Non-volatile memory device having a memory medium containing a liquid crystal compound

Claim 2

A non-volatile memory device comprising a memory medium filled between a substrate and a counter-substrate, the memory medium containing a liquid crystal compound, heating means for heating the memory medium so as to write information in the memory medium, read-out means for electrically reading information recorded in said memory medium, the heating means comprising upper and lower electrodes disposed face-to-face one of which is extended in the same direction as either of the substrates, heat generating means sandwiched between the electrodes, and insulating layers interposed between heating means adjacent in direction perpendicular to the upper and lower electrodes, the insulating layers having a low thermal diffusibility.

Claim 3

A non-volatile memory device according to claim 1, wherein the memory medium is made of a dielectric polymer liquid crystal.

Claim 4

A non-volatile memory device according to claim 1, wherein the memory medium is made of an electro-conductive polymer liquid crystal.

Claim 5

A non-volatile memory device according to claim 3, further comprising an aligning layer of electro-conductive material.

Claim 6

A non-volatile memory device comprising a substrate and a counter-substrate, a memory medium disposed between the substrate and the counter-substrate, the memory medium containing a liquid crystal compound, heating means disposed between the substrate and the memory means for heating the memory medium so as to write information in the memory medium, the read-out means for electrically reading information recorded in said memory medium.

Claim 7

A non-volatile memory device comprising a substrate and a counter-substrate, a memory medium disposed between the substrate and the counter-substrate, the memory medium containing a liquid crystal compound, heating means disposed between the substrate and the memory means for heating the memory medium so as to write information in the memory medium, the read-out means for electrically reading information recorded in said memory medium.

Claim 8

A non-volatile memory device comprising a substrate and a counter-substrate, a memory medium disposed between the substrate and the counter-substrate, the memory medium containing a liquid crystal compound, heating means for heating the memory medium so as to write information in the memory medium, and read-out means for electrically reading information recorded in the memory medium, the heating means comprising upper and lower electrodes disposed face-to-face.

Claim 9

A non-volatile memory device comprising a substrate and a counter-substrate, a memory medium disposed between the substrate and the counter-substrate, the memory medium containing a liquid crystal compound, heating means for heating the memory medium so as to write information in the memory medium, and read-out means for electrically reading information recorded in the memory medium, the heating means comprising upper and lower electrodes disposed face-to-face.

Claim 10

A non-volatile memory device comprising: a pair of opposed substrates; a memory medium including a liquid crystal compound, the memory medium being disposed between the pair of substrates; heating means disposed on one of said substrates for heating the memory medium to enable the memory medium to record information, the heating means including upper and lower electrodes and heat generating means sandwiched between areas of overlap of the upper and lower electrodes; reading means for electrically reading information stored in the memory medium.

Claim 11

A non-volatile memory device comprising: a pair of opposed substrates; a memory medium including a liquid crystal compound, the memory medium being disposed between the pair of substrates; heating means disposed on one of said substrates for heating the memory medium to enable the memory medium to record information, the heating means including upper and lower electrodes and heat generating means sandwiched between areas of overlap of the upper and lower electrodes; reading means for electrically reading information stored in the memory medium.

Claim 12

A non-volatile memory device according to claim 7, including thermal insulating means disposed between separate areas of overlap of the upper and lower electrodes for preventing thermal cross-talk between different areas of the memory medium.

Claim 13

A non-volatile memory device according to claim 7, wherein the reading means includes a counter-electrode disposed on the other of the substrates opposite the upper electrode.

Claim 14

A non-volatile memory device according to claim 9, wherein the reading means includes means for applying a reading voltage between the counter-electrode and the upper electrode.

Claim 15

A non-volatile memory device according to claim 7, wherein the reading means includes means for detecting the resistance of the memory medium.

Claim 16

A non-volatile memory device according to claim 7, wherein at least one of the substrates is transparent.

Claim 17

A non-volatile memory device, comprising: a memory medium formed between a first substrate and a second substrate, said memory medium comprising a plurality of memory cells formed of a liquid crystal material; a plurality of electrothermal heating means arranged on at least one of said first substrate and said second substrate, each of said plurality of electro-thermal heating means corresponding to a respective one of said memory cells; writing means for writing data to said memory device by selectively activating at least one of said electrothermal heating means whereby said liquid crystal material in said memory cell corresponding to said selectively activated electrothermal heating means is heated so as to permit a change in a property of said liquid crystal material; and reading means for electrically reading the data written to said memory device by detecting said change in said property.

Claim 18

A non-volatile memory device, comprising: a memory medium formed between a first substrate and a second substrate, said memory medium comprising a plurality of memory cells formed of a liquid crystal material; a plurality of electrothermal heating means arranged on at least one of said first substrate and said second substrate, each of said plurality of electro-thermal heating means corresponding to a respective one of said memory cells; writing means for writing data to said memory device by selectively activating at least one of said electrothermal heating means whereby said liquid crystal material in said memory cell corresponding to said selectively activated electrothermal heating means is heated so as to permit a change in a property of said liquid crystal material; and reading means for electrically reading the data written to said memory device by detecting said change in said property.

Claim 19

The memory device of claim 13, wherein each of said plurality of electrothermal heating means comprises a pair of electrodes with a heat generating layer interposed between said pair of electrodes.