Patent US5511608A successfully refreshed from Google Patents.
US5511608A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Clampless vacuum heat transfer station
Assignee: Novellus Systems Inc
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Filing: 1995-01-04
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Granted: 1996-04-30
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Expires: 2015-01-04
Abstract
Abstract A clampless heat exchange station for a semiconductor wafer for use in a vacuum chamber, at pressures from 2 Torr to 30 Torr using commercial grade inert gas. The heat exchange chuck has apertures therethrough in the region where the wafer is to be mounted to serve as a miniature plenum gas to provide equal pressure along the bottom and top sides of the wafer. This configuration avoids chipping and particle deposition and provides improved heat transfer rate and wafer temperature uniformity.
Inventors
- 👤 Trace L. Boyd
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:49
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/50; H10P72/04; H10P72/0431; H10P72/0432
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
324 words
A thermal transfer apparatus for exchanging heat with a first surface broad face area W of a semiconductor wafer comprising: (a) a vacuum chamber, said vacuum chamber including a base and enclosing walls having a door opening and a gate means for permitting introduction into and removal of said semiconductor wafer from said vacuum chamber, said gate means including means to vacuum seal said gate means to said door opening when said gate means is forced against said door opening, said vacuum chamber further including means to pump down the pressure in said chamber to vacuum pressures; (b) a heat transfer plate, said heat transfer plate being mounted in said vacuum chamber, said heat transfer plate having first and second opposed surfaces, said heat transfer plate first surface having a planar region of area A for receiving and supporting said first surface of said semiconductor wafer, said planar region being flat within 0.010 inches, said area A being larger than said area W of said semiconductor wafer, said planar region for receiving and supporting said semiconductor wafer having a vent means therein, said vent means being a passage so that gases in said vacuum chamber are able to freely diffuse through said vent so that gases near said first and second opposed surfaces of said heat transfer plate are in free laminar gas communication at all times including those times when said semiconductive wafer is placed in said planar region for receiving and supporting said first surface of said semiconductive wafer; (c) a source of inert gas pressure, conduit means connected to said source of inert gas pressure and to said vacuum chamber to provide a metered flow of said inert gas to said vacuum chamber to provide a chamber pressure P, where P>2 Torr; and (d) means connected to said heat transfer plate to provide heat energy to raise the temperature or to extract heat energy to lower the temperature of said wafer.
Claim 2
Dependent Claim
324 words
A thermal transfer apparatus for exchanging heat with a first surface broad face area W of a semiconductor wafer comprising: (a) a vacuum chamber, said vacuum chamber including a base and enclosing walls having a door opening and a gate means for permitting introduction into and removal of said semiconductor wafer from said vacuum chamber, said gate means including means to vacuum seal said gate means to said door opening when said gate means is forced against said door opening, said vacuum chamber further including means to pump down the pressure in said chamber to vacuum pressures; (b) a heat transfer plate, said heat transfer plate being mounted in said vacuum chamber, said heat transfer plate having first and second opposed surfaces, said heat transfer plate first surface having a planar region of area A for receiving and supporting said first surface of said semiconductor wafer, said planar region being flat within 0.010 inches, said area A being larger than said area W of said semiconductor wafer, said planar region for receiving and supporting said semiconductor wafer having a vent means therein, said vent means being a passage so that gases in said vacuum chamber are able to freely diffuse through said vent so that gases near said first and second opposed surfaces of said heat transfer plate are in free laminar gas communication at all times including those times when said semiconductive wafer is placed in said planar region for receiving and supporting said first surface of said semiconductive wafer; (c) a source of inert gas pressure, conduit means connected to said source of inert gas pressure and to said vacuum chamber to provide a metered flow of said inert gas to said vacuum chamber to provide a chamber pressure P, where P>2 Torr; and (d) means connected to said heat transfer plate to provide heat energy to raise the temperature or to extract heat energy to lower the temperature of said wafer.
Claim 3
Dependent Claim
54 words
The apparatus of claim 1 wherein said vent means of said planar region of said first surface of said heat transfer plate is N distributed holes, each said hole having a cross sectional area A n where N is an integer equal to or greater than 1 and further where the ratio of ##EQU2##
Claim 4
Dependent Claim
34 words
The apparatus of claim 2 wherein said heat transfer plate region for receiving said first surface of said semiconductive wafer includes a lateral motion retainer at said first surface of said heat transfer plate.
Claim 5
Dependent Claim
25 words
The apparatus of claim 3 wherein said lateral motion retainer is a bevel around the edge of said planar region extending above said planar region.
Claim 6
Dependent Claim
20 words
The apparatus of claim 3 wherein said lateral motion retainer is a plurality of tabs extending above said planar region.
Claim 7
Dependent Claim
10 words
The apparatus of claim 2 wherein said N equals 1.
Claim 8
Dependent Claim
31 words
The apparatus of claim 1 wherein said heat transfer plate is supported from said vacuum chamber base by a support means attached to said second surface of said heat transfer plate.
