Patent US5514910A successfully refreshed from Google Patents.
US5514910A
Expired / Lapsed
US
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Semiconductor device having multi-level interconnection structure
Assignee: NEC Electronics Corp
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Filing: 1994-12-27
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Granted: 1996-05-07
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Expires: 2014-12-27
Abstract
Abstract A semiconductor device comprises a silicon via-plug within a fine via-hole in direct contact with an inner wall of the via-hole. A metal silicide layer is formed between an interconnection layer and the silicon plug as well as between the silicon plug and a diffused layer formed in a substrate. Shape defects and excessive stresses formed within a fine via-hole are reduced because the via-hole is filled with the silicon plug substantially without a metallic film or a metal silicide film on a sidewall. The metal silicide film is formed by a heat treatment through silicidation reaction.
Inventors
- 👤 Kuniaki Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:05
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/40; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10W20/021; H10W20/031; H10W20/056; H10W20/063; H10W20/0633; H10W20/064; H10W20/066; H10W20/41; H10W20/44; H10W20/4462
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
125 words
A semiconductor device comprising: a silicon substrate; a diffused region formed in said silicon substrate; an insulating film formed on said substrate and having a via-hole above said diffused region; an interconnection layer formed on said insulating film; a silicon plug formed within said via-hole in direct contact with an inner wall of said via-hole; and a first conductive portion made of a first metal silicide and formed between said diffused region and said silicon plug, said interconnection layer having a second conductive portion made of a second metal silicide which is in direct contact with said silicon plug, said second conductive portion being formed from a reaction between a metal and silicon and being made of a same material as said first metal silicide.
Claim 2
Dependent Claim
125 words
A semiconductor device comprising: a silicon substrate; a diffused region formed in said silicon substrate; an insulating film formed on said substrate and having a via-hole above said diffused region; an interconnection layer formed on said insulating film; a silicon plug formed within said via-hole in direct contact with an inner wall of said via-hole; and a first conductive portion made of a first metal silicide and formed between said diffused region and said silicon plug, said interconnection layer having a second conductive portion made of a second metal silicide which is in direct contact with said silicon plug, said second conductive portion being formed from a reaction between a metal and silicon and being made of a same material as said first metal silicide.
Claim 3
Dependent Claim
29 words
A semiconductor device as defined in claim 1 wherein said metal silicide contains a metal selected from a group consisting of Ti, Zr, Hf, V, Mo, Co and Pt.
Claim 4
Dependent Claim
22 words
A semiconductor device as defined in claim 1 wherein substantially all of said interconnection layer is made of said second metal silicide.
Claim 5
Dependent Claim
22 words
A semiconductor device as defined in claim 1 wherein said first conductive portion is formed within said via-hole beneath said silicon plug.
Claim 6
Dependent Claim
119 words
A semiconductor device comprising: a substrate; a first interconnection layer formed overlying said substrate; an interlayer insulating film formed on said interconnection layer and having a via-hole exposing a portion of said first interconnection layer; a second interconnection layer formed on said interlayer insulating film and having a first portion disposed above said interlayer insulating film and a second portion disposed within said via-hole; and a silicon plug formed within said via-hole in direct contact with an inner wall of said via-hole, each of said first portion and said second portion being made of a metal silicide and in direct contact with said silicon plug, said second portion being disposed between said silicon plug and said first interconnection layer.
Claim 7
Dependent Claim
119 words
A semiconductor device comprising: a substrate; a first interconnection layer formed overlying said substrate; an interlayer insulating film formed on said interconnection layer and having a via-hole exposing a portion of said first interconnection layer; a second interconnection layer formed on said interlayer insulating film and having a first portion disposed above said interlayer insulating film and a second portion disposed within said via-hole; and a silicon plug formed within said via-hole in direct contact with an inner wall of said via-hole, each of said first portion and said second portion being made of a metal silicide and in direct contact with said silicon plug, said second portion being disposed between said silicon plug and said first interconnection layer.
Claim 8
Dependent Claim
29 words
A semiconductor device as defined in claim 5 wherein said metal silicide contains a metal selected from a group consisting of Ti, Zr, Hf, V, Mo, Co and Pt.
Claim 9
Dependent Claim
25 words
A semiconductor device as defined in claim 5 wherein at least one of said first and second interconnection layers is made of said metal silicide.
Claim 10
Dependent Claim
31 words
A semiconductor device as defined in claim 1 wherein said silicon plug has a top portion in direct contact with said interconnection layer at a side surface of the top portion.
Claim 11
Dependent Claim
32 words
A semiconductor device as defined in claim 5 wherein said silicon plug has a top portion in direct contact with said second interconnection layer at a side surface of the top portion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-07 | 1999-11-06 | 2000-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-07 | 2003-11-06 | 2004-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-07 | 2007-11-06 | 2008-05-07 | $7700.00 | Window Closed / Lapsed |