US5508229A
Expired / Lapsed
US
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Method for forming solder bumps in semiconductor devices
Assignee: National Semiconductor Corp
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Filing: 1994-05-24
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Granted: 1996-04-16
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Expires: 2014-05-24
Abstract
Abstract In accordance with the present invention, a method for forming solder bumps begins with a wafer that has been patterned with bond pad areas. A plurality of distinct metal layers are then deposited over the wafer. Subsequently, solder is deposited by way of plating through a mask over the metal layers in the bond pad areas. After the removal of the mask, the metal layers outside of the soldered areas are etched using a dilute phosphoric acid solution, which includes phosphoric acid, acetic acid, hydrogen peroxide, and deionized water. By the use of this solution, the metal layers are removed without attacking the soldered areas. Thus, a pattern of solder bumps are formed. The metal layers include distinct layers of aluminum, nickel-vanadium, and copper. Alternatively, the aluminum layer is eliminated. Further, the dilute phosphoric acid solution has approximately 10% phosphoric acid, 84% deionized water, 5% acetic acid, and 1% hydrogen peroxide by volume, which is used for the etching step preferably performed at a temperature of approximately 70 DEG C. for a period between about 60 to 600 seconds. With the present invention, a single etchant, a dilute phosphoric acid solution, is used to remove the deposited metal layers outside of the soldered areas. This increases the efficiency of forming solder bumps of high integrity, which are then suitable for flip chip applications.
Inventors
- 👤 Mark H. Baker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:31
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; C; C23; C23F; C23F1/00; C23F1/10; C23F1/14; C23F1/16; C23F1/18; C23F1/20; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/019; H10W72/20; H10W72/251; H10W72/252; H10W72/29; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/131
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
128 words
A method for forming solder bumps on a substrate, said substrate including bond pad areas, the method comprising the steps of: depositing a plurality of distinct metal layers over said substrate the distinct metal layers being formed from different materials and including at least two layers formed from materials selected from the group consisting of aluminum, copper, and a nickel-vanadium alloy; depositing solder through a mask over said metal layers in said bond pad areas; removing said mask; and etching said metal layers outside of said solder with a dilute phosphoric acid solution consisting of essentially of phosphoric acid, deionized (DI) water, acetic acid, and hydrogen peroxide that does not attack said solder to leave a series of solder bumps on said substrate in said bond pad areas.
Claim 2
Independent Claim
128 words
A method for forming solder bumps on a substrate, said substrate including bond pad areas, the method comprising the steps of: depositing a plurality of distinct metal layers over said substrate the distinct metal layers being formed from different materials and including at least two layers formed from materials selected from the group consisting of aluminum, copper, and a nickel-vanadium alloy; depositing solder through a mask over said metal layers in said bond pad areas; removing said mask; and etching said metal layers outside of said solder with a dilute phosphoric acid solution consisting of essentially of phosphoric acid, deionized (DI) water, acetic acid, and hydrogen peroxide that does not attack said solder to leave a series of solder bumps on said substrate in said bond pad areas.
Claim 3
Independent Claim
183 words
A method for forming solder bumps on a substrate, said substrate including bond pad areas, the method comprising the steps of: depositing a plurality of distinct metal layers over said substrate, the distinct metal layers being formed from different materials and including at least two layers formed from materials selected from the group consisting of aluminum, copper, and a nickel-vanadium alloy; depositing solder through a mask over said metal layers in said bond pad areas; removing said mask; and etching said metal layers outside of said solder with a dilute phosphoric acid solution consisting essentially of phosphoric acid, deionized (DI) water, acetic acid, and hydrogen peroxide that does not attack said solder to leave a series of solder bumps on said substrate in said bond pad areas, wherein said dilute phosphoric acid solution includes in a range of approximately 1 to 25% by volume phosphoric acid, in a range of approximately 63 to 98% by volume DI water, in a range of approximately 1 to 10% by volume acetic acid, and in a range of approximately 0.1 to 2% by volume hydrogen peroxide.
