Field effect transistor

Claim 2

A Schottky gate field effect transistor comprising: a channel layer; a gate electrode disposed on and contacting said channel layer; a drain electrode and a first contact layer successively arranged on said channel layer, spaced from said gate electrode, with said first contact layer contacting said channel layer; a source electrode spaced from said gate electrode and on an opposite side of said gate electrode from said drain electrode; a second contact layer contacting said source electrode; and a first resonant tunneling diode disposed between and contacting said second contact layer and said channel layer, opposite said source electrode, and extending beyond said source electrode toward said gate electrode but ending between said source electrode and said gate electrode for supplying hot electrons to a region of said channel layer opposite said gate electrode, said second contact layer and said first resonant tunneling diode being interposed between said source electrode and said channel layer, said first resonant tunneling diode comprising two barrier layers having a first energy band gap sandwiching a potential well layer having a second energy band gap smaller than the first energy band gap, said barrier layers and said potential well layer including a first portion substantially parallel to said channel layer and a second portion oblique to said channel layer, one of said barrier layers contacting said channel layer where said barrier layer is oblique to said channel layer.

Claim 3

A heterojunction field effect transistor comprising: an undoped semiconductor channel layer having an energy bandgap; a semiconductor electron supply layer disposed on said undoped channel layer, said electron supply layer having an energy bandgap larger than the energy bandgap of said undoped channel layer; a gate electrode disposed on said electron supply layer; a drain electrode and a first contact layer successively arranged on said electron supply layer, said drain electrode being spaced from said gate electrode, and said first contact layer contacting said electron supply layer and said gate electrode; a source electrode spaced from said gate electrode and disposed on an opposite side of said gate electrode from said drain electrode; a second contact layer contacting said source electrode; and a first resonant tunneling diode disposed between and contacting said second contact layer and said channel layer, opposite said source electrode, and extending beyond said source electrode toward said gate electrode but ending between said source electrode and said gate electrode for supplying hot electrons to a channel region of said undoped channel layer opposite said gate electrode, said second contact layer and said first resonant tunneling diode being interposed between said source electrode and said channel layer, said first resonant tunneling diode comprising two barrier layers having a first energy band gap sandwiching a potential well layer having a second energy band gap smaller than the first energy band gap, said barrier layers and said potential well layers including a first portion substantially parallel to said channel layer and a second portion oblique to said channel layer, one of said barrier layers contacting said channel layer where said barrier layer is oblique to said channel layer.

Claim 4

A heterojunction field effect transistor comprising: an undoped semiconductor channel layer having an energy bandgap; a semiconductor electron supply layer disposed on said undoped channel layer, said electron supply layer having an energy bandgap larger than the energy bandgap of said undoped channel layer; a gate electrode disposed on said electron supply layer; a drain electrode and a first contact layer successively arranged on said electron supply layer, said drain electrode being spaced from said gate electrode, and said first contact layer contacting said electron supply layer and said gate electrode; a source electrode spaced from said gate electrode and disposed on an opposite side of said gate electrode from said drain electrode; a second contact layer contacting said source electrode; and a first resonant tunneling diode disposed between and contacting said second contact layer and said channel layer, opposite said source electrode, and extending beyond said source electrode toward said gate electrode but ending between said source electrode and said gate electrode for supplying hot electrons to a channel region of said undoped channel layer opposite said gate electrode, said second contact layer and said first resonant tunneling diode being interposed between said source electrode and said channel layer, said first resonant tunneling diode comprising two barrier layers having a first energy band gap sandwiching a potential well layer having a second energy band gap smaller than the first energy band gap, said barrier layers and said potential well layers including a first portion substantially parallel to said channel layer and a second portion oblique to said channel layer, one of said barrier layers contacting said channel layer where said barrier layer is oblique to said channel layer.

Claim 5

A Schottky gate field effect transistor according to claim 2 including a second resonant tunneling diode disposed between and contacting said drain electrode and said first contact layer and extending beyond said drain electrode toward said gate electrode but ending between said drain electrode and said gate electrode.

Claim 6

The Schottky gate field effect transistor according to claim 1 wherein said channel layer comprises GaAs said barrier layers are AlGaAs and said potential well layer is undoped GaAs.

Claim 7

The Schottky gate field effect transistor according to claim 3 wherein said channel layer comprises GaAs and said barrier layers are AlGaAs and said potential well layers are undoped GaAs.

Claim 8

A Schottky gate field effect transistor comprising: a channel layer; a gate electrode disposed on and contacting said channel layer; a drain electrode and a firs contact layer successively arranged on said channel layer, spaced from said gate electrode, with said first contact layer contacting said channel layer; a source electrode spaced from said gate electrode and on an opposite side of said gate electrode from said drain electrode; a second contact layer contacting said source electrode; and a first resonant tunneling diode disposed between and contacting said second contact layer and said channel layer, opposite said source electrode, and extending beyond said source electrode toward said gate electrode but ending between said source electrode and said gate electrode for supplying hot electrons to a region of said channel layer opposite said gate electrode, said second contact layer and said first resonant tunneling diode being interposed between said source electrode and said channel layer, said first resonant tunneling diode comprising two metal layers and a dielectric layer disposed between said metal layers, said metal layers and said dielectric layer including a first portion substantially parallel to said channel layer and a second portion oblique to said channel layer, one of said metal layers contacting said channel layer where said metal layer is oblique to said channel layer.

