Semiconductor device

Abstract

Abstract PURPOSE:To perform modification and trimming of electron surface density in an accumulated electron group at low temperatures by a method wherein a p-n junction is formed in the upper part of an electron-donative layer and the p side is flanked with a trimming electrode and controlling electrode. CONSTITUTION:A channel layer 2 and electron-donative layer 3 are formed on a substrate 1, and alloyed layers 4 are formed by heat treatment, which extend through the electron-donative layer 3 to include the upper part of the channel layer 2. Then, source/drain electrodes 5 are formed on the alloyed layers 4. Next, a p type region 8 is formed on the upper surface of the electron-donative layer 3, which is further topped by a controlling electrode 6 and trimming electrode 7. Next, with the entirety kept at low temperatures in a low-temperature vessel 9, the lower region of the controlling electrode 6 is subjected to electromagnetic wave irradiation, for the enhancement of electron density and mobility in an accumulated electron group 11.

Inventors

• 👤 Shigeru Okamura
• 👤 茂 岡村
• 👤 Tomonori Ishikawa
• 👤 石川　知則
• 👤 Toshio Hashimoto
• 👤 橋本　寿夫

Bibliographic Details