Claim 9
Dependent Claim
26 words
The apparatus of claim 2 wherein said heat transfer plate includes a source of heat, said source of heat comprising a nichrome wound wire heating coil.
Claim 10
Dependent Claim
25 words
The apparatus of claim 7 wherein said heat transfer plate includes cooling channels, said cooling channels being conduits for receiving a flowing liquid cooling fluid.
Claim 11
Dependent Claim
239 words
In a vacuum chamber, a method for exchanging thermal energy between a heat transfer plate having a top surface and bottom surface and a semiconductor wafer having a broad top and bottom surface, where said bottom surface of said wafer has a roughness on the order of 125 micro inches comprising: providing said top surface of said heat transfer plate with a planar machined surface region which is flat to within 0.010 inches, and further providing said planar region with a vent allowing free gas communication through said vent between the volume bordering said bottom and said top surfaces of said heat transfer plate; without external clamping forces, placing said bottom surface of said semiconductor wafer directly upon said planar machined surface region of said heat transfer plate having said vent so that there is no gap therebetween other than the backside roughness interstices so that the region between said semiconductor wafer and said machine surface remains in gas communication with said bottom surface of said heat transfer plate even when said semiconductor wafer is placed upon said planar region on said heat transfer plate top surface; pressuring said vacuum chamber with an inert gas at a pressure P where 30 Torr>P>2 Torr; transferring heat from said heat transfer plate to or from said semiconductive wafer by collisions of said gas molecules of said inert gas with said semiconductive wafer and said heat transfer plate in said contact region.
Claim 12
Dependent Claim
239 words
In a vacuum chamber, a method for exchanging thermal energy between a heat transfer plate having a top surface and bottom surface and a semiconductor wafer having a broad top and bottom surface, where said bottom surface of said wafer has a roughness on the order of 125 micro inches comprising: providing said top surface of said heat transfer plate with a planar machined surface region which is flat to within 0.010 inches, and further providing said planar region with a vent allowing free gas communication through said vent between the volume bordering said bottom and said top surfaces of said heat transfer plate; without external clamping forces, placing said bottom surface of said semiconductor wafer directly upon said planar machined surface region of said heat transfer plate having said vent so that there is no gap therebetween other than the backside roughness interstices so that the region between said semiconductor wafer and said machine surface remains in gas communication with said bottom surface of said heat transfer plate even when said semiconductor wafer is placed upon said planar region on said heat transfer plate top surface; pressuring said vacuum chamber with an inert gas at a pressure P where 30 Torr>P>2 Torr; transferring heat from said heat transfer plate to or from said semiconductive wafer by collisions of said gas molecules of said inert gas with said semiconductive wafer and said heat transfer plate in said contact region.
Claim 13
Dependent Claim
216 words
In a vacuum chamber, a method for exchanging thermal energy between a heat transfer plate having a top and bottom surface and a semiconductive wafer having a broad area top and bottom in a vacuum chamber comprising: providing said heat transfer plate with a region having a plurality of discrete controlled diameter apertures which pass through said heat transfer plate allowing gas communication through said apertures from said bottom to top surface of said heat transfer plate; placing said semiconductor wafer bottom directly upon said top surface of said heat transfer plate in said aperture region of said heat transfer plate without any gap therebetween other than roughness interticesand without external clamping forces therebetween other than the weight of said semiconductive wafer, thereby providing a contact region between said semiconductive wafer and said aperture surface which is in free gas communication with said chamber interior; pressuring said vacuum chamber with an inert gas at a pressure P where 30 Torr>P>2 Torr; and cooling said heat treating plate by flowing a cooling fluid in conduits embedded in said heat treating plate; and cooling said semiconductor wafer by transferring heat from said semiconductor wafer to said heat transfer plate by collisions of said gas molecules with said semiconductor wafer and said heat transfer plate in said contact region.
Claim 14
Dependent Claim
216 words
In a vacuum chamber, a method for exchanging thermal energy between a heat transfer plate having a top and bottom surface and a semiconductive wafer having a broad area top and bottom in a vacuum chamber comprising: providing said heat transfer plate with a region having a plurality of discrete controlled diameter apertures which pass through said heat transfer plate allowing gas communication through said apertures from said bottom to top surface of said heat transfer plate; placing said semiconductor wafer bottom directly upon said top surface of said heat transfer plate in said aperture region of said heat transfer plate without any gap therebetween other than roughness interticesand without external clamping forces therebetween other than the weight of said semiconductive wafer, thereby providing a contact region between said semiconductive wafer and said aperture surface which is in free gas communication with said chamber interior; pressuring said vacuum chamber with an inert gas at a pressure P where 30 Torr>P>2 Torr; and cooling said heat treating plate by flowing a cooling fluid in conduits embedded in said heat treating plate; and cooling said semiconductor wafer by transferring heat from said semiconductor wafer to said heat transfer plate by collisions of said gas molecules with said semiconductor wafer and said heat transfer plate in said contact region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-30 | 1999-10-30 | 2000-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-30 | 2003-10-30 | 2004-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-30 | 2007-10-30 | 2008-04-30 | $7700.00 | Window Closed / Lapsed |