US5083050A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Modified cascode mixer circuit
Assignee: Grumman Corp
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Filing: 1990-11-30
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Granted: 1992-01-21
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Expires: 2010-11-30
Abstract
Abstract In a conventional mixer circuit, in order to have high conversion gain, high input power is needed. For the mixer circuit of the present invention, by incorporating a modified cascode circuit whereby the input stage FET has a higher saturation current than the output stage FET, the same high conversion gain can be achieved. In addition, the present invention mixer circuit requires an input DC power that is considerably less than that needed for the conventional mixer circuit.
Inventors
- 👤 Carmine F. Vasile
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:53
CPC Classifications
H; H03; H03D; H03D7/00; H03D7/12; H03D7/125; H03D9/00; H03D9/06; H03D9/0658; H03D9/0675; H03D2200/00; H03D2200/0001; H03D2200/0025; H03D2200/0027
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
113 words
A mixer circuit, comprising: a first FET having a first signal provided as input to its gate; a second FET having as an input to its gate a second signal, the source of the second FET being grounded, the second FET capable of having a higher saturation current than the first FET to ensure that the first FET has high gain to provide for maximum voltage and current swings at its drain; wherein the first FET has its source connected to the drain of the second FET; and wherein the first signal is mixed with the second signal to provide an output high conversion gain signal at the drain of the first FET.
Claim 2
Dependent Claim
113 words
A mixer circuit, comprising: a first FET having a first signal provided as input to its gate; a second FET having as an input to its gate a second signal, the source of the second FET being grounded, the second FET capable of having a higher saturation current than the first FET to ensure that the first FET has high gain to provide for maximum voltage and current swings at its drain; wherein the first FET has its source connected to the drain of the second FET; and wherein the first signal is mixed with the second signal to provide an output high conversion gain signal at the drain of the first FET.
Claim 3
Dependent Claim
51 words
The mixer circuit of claim 1, wherein the first and second FETs are fabricated onto a semiconductor substrate with each FET having respective source, drain and gate regions; and wherein the second FET has a greater distance separating its drain and source regions on the semiconductor substrate than the first FET.
Claim 4
Dependent Claim
32 words
The mixer circuit of claim 1, wherein the first signal is a RF signal, the second signal is a local oscillator signal and the high conversion gain signal is an IF signal.
Claim 5
Dependent Claim
32 words
The mixer circuit of claim 1, wherein the first signal is a local oscillator signal, the second signal is a RF signal and the high conversion gain signal is an IF signal.
Claim 6
Dependent Claim
60 words
The mixer circuit of claim 1, further comprising: a first filter provided at the gate of the first FET for filtering the first signal; a second filter provided at the gate of the second FET for filtering the second signal; and a third filter provided at the drain of the first FET for filtering the output high conversion gain signal.
Claim 7
Dependent Claim
90 words
A mixer circuit comprising: a cascode circuit having an output stage FET series connected at its source to the drain of an input stage FET, the input stage FET having a saturation current level greater than that of the output stage FET; wherein a first signal is provided to the output stage FET and a second signal is provided to the input stage FET; and wherein the first and second signals are combined in the cascode circuit such that a high conversion gain signal is output from the mixer circuit.
Claim 8
Dependent Claim
90 words
A mixer circuit comprising: a cascode circuit having an output stage FET series connected at its source to the drain of an input stage FET, the input stage FET having a saturation current level greater than that of the output stage FET; wherein a first signal is provided to the output stage FET and a second signal is provided to the input stage FET; and wherein the first and second signals are combined in the cascode circuit such that a high conversion gain signal is output from the mixer circuit.
Claim 9
Dependent Claim
58 words
The mixer circuit of claim 6, wherein the mixer circuit is fabricated onto a semiconductor substrate with each FET having respective source, drain and gate regions; and wherein the input stage FET has a distance separating its source and drain regions which is greater than the distance separating the source and drain regions of the output stage FET.
Claim 10
Dependent Claim
36 words
The mixer circuit of claim 6, further comprising: a first filter for filtering the first signal; a second filter for filtering the second signal; and a third filter for filtering the output high conversion gain signal.
Claim 11
Dependent Claim
32 words
The mixer circuit of claim 6, wherein the first signal is a RF signal, the second signal is a local oscillator signal and the high conversion gain signal is an IF signal.
Claim 12
Dependent Claim
32 words
The mixer circuit of claim 6, wherein the first signal is a local oscillator signal, the second signal is a RF signal and the high conversion gain signal is an IF signal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-20 | 1995-07-22 | 1996-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-20 | 1999-07-22 | 2000-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-20 | 2003-07-22 | 2004-01-21 | $7700.00 | Window Closed / Lapsed |