FET photoconductor with a heterojunction in the channel

Claim 2

A photoconductor including a channel region of a first semiconductor material having a first conductivity type in which electron-hole pairs are created in response to the incidence of optical radiation thereat, a gate of a second conductivity type associated with and forming a p-n junction with the channel region and a region of a second semiconductor material forming an abrupt heterojunction in the channel region separated from said p-n junction which serves to cause the accumulation of carriers of the lower mobility type and to control their release to said gate in response to the potential applied to said gate; said photoconductor including two electrical contacts to the channel region, one of which is biased more positively than the other, the gate being associated with the channel region between the two contacts; and said photoconductor being in the form of an inverted HEMT photoFET comprising a substrate of semi-insulating InP, a layer of p InP on a surface of the substrate, a layer of n + on the p InP layer, a substantially undoped layer of GaInAs on the n + InP layer and partially comprising said channel region, the two electrical contacts being spaced apart on a surface of the GaInAs layer, a region of n - InP also comprising the channel region and extending into the GaInAs layer from the surface thereof between the two contacts, and the gate comprising a p InP region in contact with the n - InP region.

Claim 3

A photoconductor including a channel region of a first semiconductor material having a first conductivity type in which electron-hole pairs are created in response to the incidence of optical radiation thereat, a gate of a second conductivity type associated with and forming a p-n junction with the channel region and a region of a second semiconductor material forming an abrupt heterojunction in the channel region separated from said p-n junction which serves to cause the accumulation of carriers of the lower mobility type and to control their release to said gate in response to the potential applied to said gate; said photoconductor including two electrical contacts to the channel region, one of which is biased more positively than the other, the gate being associated with the channel region between the two contacts; and said photoconductor being in the form of an embedded gate photoFET comprising a substrate of semi-insulating InP into a surface of which extends a p InP region comprising said gate, a layer of n InP disposed on said surface and over and in contact with the p InP region an n GaInAs layer disposed on the n InP layer, the n GaInAs and n InP layers together comprising the channel region the two electrical contacts being spaced apart on a surface of the n GaInAs layer.

Claim 4

A photoconductor including a channel region of a first semiconductor material having a first conductivity type in which electron-hole pairs are created in response to the incidence of optical radiation thereat, a gate of a second conductivity type associated with and forming a p-n junction with the channel region and a region of a second semiconductor material forming an abrupt heterojunction in the channel region separated from said p-n junction which serves to cause the accumulation of carriers of the lower mobility type and to control their release to said gate in response to the potential applied to said gate; said photoconductor including two electrical contacts to the channel region, one of which is biased more positively than the other, the gate being associated with the channel region between the two contacts; and said photoconductor being in the form of an embedded gate photoFET comprising a substrate of semi-insulating InP into a surface of which extends a p InP region comprising said gate, a layer of n InP disposed on said surface and over and in contact with the p InP region an n GaInAs layer disposed on the n InP layer, the n GaInAs and n InP layers together comprising the channel region the two electrical contacts being spaced apart on a surface of the n GaInAs layer.

Claim 5

A photoconductor including a channel region of a first semiconductor material having a first conductivity type in which electron-hole pairs are created in response to the incidence of optical radiation thereat, a gate of a second conductivity type associated with and forming a p-n junction with the channel region and a region of a second semiconductor material forming an abrupt heterojunction in the channel region separated from said p-n junction which serves to cause the accumulation of carriers of the lower mobility type and to control their release to said gate in response to the potential applied to said gate; said photoconductor including two electrical contacts to the channel region, one of which is biased more positively than the other, the gate being associated with the channel region between the two contacts; and said photoconductor being in the form of an embedded gate photoHEMT comprising a substrate of semi-insulating InP into a surface of which extends a p InP region comprising said gate, a layer of n InP disposed on said surface and over and in contact with the p InP region, a substantially undoped GaInAs layer on the n InP layer, the GaInAs and n InP layers together comprising the channel region, an n + InP layer disposed on the GaInAs layer, the two electrical contacts being spaced apart on a surface of the n + InP layer and connected to the GaInAs layer via alloyed or implanted regions extending through the n + InP layer.

