US4685976A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multi-layer semiconductor processing with scavenging between layers by excimer laser
Assignee: Eaton Corp
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Filing: 1985-05-22
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Granted: 1987-08-11
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Expires: 2005-05-22
Abstract
Abstract A semiconductor processing technique is disclosed for forming a multi-layered semiconductor structure in a single chamber and with the same equipment, without removing the semiconductor wafer substrate or otherwise transferring it to another chamber. A gaseous mixture of different gases is provided in a chamber. Excimer pulsed ultraviolet laser radiation is introduced into the chamber at a first discrete wavelength to photolytically react with a first of the gases at a discrete excitation energy photochemically breaking bonds of the first gas to epitaxially deposit a first layer on the substrate, followed by radiation at a second discrete wavelength to photolytically react with a second gas to deposit a second layer on the first layer, and so on. The different gases may be introduced into the chamber collectively, or serially between radiations. Scavenging between layers is provided by photolytic removal of surface containments and the products of reaction.
Inventors
- 👤 Steven R. Schachameyer
- 👤 James A. Benjamin
- 👤 John B. Pardee
- 👤 Lyle O. Hoppie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 01:06
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0254; C23C16/0263; C23C16/44; C23C16/48; C23C16/483; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/093; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
239 words
A single chamber semiconductor processing technique for a multi-layered semiconductor structure, comprising: providing a chamber capable of receiving gas; placing a semiconductor wafer substrate in said chamber; introducing a gaseous mixture of different gases into said chamber; and providing excimer pulsed ultraviolet laser means and introducing radiation from said excimer laser means into said chamber at a first discrete wavelength to photolytically react with a first of said gases at a discrete excitation energy photochemically breaking bonds of said first gas to epitaxially deposit a first layer on said substrate, without thermally driven pyrolytic deposition, introducing radiation from said excimer laser means into said chamber at a second discrete wavelength to photolytically react with a second of said gases at a discrete excitation energy photochemically breaking bonds of said second gas to deposit a second layer on said first layer, without thermally driven pyrolytic deposition, and introducing further different wavelengths of radiation from said excimer laser means for further layers from further different said gases, said excimer laser means providing photochemical selectivity in depositing layers from said gaseous miture in the same said chamber without removal of said substrate, and all without changing or adding to said gaseous mixture in said chamber, and introducing additional scavenging wavelengths of radiation from said excimer laser means after formation of one or more of said layers to photolytically treat and remove surface contaminants and scavenge the products of reaction of layer formation.
Claim 2
Dependent Claim
239 words
A single chamber semiconductor processing technique for a multi-layered semiconductor structure, comprising: providing a chamber capable of receiving gas; placing a semiconductor wafer substrate in said chamber; introducing a gaseous mixture of different gases into said chamber; and providing excimer pulsed ultraviolet laser means and introducing radiation from said excimer laser means into said chamber at a first discrete wavelength to photolytically react with a first of said gases at a discrete excitation energy photochemically breaking bonds of said first gas to epitaxially deposit a first layer on said substrate, without thermally driven pyrolytic deposition, introducing radiation from said excimer laser means into said chamber at a second discrete wavelength to photolytically react with a second of said gases at a discrete excitation energy photochemically breaking bonds of said second gas to deposit a second layer on said first layer, without thermally driven pyrolytic deposition, and introducing further different wavelengths of radiation from said excimer laser means for further layers from further different said gases, said excimer laser means providing photochemical selectivity in depositing layers from said gaseous miture in the same said chamber without removal of said substrate, and all without changing or adding to said gaseous mixture in said chamber, and introducing additional scavenging wavelengths of radiation from said excimer laser means after formation of one or more of said layers to photolytically treat and remove surface contaminants and scavenge the products of reaction of layer formation.
Claim 3
Dependent Claim
17 words
The invention according to claim 1 wherein said scavenging wavelength is different than said layer formation wavelengths.
Claim 4
Dependent Claim
55 words
The invention according to claim 1 comprising: providing a scavenger gas as part of said mixture in said chamer; and irradiating said scavenger gas with said scavenger wavelength of said excimer pulsed ultraviolet laser radiation to photolytically react with and activate said scavenger gas and release scavenging agents to remove surface contaminants from the layer.
