Microdevice with ferroelectric for sensing or applying a force

Claim 2

A microdevice formed integral to an integrated circuit chip for generating a force or mechanical movement comprising: a ferroelectric thin film ceramic having a thickness between about 0.1 and 10 micrometers, said thin film presenting a surface upon which said force is generated and being adaptable for deflective movement in response to the application of an electric field; first and second electrodes positioned on opposite sides of said ferroelectric thin film ceramic, each of said electrodes having an inner surface in operable contact with said ferroelectric ceramic thin film; an electrically insulating thin film surrounding said ferroelectric ceramic thin film and being disposed between said first and Second electrodes and said ferroelectric ceramic thin film; structural supporting material formed of additional deposited thin film material; and electrical connection means for electrically connecting said first and second electrodes to a power supply.

Claim 3

A microdevice formed integral to an integrated circuit chip for generating a force or mechanical movement comprising: a ferroelectric thin film ceramic having a thickness between about 0.1 and 10 micrometers, said thin film presenting a surface upon which said force is generated and being adaptable for deflective movement in response to the application of an electric field; first and second electrodes positioned on opposite sides of said ferroelectric thin film ceramic, each of said electrodes having an inner surface in operable contact with said ferroelectric ceramic thin film; structural supporting material formed of additional deposited thin film material; and electrical connection means for electrically connecting said first and second electrodes to a power supply, wherein said ferroelectric thin film ceramic is an integral part of a microvalve which when electrically actuated is adapted to selectively open and close an orifice, constrict and open a fluid passage-way, and establish and break an electrical interconnection.

Claim 4

A microdevice formed integral to an integrated circuit chip for generating a force or mechanical movement comprising: a ferroelectric thin film ceramic having a thickness between about 0.1 and 10 micrometers, said thin film presenting a surface upon which said force is generated and being adaptable for deflective movement in response to the application of an electric field; first and second electrodes positioned on opposite sides of said ferroelectric thin film ceramic, each of said electrodes having an inner surface in operable contact with said ferroelectric ceramic thin film; structural supporting material formed of additional deposited thin film material; and electrical connection means for electrically connecting said first and second electrodes to a power supply, wherein said ferroelectric thin film ceramic is an integral part of a microvalve which when electrically actuated is adapted to selectively open and close an orifice, constrict and open a fluid passage-way, and establish and break an electrical interconnection.

Claim 5

A microdevice formed integral to an integrated circuit chip for generating a force or mechanical movement comprising: a ferroelectric thin film ceramic having a thickness between about 0.1 and 10 micrometers, said thin film presenting a surface upon which said force is generated and being adaptable for deflective movement in response to the application of an electric field; first and second electrodes positioned on opposite sides of said ferroelectric thin film ceramic, each of said electrodes having an inner surface in operable contact with said ferroelectric ceramic thin film; structural supporting material formed of additional deposited thin film material; and electrical connection means for electrically connecting said first and second electrodes to a power supply, wherein the ferroelectric ceramic material has a Perovskite crystalline structure and is selected from the group consisting of: lead-zirconate titanate (PZT), lead titanate (PbTiO 3 ), lanthanum-doped or lanthanum-modified PZT (PLZT), lead-zirconate (PbZrO 3 ), lanthanum-doped or lanthanum-modified lead-titanate (PLT), and neodymium-doped PZT (PNZT), lithium niobate (LiNbO 3 ), lithium tantalate (LITaO 3 ), and wherein the incident heat is detected via the pyroelectric effect which exists in said ferroelectric thin film ceramic materials and the structural support is fabricated directly above a transistor or transistor circuit located on the surface of a semiconductor wafer.

Claim 6

A microdevice formed integral to an integrated circuit chip for generating a force or mechanical movement comprising: a ferroelectric thin film ceramic having a thickness between about 0.1 and 10 micrometers, said thin film presenting a surface upon which said force is generated and being adaptable for deflective movement in response to the application of an electric field; first and second electrodes positioned on opposite sides of said ferroelectric thin film ceramic, each of said electrodes having an inner surface in operable contact with said ferroelectric ceramic thin film; structural supporting material formed of additional deposited thin film material; and electrical connection means for electrically connecting said first and second electrodes to a power supply, wherein the ferroelectric ceramic material has a Perovskite crystalline structure and is selected from the group consisting of: lead-zirconate titanate (PZT), lead titanate (PbTiO 3 ), lanthanum-doped or lanthanum-modified PZT (PLZT), lead-zirconate (PbZrO 3 ), lanthanum-doped or lanthanum-modified lead-titanate (PLT), and neodymium-doped PZT (PNZT), lithium niobate (LiNbO 3 ), lithium tantalate (LITaO 3 ), and wherein the incident heat is detected via the pyroelectric effect which exists in said ferroelectric thin film ceramic materials and the structural support is fabricated directly above a transistor or transistor circuit located on the surface of a semiconductor wafer.

Claim 7

A microdevice formed integral to an integrated circuit chip for generating a force or mechanical movement comprising: a ferroelectric thin film ceramic having a thickness between about 0.1 and 10 micrometers, said thin film presenting a surface upon which said force is generated and being adaptable for deflective movement in response to the application of an electric field; first and second electrodes positioned on opposite sides of said ferroelectric thin film ceramic, each of said electrodes having an inner surface in operable contact with said ferroelectric ceramic thin film; structural supporting material formed of additional deposited thin film material; and electrical connection means for electrically connecting said first and second electrodes to a power supply, wherein silicon nitride is employed as a chemical encapsulation material for said ferroelectric thin film.

Claim 8

A microdevice formed integral to an integrated circuit chip for generating a force or mechanical movement comprising: a ferroelectric thin film ceramic having a thickness between about 0.1 and 10 micrometers, said thin film presenting a surface upon which said force is generated and being adaptable for deflective movement in response to the application of an electric field; first and second electrodes positioned on opposite sides of said ferroelectric thin film ceramic, each of said electrodes having an inner surface in operable contact with said ferroelectric ceramic thin film; structural supporting material formed of additional deposited thin film material; and electrical connection means for electrically connecting said first and second electrodes to a power supply, wherein silicon nitride is employed as a chemical encapsulation material for said ferroelectric thin film.