Claim 9

A Schottky gate field effect transistor comprising: a channel layer; a gate electrode disposed on and contacting said channel layer; a drain electrode and a firs contact layer successively arranged on said channel layer, spaced from said gate electrode, with said first contact layer contacting said channel layer; a source electrode spaced from said gate electrode and on an opposite side of said gate electrode from said drain electrode; a second contact layer contacting said source electrode; and a first resonant tunneling diode disposed between and contacting said second contact layer and said channel layer, opposite said source electrode, and extending beyond said source electrode toward said gate electrode but ending between said source electrode and said gate electrode for supplying hot electrons to a region of said channel layer opposite said gate electrode, said second contact layer and said first resonant tunneling diode being interposed between said source electrode and said channel layer, said first resonant tunneling diode comprising two metal layers and a dielectric layer disposed between said metal layers, said metal layers and said dielectric layer including a first portion substantially parallel to said channel layer and a second portion oblique to said channel layer, one of said metal layers contacting said channel layer where said metal layer is oblique to said channel layer.

Claim 10

The Schottky gate field effect transistor according to claim 6 including a second resonant tunneling diode disposed between and contacting said drain electrode and said first contact layer and extending beyond said drain electrode toward said gate electrode but ending between said drain electrode and said gate electrode and wherein each of said first and second resonant tunneling diodes comprises two metal layers and a dielectric layer disposed between said metal layers.

Claim 11

The heterojunction field effect transistor according to claim 2 including a second resonant tunneling diode disposed between and contacting said first contact layer and said drain electrode and extending beyond said drain electrode toward said gate electrode but ending between said drain electrode and said gate electrode.

Claim 12

The heterojunction field effect transistor according to claim 2 wherein said channel layer comprises GaAs, said barrier layers are AlGaAs, and said potential well layer is undoped GaAs.

Claim 13

The heterojunction field effect transistor according to claim 8 wherein said channel layer comprises GaAs, said barrier layers are AlGaAs, and said potential well layers are undoped GaAs.

Claim 14

A heterojunction field effect transistor comprising: an undoped semiconductor channel layer having an energy bandgap; a semiconductor electron supply layer disposed on said undoped channel layer, said electron supply layer having an energy bandgap larger than the energy bandgap of said undoped channel layer; a gate electrode disposed on said electron supply layer; a drain electrode and a first contact layer successively arranged on said electron supply layer, said drain electrode being spaced from said gate electrode, and said first contact layer contacting said electron supply layer and said gate electrode; a source electrode spaced from said gate electrode and disposed on an opposite side of said gate electrode from said drain electrode; a second contact layer contacting said source electrode; and a first resonant tunneling diode disposed between and contacting said second contact layer and said channel layer, opposite said source electrode, and extending beyond said source electrode toward said gate electrode but ending between said source electrode and said gate electrode for supplying hot electrons to a channel region of said undoped channel layer opposite said gate electrode, said second contact layer and said first resonant tunneling diode being interposed between said source electrode and said channel layer, said first resonant tunneling diode comprising two metal layers and a dielectric layer disposed between said metal layers, said metal layers and said dielectric layer including a first portion substantially parallel to said channel layer and a second portion oblique to said channel layer, one of said metal layers contacting said channel layer where said metal layer is oblique to said channel layer.

Claim 15

A heterojunction field effect transistor comprising: an undoped semiconductor channel layer having an energy bandgap; a semiconductor electron supply layer disposed on said undoped channel layer, said electron supply layer having an energy bandgap larger than the energy bandgap of said undoped channel layer; a gate electrode disposed on said electron supply layer; a drain electrode and a first contact layer successively arranged on said electron supply layer, said drain electrode being spaced from said gate electrode, and said first contact layer contacting said electron supply layer and said gate electrode; a source electrode spaced from said gate electrode and disposed on an opposite side of said gate electrode from said drain electrode; a second contact layer contacting said source electrode; and a first resonant tunneling diode disposed between and contacting said second contact layer and said channel layer, opposite said source electrode, and extending beyond said source electrode toward said gate electrode but ending between said source electrode and said gate electrode for supplying hot electrons to a channel region of said undoped channel layer opposite said gate electrode, said second contact layer and said first resonant tunneling diode being interposed between said source electrode and said channel layer, said first resonant tunneling diode comprising two metal layers and a dielectric layer disposed between said metal layers, said metal layers and said dielectric layer including a first portion substantially parallel to said channel layer and a second portion oblique to said channel layer, one of said metal layers contacting said channel layer where said metal layer is oblique to said channel layer.

Claim 16

The heterojunction field effect transistor according to claim 11 including a second resonant tunneling diode disposed between and contacting said first contact layer and said drain electrode and extending beyond said drain electrode toward said gate electrode but ending between said drain electrode and said gate electrode wherein each of said first and second resonant tunneling diodes comprises two metal layers and a dielectric layer disposed between said metal layers.

Claim 17

The Schottky gate field effect transistor according to claim 1 including a second resonant tunneling diode disposed between and contacting said first contact layer and said channel layer and extending beyond said drain electrode toward said gate electrode but ending between said drain electrode and said gate electrode.

Claim 18

The Schottky gate field effect transistor according to claim 1 including a high resistivity substrate and a buffer layer disposed on said substrate wherein said channel layer is disposed on and in contact with said buffer layer and said first resonant tunneling diode is disposed between and in contact with said second contact layer and said buffer layer.

Claim 19

The heterojunction field effect transistor according to claim 2 including a semiconductor substrate and a buffer layer disposed on said substrate wherein said channel layer is disposed on and in contact with said buffer layer and said resonant tunneling diode is disposed between and in contact with said second contact layer and said buffer layer.