Abstract According to this invention, after a semiconductor nitride film is formed on the entire surface of a semiconductor memory device, the semiconductor nitride film on a memory cell portion is removed. After a semiconductor oxide-based film is formed as an interlayer insulator on the entire surface of the semiconductor memory device, the semiconductor oxide-based film on a peripheral circuit portion is removed using the semiconductor nitride film as a stopper. For this reason, a shallow contact hole is formed in the peripheral circuit portion, and highly reliable wiring can be obtained. In addition, since hydrogen can be supplied to a surface of a semiconductor substrate in the memory cell portion by hydrogen annealing, an interface state on the surface can be eliminated, and the data retention characteristics of the memory cells can be improved.
A semiconductor memory device comprising, source and drain regions formed in a substrate, a gate oxide insulator formed on said substrate between said source and drain, a gate electrode on said gate oxide insulator between said source and drain, a first polysilicon film on said source, an ONO film on said first polysilicon film, a second polysilicon film on said ONO film, another insulation film on said second polysilicon film, and a silicon nitride film on said another insulation film at regions which extend laterally from said ONO film and which is not over said source or said drain regions, and wherein said first and second polysilicon films form electrodes of a capacitor.
Claim 2
Dependent Claim
113 words
A semiconductor memory device comprising, source and drain regions formed in a substrate, a gate oxide insulator formed on said substrate between said source and drain, a gate electrode on said gate oxide insulator between said source and drain, a first polysilicon film on said source, an ONO film on said first polysilicon film, a second polysilicon film on said ONO film, another insulation film on said second polysilicon film, and a silicon nitride film on said another insulation film at regions which extend laterally from said ONO film and which is not over said source or said drain regions, and wherein said first and second polysilicon films form electrodes of a capacitor.