer contains up to 4% silicon by weight.
Claim 5
Independent Claim
72 words
A method in which an electrically conductive layer consisting substantially of aluminium with a small percentage of vanadium is deposited on a surface of a body, such as a semiconductor body, after which the layer is patterned and annealed, characterized in that the layer is deposited in such a way that the layer as it is deposited contains 0,01 - 0,3% vanadium by weight which is distributed substantially uniformly throughout the layer.
Claim 6
Independent Claim
72 words
A method in which an electrically conductive layer consisting substantially of aluminium with a small percentage of vanadium is deposited on a surface of a body, such as a semiconductor body, after which the layer is patterned and annealed, characterized in that the layer is deposited in such a way that the layer as it is deposited contains 0,01 - 0,3% vanadium by weight which is distributed substantially uniformly throughout the layer.
Claim 7
Dependent Claim
28 words
A method as in Claim 4, characterized in that the layer is deposited onto the surface of the body in a chamber at a pressure below 2,5 Pa.
Claim 8
Dependent Claim
15 words
A method as in Claim 5, characterized in that the layer is deposited by sputtering.
Claim 9
Dependent Claim
26 words
A method as in Claim 4, 5 or 6, characterized in that the layer is annealed at a temperature in the range from 400°C to 500°C
Claim 10
Independent Claim
28 words
A method as in Claims 4, 5, 6 or 7, characterized in that annealing is performed for a time in the range from 10 minutes to 480 minutes.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.