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US5536669A
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US
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Method for fabricating read-only-memory devices with self-aligned code implants
Assignee: United Microelectronics Corp
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Filing: 1995-07-26
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Granted: 1996-07-16
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Expires: 2015-07-26
Abstract
Abstract A method for fabricating ROM devices with self-aligned code implants comprises the steps of: forming an oxide layer over a silicon substrate; forming a plurality of deposition selecting strips over the oxide layer; forming a dielectric between the plurality of deposition selecting strips to thereby produce a plurality of dielectric strips; removing the deposition selecting strips; forming a number of code diffusion regions in the silicon substrate; and forming a plurality of word lines between the plurality of dielectric strips. Since the code diffusion regions are formed by implanting ions through the dielectric strips, the shielding of the dielectric strips can prevent the outspreading of impurities due to code mask mis-alignment. Therefore, the positions of code diffusion regions can be well controlled beneath the word lines.
Inventors
- 👤 Kuan-Cheng Su
- 👤 Yi-Chung Sheng
- 👤 Chen-Hui Chung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:56
CPC Classifications
H; H10; H10B; H10B20/00; H10B20/27; H10B20/30; H10B20/38
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
91 words
A method for fabricating read-only-memory (ROM) devices on a silicon substrate, comprising the steps of: forming an oxide layer over said silicon substrate; forming a plurality of bit lines in said silicon substrate; forming a plurality of deposition selecting strips over said oxide layer; forming a dielectric between said plurality of deposition selecting strips to thereby produce a plurality of dielectric strips; removing said deposition selecting strips; forming a number of code diffusion regions in said silicon substrate; and forming a plurality of word lines between said plurality of dielectric strips.
Claim 2
Independent Claim
91 words
A method for fabricating read-only-memory (ROM) devices on a silicon substrate, comprising the steps of: forming an oxide layer over said silicon substrate; forming a plurality of bit lines in said silicon substrate; forming a plurality of deposition selecting strips over said oxide layer; forming a dielectric between said plurality of deposition selecting strips to thereby produce a plurality of dielectric strips; removing said deposition selecting strips; forming a number of code diffusion regions in said silicon substrate; and forming a plurality of word lines between said plurality of dielectric strips.
Claim 3
Dependent Claim
17 words
The method of claim 1, wherein said dielectric strips are formed by liquid-phase deposition of silicon dioxide.
Claim 4
Dependent Claim
14 words
The method of claim 1, wherein said deposition selecting strips are formed by photoresist.
Claim 5
Dependent Claim
11 words
The method of claim 1, wherein said word lines are polysilicon.
Claim 6
Dependent Claim
35 words
The method of claim 4, wherein said word lines are formed by depositing a polysilicon layer over said oxide layer and said dielectric trips; and etching back said polysilicon layer to form the word lines.
Claim 7
Dependent Claim
23 words
The method of claim 1, wherein said code diffusion regions are formed by implanting ions into said silicon substrate through a code mask.
Claim 8
Dependent Claim
14 words
The method of claim 5, wherein said silicon substrate is a P-type silicon substrate.
Claim 9
Dependent Claim
19 words
The method of claim 6, wherein said code diffusion regions are formed by implanting P-type ions into said substrate.
Claim 10
Dependent Claim
12 words
The method of claim 6, wherein said P-type ions are boron ions.
Claim 11
Dependent Claim
18 words
The method of claim 1, wherein said bit lines are formed by implanting ions into said silicon substrate.
Claim 12
Dependent Claim
17 words
The method of claim 1, wherein said deposition selecting strips have a thickness between 10K and 20KÅ.
Claim 13
Dependent Claim
17 words
The method of claim 1, wherein said dielectric strips have a thickness between 1500 and 5000 Å.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-16 | 2000-01-15 | 2000-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-16 | 2004-01-15 | 2004-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-16 | 2008-01-15 | 2008-07-16 | $7700.00 | Window Closed / Lapsed |