Patent US5536602A successfully refreshed from Google Patents.
US5536602A
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US
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Phase shifting mask, manufacturing method thereof, and exposure method using such a phase shifting mask
Assignee: Renesas Electronics Corp
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Filing: 1994-08-30
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Granted: 1996-07-16
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Expires: 2014-08-30
Abstract
Abstract A quartz substrate includes a first light transmitting portion and a second light transmitting portion which transmit exposure light. The first and second light transmitting portions are formed such that exposure light transmitted through respective light transmitting portions are 180° out of phase with each other. A semi-light shielding film is located between first and second light transmitting portion and formed in a part of first and second light transmitting portions. Also, semi-light shielding film has transmittance of at least 3% and not more than 30%.
Inventors
- 👤 Shuji Nakao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:38
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/30; H; H10; H10P; H10P76/00; G03F1/32; G03F7/00; G03F7/70; G03F7/70058; G03F7/70216; G03F7/70283
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
192 words
A phase shifting mask, comprising: a substrate including a first light transmitting portion which transmits exposure light, and a second light transmitting portion which is located adjacent to said first light transmitting portion and transmits exposure light to have a different phase from that of the exposure light transmitted through said first light transmitting portion; and a semi-light shielding film which is located at an interface between said adjacent first and second light transmitting portions and is formed in a part of said first and the second light transmitting portions, wherein said first light transmitting portion includes a first transmitting region and a first attenuated transmitting region in which said semi-light shielding film is formed, light intensity of exposure light transmitted through said first transmitting region is greater than that of the exposure light transmitted through said first attenuated transmitting region, said second light transmitting portion includes a second transmitting region and a second attenuated transmitting region in which said semi-light shielding film is formed, and light intensity of exposure light transmitted through said second transmitting region is greater than that of the exposure light transmitted through said second attenuated transmitting region.
Claim 2
Dependent Claim
192 words
A phase shifting mask, comprising: a substrate including a first light transmitting portion which transmits exposure light, and a second light transmitting portion which is located adjacent to said first light transmitting portion and transmits exposure light to have a different phase from that of the exposure light transmitted through said first light transmitting portion; and a semi-light shielding film which is located at an interface between said adjacent first and second light transmitting portions and is formed in a part of said first and the second light transmitting portions, wherein said first light transmitting portion includes a first transmitting region and a first attenuated transmitting region in which said semi-light shielding film is formed, light intensity of exposure light transmitted through said first transmitting region is greater than that of the exposure light transmitted through said first attenuated transmitting region, said second light transmitting portion includes a second transmitting region and a second attenuated transmitting region in which said semi-light shielding film is formed, and light intensity of exposure light transmitted through said second transmitting region is greater than that of the exposure light transmitted through said second attenuated transmitting region.
Claim 3
Dependent Claim
65 words
The phase shifting mask according to claim 1, wherein said substrate has a stepped portion having a predetermined height which is formed by a surface of said first light transmitting portion and a surface of said second light transmitting portion, said semi-light shielding film covers said stepped portion of the substrate, and a sidewall of said stepped portion of the substrate has a round shape.
Claim 4
Dependent Claim
78 words
The phase shifting mask according to claim 2, further comprising a first film formed on said substrate and a second film formed on said first film and made of a material having a faster etching rate than that of said first film, and the surface of said first light transmitting portion is formed by a surface of said second film, and the surface of said second light transmitting portion is formed by a surface of said first film.
Claim 5
Dependent Claim
28 words
The phase shifting mask according to claim 2, wherein the round sidewall has a radius of curvature which is substantially equal to a height of said stepped portion.
Claim 6
Dependent Claim
17 words
The phase shifting mask according to claim 2, wherein said round sidewall is formed by wet etching.
Claim 7
Dependent Claim
45 words
The phase shifting mask according to claim 1, wherein said semi-light shielding film is formed such that a phase of exposure light before transmitting through said semi-light shielding film is substantially equal to a phase of exposure light after transmitting through said semi-light shielding film.
Claim 8
Dependent Claim
37 words
The phase shifting mask according to claim 1, wherein a material of said semi-light shielding film includes chromium, and a thickness of said semi-light shielding film is at least 100 Å and not more than 300 Å.
Claim 9
Dependent Claim
44 words
The phase shifting mask according to claim 1, wherein a width S of said semi-light shielding film has a range defined by the following formula: S≦2λ×n; wherein λ is the wavelength of the light and n is a magnification of the projection optical system.
Claim 10
Dependent Claim
25 words
The phase shifting mask according to claim 1, wherein said semi-light shielding film has a transmittance of at least 3% and not more than 30%.
Claim 11
Dependent Claim
102 words
A phase shifting mask, comprising: a substrate including a first light transmitting portion which transmits exposure light, and a second light transmitting portion which transmits exposure light to have a different phase from that of the exposure light transmitted through said first light transmitting portion, surfaces of said first and second light transmitting portions forming a stepped portion having a predetermined height; and a light shielding film which covers the stepped portion of said substrate and exposes a predetermined region of said first and second light transmitting portions, wherein a sidewall of the stepped portion of said substrate has a round shape.
Claim 12
Dependent Claim
102 words
A phase shifting mask, comprising: a substrate including a first light transmitting portion which transmits exposure light, and a second light transmitting portion which transmits exposure light to have a different phase from that of the exposure light transmitted through said first light transmitting portion, surfaces of said first and second light transmitting portions forming a stepped portion having a predetermined height; and a light shielding film which covers the stepped portion of said substrate and exposes a predetermined region of said first and second light transmitting portions, wherein a sidewall of the stepped portion of said substrate has a round shape.
Claim 13
Dependent Claim
78 words
The phase shifting mask according to claim 10, further comprising a first film formed on said substrate and a second film formed on said first film and made of a material having a faster etching rate than that of said first film, and the surface of said first light transmitting portion is formed by a surface of said second film and the surface of said second light transmitting portion is formed by a surface of said first film.
Claim 14
Dependent Claim
30 words
The phase shifting mask according to claim 10, wherein a material of said light shielding film includes chromium, and a thickness of said light shielding film is substantially 1000 Å.
Claim 15
Dependent Claim
28 words
The phase shifting mask according to claim 10, wherein the round sidewall has a radius of curvature which is substantially equal to a height of said stepped portion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-16 | 2000-01-15 | 2000-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-16 | 2004-01-15 | 2004-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-16 | 2008-01-15 | 2008-07-16 | $7700.00 | Window Closed / Lapsed |