US5534714A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated field effect transistor and resonant tunneling diode
Assignee: Texas Instruments Inc
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Filing: 1994-11-23
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Granted: 1996-07-09
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Expires: 2014-11-23
Abstract
Abstract This is an integrated device which comprises an integrated transistor and resonant tunneling diode where the transistor comprises a substrate 10, a buffer layer 12 over the substrate 10, and a channel layer 14 over the buffer layer 12; and the resonant tunneling diode (RTD) comprises a first contact layer 18, a first tunnel barrier layer 20 over the first contact layer 18, a quantum well 22 over the first tunnel barrier layer 20, a second tunnel barrier layer 24 over the quantum well 22, and a second contact layer 26 over the second tunnel barrier layer 24. Other devices and methods are also disclosed.
Inventors
- 👤 Edward A. Beam, III
- 👤 Alan C. Seabaugh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:53
CPC Classifications
B; B82; B82Y; B82Y30/00; H; H10; H10D; H10D84/00; H10D84/01; B82Y10/00; H10B; H10B10/00; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D84/0123; H10D84/0126; H10D84/0158; H10D84/02; H10D84/05; Y; Y10; Y10S; Y10S438/00; Y10S438/979
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
88 words
An integrated device comprising: a transistor comprising: a substrate; a buffer layer over said substrate; and a channel layer over said buffer layer; a resonant tunneling diode (RTD) comprising: a first contact layer abutting a sidewall of said transistor; a first tunnel barrier layer over said first contact layer; a quantum well layer over said first tunnel barrier layer; a second tunnel barrier layer over said quantum well layer; and a second contact layer over said second tunnel barrier layer; wherein said transistor and said RTD are integrated.
Claim 2
Dependent Claim
88 words
An integrated device comprising: a transistor comprising: a substrate; a buffer layer over said substrate; and a channel layer over said buffer layer; a resonant tunneling diode (RTD) comprising: a first contact layer abutting a sidewall of said transistor; a first tunnel barrier layer over said first contact layer; a quantum well layer over said first tunnel barrier layer; a second tunnel barrier layer over said quantum well layer; and a second contact layer over said second tunnel barrier layer; wherein said transistor and said RTD are integrated.
Claim 3
Dependent Claim
13 words
The device of claim 1, wherein said transistor is a Field Effect Transistor.
Claim 4
Dependent Claim
13 words
The device of claim 1, wherein said transistor is a mesa defined structure.
Claim 5
Dependent Claim
14 words
The device of claim 1, further comprising an insulating layer over said channel layer.
Claim 6
Dependent Claim
12 words
The device of claim 1, wherein said device is of III-V materials.
Claim 7
Dependent Claim
11 words
The device of claim 1, wherein said device comprises multiple RTDs.
Claim 8
Dependent Claim
15 words
The device of claim 6, wherein said RTDs are on multiple sidewalls of said transistor.
Claim 9
Dependent Claim
10 words
The device of claim 6, wherein said RTDs are stacked.
References Cited (Backward Citations)
US4814836A
Cited
US5428224A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-09 | 2000-01-08 | 2000-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-09 | 2004-01-08 | 2004-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-09 | 2008-01-08 | 2008-07-09 | $7700.00 | Window Closed / Lapsed |