Claim 6

A photoconductor including a channel region of a first semiconductor material having a first conductivity type in which electron-hole pairs are created in response to the incidence of optical radiation thereat, a gate of a second conductivity type associated with and forming a p-n junction with the channel region and a region of a second semiconductor material forming an abrupt heterojunction in the channel region separated from said p-n junction which serves to cause the accumulation of carriers of the lower mobility type and to control their release to said gate in response to the potential applied to said gate; said photoconductor including two electrical contacts to the channel region, one of which is biased more positively than the other, the gate being associated with the channel region between the two contacts; and said photoconductor being in the form of an embedded gate photoHEMT comprising a substrate of semi-insulating InP into a surface of which extends a p InP region comprising said gate, a layer of n InP disposed on said surface and over and in contact with the p InP region, a substantially undoped GaInAs layer on the n InP layer, the GaInAs and n InP layers together comprising the channel region, an n + InP layer disposed on the GaInAs layer, the two electrical contacts being spaced apart on a surface of the n + InP layer and connected to the GaInAs layer via alloyed or implanted regions extending through the n + InP layer.

Claim 7

A photoconductor as claimed in claim 2, wherein the two electrical contacts are interdigitated whereby to obtain a large photosensitive area without increasing the distance between the contacts.

Claim 8

A photoconductor including a channel region of a first semiconductor material having a first conductivity type in which electron-hole pairs are created in response to the incidence of optical radiation thereat, a gate of a second conductivity type associated with and forming a p-n junction with the channel region and a region of a second semiconductor material forming an abrupt heterojunction in the channel region separated from said p-n junction which serves to cause the accumulation of carriers of the lower mobility type and to control their release to said gate in response to the potential applied to said gate; said photoconductor including two electrical contacts to the channel region, one of which is biased more positively than the other, the gate being associated with the channel region between the two contacts; and said photoconductor being in the form of a photoFET comprising a substrate of semi-insulating InP, the channel region including a layer of n GaInAs disposed on one surface of the substrate, the two electrical contacts being spaced apart on a surafce of the n GaInAs layer, and the channel region further including a region of n - InP extending into the n GaInAs layer from the surface thereof between the two contacts, and the gate comprising a p InP region in contact the n - InP region; wherein the GaInAs is substituted by a compound semiconductor sensitive to radiation of interest and wherein the InP is substituted by a compound of equal lattice constant to said compound semiconductor but with a broader band gap and the necessary step in the valence band relative to said compound semiconductor to cause said accumulation.

Claim 9

A photoconductor including a channel region of a first semiconductor material having a first conductivity type in which electron-hole pairs are created in response to the incidence of optical radiation thereat, a gate of a second conductivity type associated with and forming a p-n junction with the channel region and a region of a second semiconductor material forming an abrupt heterojunction in the channel region separated from said p-n junction which serves to cause the accumulation of carriers of the lower mobility type and to control their release to said gate in response to the potential applied to said gate; said photoconductor including two electrical contacts to the channel region, one of which is biased more positively than the other, the gate being associated with the channel region between the two contacts; and said photoconductor being in the form of a photoFET comprising a substrate of semi-insulating InP, the channel region including a layer of n GaInAs disposed on one surface of the substrate, the two electrical contacts being spaced apart on a surafce of the n GaInAs layer, and the channel region further including a region of n - InP extending into the n GaInAs layer from the surface thereof between the two contacts, and the gate comprising a p InP region in contact the n - InP region; wherein the GaInAs is substituted by a compound semiconductor sensitive to radiation of interest and wherein the InP is substituted by a compound of equal lattice constant to said compound semiconductor but with a broader band gap and the necessary step in the valence band relative to said compound semiconductor to cause said accumulation.