Magnetoresistive sensor having exchange-coupled stabilization for transverse bias layer

Claim 2

A magnetoresistive read sensor of the type having a ferromagnetic layer of nickel-iron-niobium separated from a magnetoresistive layer by a nonmagnetic spacer layer, said ferromagnetic layer for providing a transverse bias magnetic field in said magnetoresistive layer, wherein an antiferromagnetic layer of nickel-oxide is formed in direct contact with said layer of ferromagnetic material for inducing a magnetic field in said ferromagnetic layer.

Claim 3

A magnetoresistive read sensor as in claim 1 wherein said magnetoresistive layer comprises nickel-iron.

Claim 4

A magnetoresistive read sensor as in claim 1 wherein said nonmagnetic spacer layer comprises tantalum.

Claim 5

A magnetoresistive sensor having end regions separated by a central region, comprising: a transverse bias layer of a first ferromagnetic material; a magnetoresistive layer of a second ferromagnetic material deposited over said transverse bias layer, said magnetoresistive layer separated from said transverse bias layer by a nonmagnetic spacer layer, said magnetoresistive layer extending over said central region and said end regions; a longitudinal bias layer of a first antiferromagnetic material deposited in direct contact with said magnetoresistive layer in at least said end regions, said longitudinal bias layer for inducing an exchange-coupled longitudinal bias field in said magnetoresistive layer; and a stabilization layer of a second antiferromagnetic material underlaying and in direct contact with said transverse bias layer, said stabilization layer for inducing an exchange-coupled magnetic field in said transverse bias layer.

Claim 6

A magnetoresistive sensor having end regions separated by a central region, comprising: a transverse bias layer of a first ferromagnetic material; a magnetoresistive layer of a second ferromagnetic material deposited over said transverse bias layer, said magnetoresistive layer separated from said transverse bias layer by a nonmagnetic spacer layer, said magnetoresistive layer extending over said central region and said end regions; a longitudinal bias layer of a first antiferromagnetic material deposited in direct contact with said magnetoresistive layer in at least said end regions, said longitudinal bias layer for inducing an exchange-coupled longitudinal bias field in said magnetoresistive layer; and a stabilization layer of a second antiferromagnetic material underlaying and in direct contact with said transverse bias layer, said stabilization layer for inducing an exchange-coupled magnetic field in said transverse bias layer.

Claim 7

A magnetoresistive sensor as in claim 4 wherein said first and second antiferromagnetic materials have different Neel temperatures.

Claim 8

A magnetoresistive read sensor as in claim 4 wherein said second antiferromagnetic material comprises nickel-oxide and said first antiferromagnetic material comprises a nickel-manganese alloy.

Claim 9

A magnetoresistive sensor as in claim 4 further including electrically conductive leads deposited over said end regions of said magnetoresistive layer.

Claim 10

A magnetoresistive read sensor as in claim 4 wherein said magnetoresistive layer is an alloy comprising nickel and iron.

Claim 11

A magnetoresistive read sensor as in claim 4 further comprising a magnetic shield layer formed on a substrate, said stabilization layer overlaying said magnetic shield layer and electrically insulating said transverse bias layer from said magnetic shield layer.

Claim 12

A magnetoresistive read sensor as in claim 4 wherein said second antiferromagnetic material comprises nickel oxide.

Claim 13

A magnetoresistive sensor as in claim 4 further comprising a heat sink layer underlaying and in contact with said stabilization layer for conducting heat away from said stabilization layer, said heat sink layer being of a material having a high thermal conductivity.

Claim 14

A magnetoresistive sensor as in claim 11 wherein said heat sink layer comprises a metal having a high thermal conductivity.

Claim 15

A magnetoresistive sensor as in claim 12 wherein said heat sink layer is of tantalum.

Claim 16

A magnetoresistive sensor as in claim 11 wherein said stabilization layer and said heat sink layer are formed in said sensor central region only.

Claim 17

A magnetic storage system comprising: a magnetic storage medium having a plurality of tracks for recording of data; a magnetic transducer maintained in a closely spaced position relative to said magnetic storage medium during relative motion between said magnetic transducer and said magnetic storage medium, said magnetic transducer including a magnetoresistive sensor having end regions separated by a central region and formed on a substrate, said magnetoresistive sensor comprising: a transverse bias layer of ferromagnetic material separated from a magnetoresistive layer by a nonmagnetic spacer layer, said transverse bias layer for providing a transverse bias magnetic field in said magnetoresistive layer, wherein a stabilization layer of a first antiferromagnetic material is in direct contact with said transverse bias layer in at least said central region for inducing an exchange-coupled magnetic field in said transverse bias layer, a longitudinal bias layer of a second antiferromagnetic material deposited in direct contact with said magnetoresistive layer in at least said end regions, said longitudinal bias layer for inducing an exchange-coupled longitudinal bias field in said magnetoresistive layer; actuator means coupled to said magnetic transducer for moving said magnetic transducer to selected tracks on said magnetic storage medium; and means coupled to said magnetoresistive sensor for detecting resistance changes in said magnetoresistive material responsive to magnetic fields representative of data bits recorded in said magnetic storage medium intercepted by said magnetoresistive sensor.