Claim 5
Dependent Claim
23 words
The invention according to claim 1 comprising scavenging and removing surface contaminants from said one layer prior to formation of the next layer.
Claim 6
Dependent Claim
24 words
The invention according to claim 1 comprising scavenging and removing surface contaminants from said one layer concurrently with formation of the next layer thereon.
Claim 7
Dependent Claim
53 words
The invention according to claim 1 comprising photolytically epitaxially depositing single crystalline each said layer at a temperature ranging from room temperature to about 400° C. at discrete pulsed wavelengths corresponding to discrete excitation energies providing uniform nucleation and crystallization across large areas without hot spot focusing, and eliminating growth from separate islands.
Claim 8
Dependent Claim
40 words
The invention according to claim 1 comprising providing said excimer laser means tunable in the ultraviolet region between about 150 and 400 nanometers, and providing said radiation up to about 1 joule per pulse at up to about 250 hertz.
Claim 9
Dependent Claim
37 words
The invention according to claim 3 wherein said scavenger gas is selected from the group consisting of nitrogen dioxide and carbon tetrafluoride and photolytically reacts with said excimer laser radiation to produce scavenging radicals, ions or neutrals.
Claim 10
Dependent Claim
39 words
The invention according to claim 7 comprising precisely controlling the rate of deposition and growth by controlling the duration of said excimer laser means radiation, whereby to afford substantially more accurate layer thickness control than a pyrolytic thermal process.
Claim 11
Dependent Claim
30 words
The invention according to claim 8 wherein said scavenger gas and said layer-forming gases are benign relative to each other and activated at different excimer pulsed ultraviolet laser radiation wavelengths.
Claim 12
Dependent Claim
23 words
The invention according to claim 8 comprising irradiating the layer with said scavenger wavelength excimer pulsed ultraviolet laser radiation to enhance scavenging action.
Claim 13
Dependent Claim
202 words
A single chamber semiconductor processing technique for a multi-layered semiconductor structure, comprising: providing a chamber capable of receiving gas; placing a semiconductor wafer substrate in said chamber; introducing a gaseous mixture of different gases into said chamber; and providing excimer pulsed ultraviolet laser means and introducing radiation from said excimer laser means into said chamber at a first discrete wavelength to photolytically react with a first of said gases at a discrete excitation energy photochemically breaking bonds of said first gas to expitaxially deposit a first layer on said substrate, without thermally driven pyrolytic deposition, introducing radiation from said excimer laser means into said chamber at a second discrete wavelength to photolytically react with a second of said gases at a discrete excitiation energy photochemically breaking bonds of said second gas to deposit a second layer on said first layer, without thermally driven pyrolytic deposition, and introducing further different wavelengths of radiation from said excimer laser means for further layers from further different said gases, said excimer laser means providing photochemical selectivity in depositing layers from said gaseous mixture in the same said chamber without removal of said substrate, and all without changing or adding to said gaseous mixture in said chamber.
Claim 14
Dependent Claim
202 words
A single chamber semiconductor processing technique for a multi-layered semiconductor structure, comprising: providing a chamber capable of receiving gas; placing a semiconductor wafer substrate in said chamber; introducing a gaseous mixture of different gases into said chamber; and providing excimer pulsed ultraviolet laser means and introducing radiation from said excimer laser means into said chamber at a first discrete wavelength to photolytically react with a first of said gases at a discrete excitation energy photochemically breaking bonds of said first gas to expitaxially deposit a first layer on said substrate, without thermally driven pyrolytic deposition, introducing radiation from said excimer laser means into said chamber at a second discrete wavelength to photolytically react with a second of said gases at a discrete excitiation energy photochemically breaking bonds of said second gas to deposit a second layer on said first layer, without thermally driven pyrolytic deposition, and introducing further different wavelengths of radiation from said excimer laser means for further layers from further different said gases, said excimer laser means providing photochemical selectivity in depositing layers from said gaseous mixture in the same said chamber without removal of said substrate, and all without changing or adding to said gaseous mixture in said chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-10 | 1991-02-09 | 1991-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-10 | 1995-02-09 | 1995-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-10 | 1999-02-09 | 1999-08-11 | $7700.00 | Window Closed / Lapsed |