Abstract The present invention concerns a multilayered structure comprising copper-oxide perovskite material having strained crystallographic lattices and altered superconductive properties. The multilayer structure of the invention comprises at least one first layer of a first copper-oxide material and at least one second layer of a second, different copper-oxide perovskite material. The first and second layers are adjacent to one another in an epitaxial lattice-distortion relationship. The first and second copper-oxide perovskite materials in unstressed bulk states define respectively first and second comparison nondistorted crystallographic lattice structures. The first and second comparison nondistorted crystallographic lattice structures have unit cell dimensions which differ in at least one dimension. The first copper-oxide perovskite material in the first layer has a first crystallographic lattice structure which is distorted relative to the first comparison nondistorted crystallographic lattice structure. The second copper-oxide perovskite material in the second layer has a second crystallographic lattice structure which is distorted relative to the second comparison nondistorted crystallographic lattice structure. The first copper-oxide perovskite material in at least one first layer exhibits normal and superconductive states which define a set of normal/superconducting transition parameters. At least one of the normal/superconducting transition parameters differs from a corresponding comparison normal/superconducting transition parameter for the first copper-oxide perovskite material in the unstressed bulk state.
A multilayer structure comprising: at least one first epitaxial layer of a first copper-oxide perovskite material having a first non-distorted crystallographic lattice structural state with first unit cell dimensions when said first copper-oxide perovskite material is unstressed in bulk, said first copper-oxide perovskite material when unstressed in bulk exhibiting a first set of non-superconducting to superconducting electrical conduction parameters; at least one second epitaxial layer of a second copper-oxide perovskite material, said second epitaxial copper-oxide perovskite material being different in composition than said first copper-oxide perovskite material and having a second non-distorted crystallographic lattice structural state with second unit cell dimensions which differ from said first unit cell dimensions when said second copper-oxide perovskite material is unstressed in bulk, said second copper-oxide perovskite material when unstressed in bulk exhibiting a second set of non-superconducting to superconducting electrical conduction parameters, said first and second epitaxial layers being deposited one on the other so that crystallographic structures of said first and second copper-oxide perovskite materials in said layers are distorted relative to said first and second non-distorted crystallographic lattice structural states respectfully with at least one of said non-superconducting to superconducting electrical conduction parameters of said multilayer structure differing from a corresponding electrical conduction parameter of said first and second sets of normal to superconducting electrical conduction parameters as a result of the distortion relative to said first and second non-distorted crystallographic lattice structural states in which said first copper-oxide perovskite material is YBa 2 CU 3 O 7- δ ; said first undistorted crystallographic lattice structural state is an orthorhombic crystal structure with "a" and "b" unit cell dimensions of approximately 3.83 Å and 3.88 Å respectively for δ close to zero; said second copper-oxide perovskite material is Nd 1 .83 Ce 0 .17 CUO 4 ±Y ; and said second undistorted crystallographic structural state is an tetragonal crystal structure with "a" and "b" unit cell dimensions approximately equal to 3.95 Å.
Claim 2
Dependent Claim
321 words
A multilayer structure comprising: at least one first epitaxial layer of a first copper-oxide perovskite material having a first non-distorted crystallographic lattice structural state with first unit cell dimensions when said first copper-oxide perovskite material is unstressed in bulk, said first copper-oxide perovskite material when unstressed in bulk exhibiting a first set of non-superconducting to superconducting electrical conduction parameters; at least one second epitaxial layer of a second copper-oxide perovskite material, said second epitaxial copper-oxide perovskite material being different in composition than said first copper-oxide perovskite material and having a second non-distorted crystallographic lattice structural state with second unit cell dimensions which differ from said first unit cell dimensions when said second copper-oxide perovskite material is unstressed in bulk, said second copper-oxide perovskite material when unstressed in bulk exhibiting a second set of non-superconducting to superconducting electrical conduction parameters, said first and second epitaxial layers being deposited one on the other so that crystallographic structures of said first and second copper-oxide perovskite materials in said layers are distorted relative to said first and second non-distorted crystallographic lattice structural states respectfully with at least one of said non-superconducting to superconducting electrical conduction parameters of said multilayer structure differing from a corresponding electrical conduction parameter of said first and second sets of normal to superconducting electrical conduction parameters as a result of the distortion relative to said first and second non-distorted crystallographic lattice structural states in which said first copper-oxide perovskite material is YBa 2 CU 3 O 7- δ ; said first undistorted crystallographic lattice structural state is an orthorhombic crystal structure with "a" and "b" unit cell dimensions of approximately 3.83 Å and 3.88 Å respectively for δ close to zero; said second copper-oxide perovskite material is Nd 1 .83 Ce 0 .17 CUO 4 ±Y ; and said second undistorted crystallographic structural state is an tetragonal crystal structure with "a" and "b" unit cell dimensions approximately equal to 3.95 Å.
Claim 3
Dependent Claim
33 words
The multilayer structure of claim 1 wherein: the distorted crystallographic structures of said first and second copper-oxide perovskite material layers both have "a" and "b" unit cell dimensions approximately equal to 3.88 Å.