US5518936A
Expired / Lapsed
US
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Method for producing metal wirings on an insulating substrate
Assignee: Sharp Corp
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Filing: 1995-03-13
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Granted: 1996-05-21
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Expires: 2015-03-13
Abstract
Abstract A method for producing metal wirings on an insulating substrate is disclosed. The method comprises the steps of forming a metal wiring layer of a predetermined shape on a predetermined position of the insulating substrate, the metal wiring layer being made of a metal capable of being oxidized; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.
Inventors
- 👤 Tomohiko Yamamoto
- 👤 Yasunori Shimada
- 👤 Hiroshi Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6324; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/01; H10D64/013; H10N; H10N70/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136286; G02F1/136295; H10P14/6304; H10P14/6314; H10P14/6319
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
88 words
A method for producing metal wirings on an insulating substrate, comprising the steps of: forming a metal wiring layer on the insulating substrate, the metal wiring layer being made of a metal capable of being oxidized; implanting the surface of the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element, wherein the metal wirings include gate electrode wirings or scanning signal wirings for an active matrix substrate using thin film transistors.
Claim 2
Independent Claim
88 words
A method for producing metal wirings on an insulating substrate, comprising the steps of: forming a metal wiring layer on the insulating substrate, the metal wiring layer being made of a metal capable of being oxidized; implanting the surface of the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element, wherein the metal wirings include gate electrode wirings or scanning signal wirings for an active matrix substrate using thin film transistors.
Claim 3
Dependent Claim
26 words
The method according to claim 1, wherein the metal of the metal wiring layer is selected from the group consisting of Ta, Nb, Ti, and Al.
Claim 4
Dependent Claim
20 words
The method according to claim 1, wherein the impurity element is selected from the group consisting of nitrogen and carbon.
Claim 5
Dependent Claim
24 words
The method according to claim 1, wherein the step of implanting the metal wiring layer with the impurity element is performed by ion implantation.
Claim 6
Dependent Claim
24 words
The method according to claim 1, wherein the step of implanting the metal wiring layer with the impurity element is performed by plasma annealing.
Claim 7
Dependent Claim
67 words
The method according to claim 1, wherein the metal wirings include gate electrode wirings for an active matrix substrate using thin film transistors, the gate electrode wirings include a body-centered cubic lattice of metal deposited on the insulating substrate and the insulating layer is formed by oxidizing the surface of the body-centered cubic lattice of metal, wherein the insulating layer contains most of the implanted impurity element.
Claim 8
Dependent Claim
23 words
A method according to claim 1, wherein the metal wirings include scanning signal wirings for an active matrix substrate using thin film diodes.
Claim 9
Independent Claim
55 words
A method for producing metal wirings on an insulating substrate, comprising the steps of: forming a Ta, Nb or Al metal wiring layer on an insulating substrate; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.
Claim 10
Independent Claim
55 words
A method for producing metal wirings on an insulating substrate, comprising the steps of: forming a Ta, Nb or Al metal wiring layer on an insulating substrate; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.
Claim 11
Dependent Claim
14 words
The method according to claim 8, wherein the impurity element is nitrogen or carbon.
Claim 12
Dependent Claim
15 words
The method according to claim 8, wherein the impurity element is implanted by ion implantation.
Claim 13
Dependent Claim
15 words
The method according to claim 8, wherein the impurity element is implanted by plasma annealing.
Claim 14
Dependent Claim
67 words
The method according to claim 8, wherein the metal wirings include gate electrode wirings for an active matrix substrate using thin film transistors, the gate electrode wirings include a body-centered cubic lattice of metal deposited on the insulating substrate and the insulating layer is formed by oxidizing the surface of the body-centered cubic lattice of metal, wherein the insulating layer contains most of the implanted impurity element.
Claim 15
Dependent Claim
23 words
The method according to claim 8, wherein the metal wirings include scanning signal wirings for an active matrix substrate using thin film diodes.
Claim 16
Independent Claim
52 words
A method for producing metal wirings on an insulating substrate, comprising the steps of: forming an Nb metal wiring layer on an insulating substrate; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.
Claim 17
Independent Claim
52 words
A method for producing metal wirings on an insulating substrate, comprising the steps of: forming an Nb metal wiring layer on an insulating substrate; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.
Claim 18
Dependent Claim
14 words
The method according to claim 14, wherein the impurity element is nitrogen or carbon.
Claim 19
Dependent Claim
15 words
The method according to claim 14, wherein the impurity element is implanted by ion implantation.
Claim 20
Dependent Claim
15 words
The method according to claim 14, wherein the impurity element is implanted by plasma annealing.
Claim 21
Dependent Claim
23 words
The method according to claim 14, wherein the metal wirings include gate electrode wirings for an active matrix substrate using thin film transistors.
Claim 22
Dependent Claim
23 words
The method according to claim 14, wherein the metal wirings include scanning signal wirings for an active matrix substrate using thin film diodes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-21 | 1999-11-20 | 2000-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-21 | 2003-11-20 | 2004-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-21 | 2007-11-20 | 2008-05-21 | $7700.00 | Window Closed / Lapsed |