← Back to Patent Explorer
US5508240A Expired / Lapsed US ⏱️ 0.0 years remaining

Aluminum nitride sintered body and method for manufacturing the same

Assignee: Toshiba Corp
•
Filing: 1994-05-20
•
Granted: 1996-04-16
•
Expires: 2014-05-20
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract An aluminum nitride sintered body containing 1 to 10% by weight of an oxide of at least one element selected from a group consisting of a group IIIa element, Ca, Sr and Ba, the concentration of a Si component in the sintered body is 0.01 to 0.2% by weight and three-point bending strength is 490 MPa or more. The sintered body is characterized in that a crystal structure composed of aluminum nitride crystal grains is formed, the fracture toughness is 2.8 MN/m 3/2 or more, the three-point bending strength is 490 MPa or more and the thermal conductivity is 150 W/m·k or more. In the crystal structure, the distribution of the crystal grain distribution is adequately adjusted. The growth of the AlN sintered body is restricted, thus the structure of the sintered body is fined, and the distribution of the crystal grain size is controlled adequately so that the strength and the fracture toughness of the sintered body are improved. Moreover, the mechanical Strength and fracture toughness are improved without impairing the heat radiating characteristics of the aluminum nitride.

Inventors

  • 👤 Michiyasu Komatsu
  • 👤 Takao Shirai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 12:01
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/581

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 194 words
An aluminum nitride sintered body comprising: a crystal structure composed of crystal grains of aluminum nitride, wherein said crystal structure has a ratio of crystal grains having a grain size of less than 1 μm of 10% by volume or less, a ratio of crystal grains having a grain size of 1 μm or more and less than 2 μm of 10 to 20% by volume, a ratio of crystal grains having a grain size of 2 μm or more and less than 3 μm of 10 to 30% by volume, a ratio of crystal grains having a grain size of 3 μm or more and less than 4 μm of 30 to 50% by volume, a ratio of crystal grains having a grain size of 4 μm or more and less than 5 μm of 5 to 10% by volume, and a ratio of crystal grains having a grain size of 5 μm or more of 10% by volume or less; wherein said sintered body has a fracture toughness of 2.8 MN/m 3/2 or more, a three-point bending strength of 490 MPa or more, and a thermal conductivity of 150 W/m·k or more.
Claim 2
Dependent Claim 194 words
An aluminum nitride sintered body comprising: a crystal structure composed of crystal grains of aluminum nitride, wherein said crystal structure has a ratio of crystal grains having a grain size of less than 1 μm of 10% by volume or less, a ratio of crystal grains having a grain size of 1 μm or more and less than 2 μm of 10 to 20% by volume, a ratio of crystal grains having a grain size of 2 μm or more and less than 3 μm of 10 to 30% by volume, a ratio of crystal grains having a grain size of 3 μm or more and less than 4 μm of 30 to 50% by volume, a ratio of crystal grains having a grain size of 4 μm or more and less than 5 μm of 5 to 10% by volume, and a ratio of crystal grains having a grain size of 5 μm or more of 10% by volume or less; wherein said sintered body has a fracture toughness of 2.8 MN/m 3/2 or more, a three-point bending strength of 490 MPa or more, and a thermal conductivity of 150 W/m·k or more.
Claim 3
Dependent Claim 79 words
An aluminum nitride sintered body according to claim 1, wherein an oxide of at least one element selected from the group consisting of group IIIa elements, Ca, Sr, and Ba is present in an amount of 1 to 10% by weight; an Si component is present in said sintered body in an amount of 0.01 to 0.2% by weight, and Al 2 O 3 is present in said sintered body in an amount of 1.5% by weight or less.
Claim 4
Dependent Claim 50 words
An aluminum nitride sintered body according to claim 2, wherein said Si component is present as at least one type of silicon compound selected from the group consisting of SiO 2 , Si 3 N 4 , SiC, Si 3 N 2 O, β-Sialon, α-Sialon, and poly-type aluminum nitride (Al--Si--O--N).
Claim 5
Dependent Claim 47 words
An aluminum nitride sintered body according to claim 1, wherein at least one type of metal element selected from the group consisting of Ti, Fe, Ni, Cr, Co, Li, and Mg is present in an amount of 0.05 to 0.5% by weight calculated as an oxide thereof.
Claim 6
Dependent Claim 34 words
An aluminum nitride sintered body according to claim 1, having positive ions of impurities other than a group IIIa element, Ca, Sr, and Ba present in an amount of 0.2% by weight or less.
Claim 7
Dependent Claim 22 words
An aluminum nitride sintered body according to claim 1, wherein said sintered body further comprises 0.05 to 0.5% by weight of Fe.
Claim 8
Dependent Claim 23 words
An aluminum nitride sintered body according to claim 1, wherein said sintered body has an average grain size of 1 to 4 μm.

References Cited (Backward Citations)

DE3337630A1 Cited
US4997798A Cited
US5001089A Cited
EP0237072A2 Cited
US4908173A Cited
US5077245A Cited
EP0287841A2 Cited
US4833108A Cited
US5219803A Cited
US5294388A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-04-16 1999-10-16 2000-04-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-04-16 2003-10-16 2004-04-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-04-16 2007-10-16 2008-04-16 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag