Patent US5532190A successfully refreshed from Google Patents.
US5532190A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma treatment method in electronic device manufacture
Assignee: US Philips Corp
•
Filing: 1995-05-15
•
Granted: 1996-07-02
•
Expires: 2015-05-15
Abstract
Abstract In the manufacture of a large-area electronic device such as a large-area liquid-crystal display device with thin-film address and drive circuitry, a plasma treatment is carried out on a device substrate (4) which is mounted on a supporting electrode (11) facing a perforated gas-feeding electrode (12). A reactive plasma (5) is generated in a space between the electrodes (11, 12) from a mixture of reaction gases which is fed into the space through at least the perforated electrode (12). The mixture of gases comprises a first reaction gas (e.g. SiH 4 ) which is depleted at a faster rate in the plasma treatment than a second reaction gas (e.g N 2 ). Through an area (12b) of the perforated electrode, one or more second supply lines (22) feeds a secondary mixture which is richer in the first reaction gas than a primary mixture supplied by a first supply line (21). This arrangement permits the plasma treatment to be carried out more uniformly over the area of the supporting electrode (11), by fine tuning the gas composition in depleted areas after the main aspects of the process performance (e.g temperature, pressure, reactant gases, composition of the primary mixture) have been determined in accordance with the desired plasma treatment properties.
Inventors
- 👤 Andrew L. Goodyear
- 👤 Ian D. French
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:58
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45574; C23C16/45512; C23C16/45565; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
207 words
A method of manufacturing an electronic device in which a plasma treatment is carried out on a device substrate which is mounted on a supporting electrode facing a perforated gas-feeding electrode, a reactive plasma being generated in a space between the electrodes from a mixture of reaction gases which is fed into the space through at least the perforated electrode, wherein a primary mixture of gases flows in a direction across the substrate from a first area of the space to which it is supplied by a first supply line, and a second supply line feeds a secondary mixture of gases to a second area of the space through the perforated electrode, the second area being excluded from the first area and the second area being along the flow direction from the first area, the primary mixture of gases comprising a first reaction gas which is depleted at a faster rate in the plasma treatment than a second reaction gas in the primary mixture, and the second supply line supplying a secondary mixture which is richer in the first reaction gas than the primary mixture supplied by the first supply line, whereby the plasma treatment is carried out more uniformly over the area of the supporting electrode.
Claim 2
Independent Claim
207 words
A method of manufacturing an electronic device in which a plasma treatment is carried out on a device substrate which is mounted on a supporting electrode facing a perforated gas-feeding electrode, a reactive plasma being generated in a space between the electrodes from a mixture of reaction gases which is fed into the space through at least the perforated electrode, wherein a primary mixture of gases flows in a direction across the substrate from a first area of the space to which it is supplied by a first supply line, and a second supply line feeds a secondary mixture of gases to a second area of the space through the perforated electrode, the second area being excluded from the first area and the second area being along the flow direction from the first area, the primary mixture of gases comprising a first reaction gas which is depleted at a faster rate in the plasma treatment than a second reaction gas in the primary mixture, and the second supply line supplying a secondary mixture which is richer in the first reaction gas than the primary mixture supplied by the first supply line, whereby the plasma treatment is carried out more uniformly over the area of the supporting electrode.
Claim 3
Dependent Claim
23 words
A method as claimed in claim 1, further characterised in that the plasma treatment involves depositing material on a surface of the substrate.
Claim 4
Dependent Claim
20 words
A method as claimed in claim 2, further characterised in that the first reaction gas is silane (SiH 4 ).
Claim 5
Dependent Claim
27 words
A method as claimed in claim 3, further characterised in that the second reaction gas comprises nitrogen (N 2 ), and the deposited material is silicon nitride.
Claim 6
Dependent Claim
20 words
A method as claimed in claim 4, further characterised in that the second reaction gas is ammonia (NH 3 ).
Claim 7
Dependent Claim
24 words
A method as claimed in claim 1, further characterised in that the plasma treatment involves etching away material from a surface of the substrate.
Claim 8
Dependent Claim
63 words
A method as claimed in claim 1, further characterised in that the first supply line feeds the primary mixture through a central area of the perforated electrode, and the second supply line feeds the secondary mixture through a peripheral area of the perforated electrode, the direction of gas flow over the supporting electrode being radially outward from the first area of the space.
Claim 9
Dependent Claim
59 words
A method as claimed in claim 1, further characterised in that the first supply line feeds a first peripheral area of the space through an inlet separate from the perforated electrode, the direction of gas flow over the supporting electrode being longitudinally across the supporting electrode, from the first peripheral area to an opposite peripheral area of the space.
Claim 10
Dependent Claim
58 words
The method of claim 1, wherein the first supply line feed the primary mixture through a central area of the perforated electrode, and the second supply line feeds the secondary mixture through a peripheral area of the perforated electrode, the direction of gas flow over the supporting electrode being radially inward toward the first area of the space.
References Cited (Backward Citations)
US3854443A
Cited
JPS5687328A
Cited
JPS615515A
Cited
JPS6187872A
Cited
JPS61261485A
Cited
JPS6281089A
Cited
JPS62290885A
Cited
JPS6353932A
Cited
US4810322A
Cited
US4980204A
Cited
JPH01223724A
Cited
US5269847A
Cited
EP0561462A2
Cited
US5453124A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-02 | 2000-01-01 | 2000-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-02 | 2004-01-01 | 2004-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-02 | 2008-01-01 | 2008-07-02 | $7700.00 | Window Closed / Lapsed |