US5529951A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
Assignee: Japan Display West Inc
•
Filing: 1994-11-01
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Granted: 1996-06-25
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Expires: 2014-11-01
Abstract
Abstract A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350 DEG C. to 500 DEG C., more preferably 350 DEG C. to 450 DEG C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm2 to 500 mJ/cm2, preferably 280 mJ/cm2 to 330 mJ/cm2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.
Inventors
- 👤 Takashi Noguchi
- 👤 Tohru Ogawa
- 👤 Yuji Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:11
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; B; B23; B23K; B23K26/00; B23K26/02; B23K26/03; B23K26/032; B23K26/04; B23K26/06; B23K26/0604; B23K26/0608; B23K26/064; B23K26/0643; B23K26/0648; B23K26/0652; B23K26/066; B23K26/0665; B23K26/067; B23K26/12; B23K26/1224; B23K26/123; B23K26/70; B23K26/702; B23K26/705; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/56; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3816; H10P14/382; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6316; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/09; Y10S148/093
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
187 words
A method of forming a thin layer of polycrystalline silicon having an average grain size of about 150 nm on a substrate comprising: forming an amorphous silicon layer having a thickness of from about 30 nm to about 50 nm on a substrate using monosilane (SiH 4 ) by a low pressure CVD method at a deposition temperature of less than about 500° C.; heating the amorphous silicon layer and substrate to a temperature of from about 350° C. to about 450° C.; irradiating the heated amorphous silicon layer in a single shot with excimer laser light having substantially uniform intensity in a diametrical direction of flux and having a total energy of at least 10 J, an energy density of from about 280 mJ/cm 2 to 330 mJ/cm 2 at a pulse width of from about 140 ns to about 200 ns, whereby a polycrystalline silicon thin film having an average grain size of about 150 nm and a low electron trap density at grain boundaries and in grains is provided over a region of at least about 6 cm×6 cm in a single annealing treatment.
Claim 2
Independent Claim
187 words
A method of forming a thin layer of polycrystalline silicon having an average grain size of about 150 nm on a substrate comprising: forming an amorphous silicon layer having a thickness of from about 30 nm to about 50 nm on a substrate using monosilane (SiH 4 ) by a low pressure CVD method at a deposition temperature of less than about 500° C.; heating the amorphous silicon layer and substrate to a temperature of from about 350° C. to about 450° C.; irradiating the heated amorphous silicon layer in a single shot with excimer laser light having substantially uniform intensity in a diametrical direction of flux and having a total energy of at least 10 J, an energy density of from about 280 mJ/cm 2 to 330 mJ/cm 2 at a pulse width of from about 140 ns to about 200 ns, whereby a polycrystalline silicon thin film having an average grain size of about 150 nm and a low electron trap density at grain boundaries and in grains is provided over a region of at least about 6 cm×6 cm in a single annealing treatment.
Claim 3
Dependent Claim
42 words
A method of forming a thin layer of polycrystalline silicon on a substrate, according to claim 1, further including a step of forming a light reflection prevention film on a surface of said amorphous silicon layer, before said heating and irradiating steps.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-25 | 1999-12-25 | 2000-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-25 | 2003-12-25 | 2004-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-25 | 2007-12-25 | 2008-06-25 | $7700.00 | Window Closed / Lapsed |