Claim 18

A magnetic storage system comprising: a magnetic storage medium having a plurality of tracks for recording of data; a magnetic transducer maintained in a closely spaced position relative to said magnetic storage medium during relative motion between said magnetic transducer and said magnetic storage medium, said magnetic transducer including a magnetoresistive sensor having end regions separated by a central region and formed on a substrate, said magnetoresistive sensor comprising: a transverse bias layer of ferromagnetic material separated from a magnetoresistive layer by a nonmagnetic spacer layer, said transverse bias layer for providing a transverse bias magnetic field in said magnetoresistive layer, wherein a stabilization layer of a first antiferromagnetic material is in direct contact with said transverse bias layer in at least said central region for inducing an exchange-coupled magnetic field in said transverse bias layer, a longitudinal bias layer of a second antiferromagnetic material deposited in direct contact with said magnetoresistive layer in at least said end regions, said longitudinal bias layer for inducing an exchange-coupled longitudinal bias field in said magnetoresistive layer; actuator means coupled to said magnetic transducer for moving said magnetic transducer to selected tracks on said magnetic storage medium; and means coupled to said magnetoresistive sensor for detecting resistance changes in said magnetoresistive material responsive to magnetic fields representative of data bits recorded in said magnetic storage medium intercepted by said magnetoresistive sensor.

Claim 19

A magnetic storage system as in claim 15 wherein said magnetoresistive layer extends over said magnetoresistive sensor central and end regions, and further including electrically conductive leads deposited over said end regions of said magnetoresistive layer.

Claim 20

A magnetic storage system as in claim 15 wherein said first antiferromagnetic material comprises nickel-oxide and said second antiferromagnetic material comprises a nickel-manganese alloy.

Claim 21

A magnetic storage system as in claim 15 further comprising a heat sink layer underlaying and in contact with said stabilization layer for conducting heat away from said stabilization layer, said heat sink being of a material having a high thermal conductivity.

Claim 22

A magnetic storage system as in claim 18 wherein said heat sink layer is of tantalum.

Claim 23

A magnetic storage system as in claim 18 wherein said magnetoresistive sensor comprises end regions separated by a central end region, said stabilization layer and said heat sink layer being formed in said central region only.

Claim 24

A magnetoresistive sensor having end regions separated by a central region, comprising: a stabilization layer of an antiferromagnetic material formed on a substrate and extending over at least said central region; a transverse bias layer of a ferromagnetic material overlaying and in contact with said stabilization layer, said transverse layer extending over said central region only, said stabilization layer for inducing an exchange-coupled magnetic field in said transverse bias layer; a magnetoresistive layer overlaying and separated from said transverse bias layer by a nonmagnetic spacer layer, said magnetoresistive layer extending over said central region only; a heat sink layer of a material having a high thermal conductivity, said heat sink layer underlaying and in contact with said stabilization layer; and a longitudinal bias layer formed in said sensor end regions only for providing a longitudinal magnetic bias field in said magnetoresistive layer.

Claim 25

A magnetoresistive sensor having end regions separated by a central region, comprising: a stabilization layer of an antiferromagnetic material formed on a substrate and extending over at least said central region; a transverse bias layer of a ferromagnetic material overlaying and in contact with said stabilization layer, said transverse layer extending over said central region only, said stabilization layer for inducing an exchange-coupled magnetic field in said transverse bias layer; a magnetoresistive layer overlaying and separated from said transverse bias layer by a nonmagnetic spacer layer, said magnetoresistive layer extending over said central region only; a heat sink layer of a material having a high thermal conductivity, said heat sink layer underlaying and in contact with said stabilization layer; and a longitudinal bias layer formed in said sensor end regions only for providing a longitudinal magnetic bias field in said magnetoresistive layer.

Claim 26

A magnetoresistive sensor as in claim 21 wherein said heat sink layer comprise tantalum.

Claim 27

A magnetoresistive sensor as in claim 21 wherein said longitudinal bias layer comprises a high coercivity material selected from the group consisting of cobalt-platinum-chromium, cobalt-nickel-chromium and cobalt-chromium.

Claim 28

A magnetoresistive sensor as in claim 21 wherein said stabilization layer comprises nickel oxide.

Claim 29

A magnetoresistive sensor as in claim 21 wherein said transverse bias layer comprises a material selected from the group consisting of nickel-ironniobium, nickel-iron-rhodium and nickel-iron-chromium.