Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
136 words
A low-distortion cascode circuit, comprising: a first field effect transistor and a second field effect transistor, with a drain of said first field effect transistor being connected to a source of said second field effect transistor; a first terminal for receiving a first signal, coupled to a gate electrode of said first field effect transistor; a second terminal for receiving a second signal, coupled to a gate electrode of said second field effect transistor; and a third terminal from which a signal from a drain of said second field effect transistor is output; wherein the transconductance of said second field effect transistor is larger than the transconductance of said first field effect transistor; and wherein a gate width of said second field effect transistor is larger than a gate width of said first field effect transistor.
Claim 2
Dependent Claim
136 words
A low-distortion cascode circuit, comprising: a first field effect transistor and a second field effect transistor, with a drain of said first field effect transistor being connected to a source of said second field effect transistor; a first terminal for receiving a first signal, coupled to a gate electrode of said first field effect transistor; a second terminal for receiving a second signal, coupled to a gate electrode of said second field effect transistor; and a third terminal from which a signal from a drain of said second field effect transistor is output; wherein the transconductance of said second field effect transistor is larger than the transconductance of said first field effect transistor; and wherein a gate width of said second field effect transistor is larger than a gate width of said first field effect transistor.
Claim 3
Dependent Claim
46 words
A low-distortion cascode circuit according to claim 1, wherein said first and second field effect transistors together constitute a dual-gate field effect transistor., and wherein said drain of said first field effect transistor and said source of said second field effect transistor share a common region.
Claim 4
Dependent Claim
20 words
A low-distortion cascode circuit according to claim 2, wherein said common region has a trapezoidal shape as viewed from above.
Claim 5
Dependent Claim
19 words
A low-distortion cascode circuit according to claim 2, wherein said first and second field effect transistors share a channel.
Claim 6
Dependent Claim
23 words
A low-distortion cascode circuit according to claim 2, wherein said first field effect transistor further comprises a plurality of transistors connected in parallel.
Claim 7
Dependent Claim
136 words
A low-distortion cascode circuit comprising: a first field effect transistor and a second field effect transistor, with a drain of said first field effect transistor being connected to a source of said second field effect transistor; a first terminal for receiving a first signal, coupled to a gate electrode of said first field effect transistor; a second terminal for receiving a second signal, coupled to a gate electrode of said second field effect transistor; and a third terminal from which a signal from a drain of said second field effect transistor is output; wherein the transconductance of said second field effect transistor is larger than the transconductance of said first field effect transistor; and wherein a gate length of said second field effect transistor is shorter than a gate length of said first field effect transistor.
Claim 8
Dependent Claim
136 words
A low-distortion cascode circuit comprising: a first field effect transistor and a second field effect transistor, with a drain of said first field effect transistor being connected to a source of said second field effect transistor; a first terminal for receiving a first signal, coupled to a gate electrode of said first field effect transistor; a second terminal for receiving a second signal, coupled to a gate electrode of said second field effect transistor; and a third terminal from which a signal from a drain of said second field effect transistor is output; wherein the transconductance of said second field effect transistor is larger than the transconductance of said first field effect transistor; and wherein a gate length of said second field effect transistor is shorter than a gate length of said first field effect transistor.
Claim 9
Dependent Claim
38 words
A low-distortion cascode circuit according to claim 6, wherein said first and second field effect transistors together constitute a dual-gate field effect transistor, said first gate and said second gate sharing a channel to have different gate widths.