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US5514992A Expired / Lapsed US ⏱️ 0.0 years remaining

Low-distortion cascode circuit

Assignee: Acacia Research Group LLC
•
Filing: 1994-07-12
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Granted: 1996-05-07
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Expires: 2014-07-12
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Abstract

Abstract An electronic circuit is provided with a first field effect transistor and a second field effect transistor, in which a drain of the first field effect transistor connected to a source of the second field effect transistor. This electronic circuit inputs a first signal to a gate electrode of the first field effect transistor, inputs a second signal to a gate electrode of the second field effect transistor and outputs a signal from a drain of the second field effect transistor. This electronic circuit is a cascode circuit related to the current drivability of the second field effect transistor is set to be larger than the current drivability of the first field effect transistor, and there is an effect that third-order or higher order distortion characteristics of a cascode type or dual-gate circuit can be reduced.

Inventors

  • 👤 Satoshi Tanaka
  • 👤 Akishige Nakajima
  • 👤 Eiichi Hase
  • 👤 Chushiro Kusano

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 04:11
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/08; H03F1/22; H03F1/226; H10; H10D; H10D84/00; H10D84/80; H10D84/86

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 136 words
A low-distortion cascode circuit, comprising: a first field effect transistor and a second field effect transistor, with a drain of said first field effect transistor being connected to a source of said second field effect transistor; a first terminal for receiving a first signal, coupled to a gate electrode of said first field effect transistor; a second terminal for receiving a second signal, coupled to a gate electrode of said second field effect transistor; and a third terminal from which a signal from a drain of said second field effect transistor is output; wherein the transconductance of said second field effect transistor is larger than the transconductance of said first field effect transistor; and wherein a gate width of said second field effect transistor is larger than a gate width of said first field effect transistor.
Claim 2
Dependent Claim 136 words
A low-distortion cascode circuit, comprising: a first field effect transistor and a second field effect transistor, with a drain of said first field effect transistor being connected to a source of said second field effect transistor; a first terminal for receiving a first signal, coupled to a gate electrode of said first field effect transistor; a second terminal for receiving a second signal, coupled to a gate electrode of said second field effect transistor; and a third terminal from which a signal from a drain of said second field effect transistor is output; wherein the transconductance of said second field effect transistor is larger than the transconductance of said first field effect transistor; and wherein a gate width of said second field effect transistor is larger than a gate width of said first field effect transistor.
Claim 3
Dependent Claim 46 words
A low-distortion cascode circuit according to claim 1, wherein said first and second field effect transistors together constitute a dual-gate field effect transistor., and wherein said drain of said first field effect transistor and said source of said second field effect transistor share a common region.
Claim 4
Dependent Claim 20 words
A low-distortion cascode circuit according to claim 2, wherein said common region has a trapezoidal shape as viewed from above.
Claim 5
Dependent Claim 19 words
A low-distortion cascode circuit according to claim 2, wherein said first and second field effect transistors share a channel.
Claim 6
Dependent Claim 23 words
A low-distortion cascode circuit according to claim 2, wherein said first field effect transistor further comprises a plurality of transistors connected in parallel.
Claim 7
Dependent Claim 136 words
A low-distortion cascode circuit comprising: a first field effect transistor and a second field effect transistor, with a drain of said first field effect transistor being connected to a source of said second field effect transistor; a first terminal for receiving a first signal, coupled to a gate electrode of said first field effect transistor; a second terminal for receiving a second signal, coupled to a gate electrode of said second field effect transistor; and a third terminal from which a signal from a drain of said second field effect transistor is output; wherein the transconductance of said second field effect transistor is larger than the transconductance of said first field effect transistor; and wherein a gate length of said second field effect transistor is shorter than a gate length of said first field effect transistor.
Claim 8
Dependent Claim 136 words
A low-distortion cascode circuit comprising: a first field effect transistor and a second field effect transistor, with a drain of said first field effect transistor being connected to a source of said second field effect transistor; a first terminal for receiving a first signal, coupled to a gate electrode of said first field effect transistor; a second terminal for receiving a second signal, coupled to a gate electrode of said second field effect transistor; and a third terminal from which a signal from a drain of said second field effect transistor is output; wherein the transconductance of said second field effect transistor is larger than the transconductance of said first field effect transistor; and wherein a gate length of said second field effect transistor is shorter than a gate length of said first field effect transistor.
Claim 9
Dependent Claim 38 words
A low-distortion cascode circuit according to claim 6, wherein said first and second field effect transistors together constitute a dual-gate field effect transistor, said first gate and said second gate sharing a channel to have different gate widths.

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-05-07 1999-11-06 2000-05-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-05-07 2003-11-06 2004-05-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-05-07 2007-11-06 2008-05-07 $7700.00 Window Closed / Lapsed

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