Claim 4
Independent Claim
183 words
A method for forming solder bumps on a substrate, said substrate including bond pad areas, the method comprising the steps of: depositing a plurality of distinct metal layers over said substrate, the distinct metal layers being formed from different materials and including at least two layers formed from materials selected from the group consisting of aluminum, copper, and a nickel-vanadium alloy; depositing solder through a mask over said metal layers in said bond pad areas; removing said mask; and etching said metal layers outside of said solder with a dilute phosphoric acid solution consisting essentially of phosphoric acid, deionized (DI) water, acetic acid, and hydrogen peroxide that does not attack said solder to leave a series of solder bumps on said substrate in said bond pad areas, wherein said dilute phosphoric acid solution includes in a range of approximately 1 to 25% by volume phosphoric acid, in a range of approximately 63 to 98% by volume DI water, in a range of approximately 1 to 10% by volume acetic acid, and in a range of approximately 0.1 to 2% by volume hydrogen peroxide.
Claim 5
Dependent Claim
19 words
A method as recited in claim 2 wherein said dilute phosphoric acid solution is applied at approximately 70° C.
Claim 6
Dependent Claim
25 words
A method as recited in claim 3 wherein said dilute phosphoric acid solution is applied for approximately in the range of 90 to 600 seconds.
Claim 7
Dependent Claim
26 words
A method as recited in claim 1 wherein said dilute phosphoric acid solution includes in the range of approximately 1 to 25% by volume phosphoric acid.
Claim 8
Dependent Claim
20 words
A method as recited in claim 5 wherein said dilute phosphoric acid solution includes approximately 10% by volume phosphoric acid.
Claim 9
Dependent Claim
26 words
A method as recited in claim 5 wherein said dilute phosphoric acid solution includes in the range of approximately 63 to 98% by volume DI water.
Claim 10
Dependent Claim
20 words
A method as recited in claim 7 wherein said dilute phosphoric acid solution includes approximately 84% by volume DI water.
Claim 11
Dependent Claim
26 words
A method as recited in claim 7 wherein said dilute phosphoric acid solution includes in the range of approximately 1 to 10% by volume acetic acid.
Claim 12
Dependent Claim
20 words
A method as recited in claim 9 wherein said dilute phosphoric acid solution includes approximately 5% by volume acetic acid.
Claim 13
Dependent Claim
20 words
A method as recited in claim 2 wherein said dilute phosphoric acid solution includes approximately 1% by volume hydrogen peroxide.
Claim 14
Independent Claim
23 words
A method as recited 1 wherein said metal layers include a layer of aluminum, a layer of nickel-vanadium, and a layer of copper.
Claim 15
Independent Claim
23 words
A method as recited 1 wherein said metal layers include a layer of aluminum, a layer of nickel-vanadium, and a layer of copper.
Claim 16
Independent Claim
19 words
A method as recited 1 wherein said metal layers include a layer of nickel-vanadium and a layer of copper.
Claim 17
Independent Claim
19 words
A method as recited 1 wherein said metal layers include a layer of nickel-vanadium and a layer of copper.
Claim 18
Dependent Claim
44 words
A method as recited in claim 1 further comprising a top layer of gold formed over the plurality of distinct metal layers, and wherein said gold layer is etched with potassium cyanide prior to said step of etching with said dilute phosphoric acid solution.
Claim 19
Independent Claim
164 words
A method for forming solder bumps over a substrate having a pattern of bond pad areas and a passivation layer deposited over said substrate and patterned to have openings in said bond pad areas, the method comprising the steps of: depositing a plurality of distinct metal layers over the substrate, the distinct metal layers being formed from different materials and including at least two layers formed from materials selected from the group consisting of aluminum, copper, and nickel-vanadium alloy; depositing a photoresistive layer over said metal layers: developing openings in said photoresistive layer over said bond pad areas on said substrate; plating solder over said metal layers into said openings; removing said photoresistive layer; and etching exposed portions of the metal layers from said substrate outside of said solder with a dilute phosphoric acid solution consisting essentially of phosphoric acid deionized (DI) water, acetic acid, and hydrogen peroxide that does not attack said solder to leave a series of solder bumps on said substrate.
Claim 20
Independent Claim
164 words
A method for forming solder bumps over a substrate having a pattern of bond pad areas and a passivation layer deposited over said substrate and patterned to have openings in said bond pad areas, the method comprising the steps of: depositing a plurality of distinct metal layers over the substrate, the distinct metal layers being formed from different materials and including at least two layers formed from materials selected from the group consisting of aluminum, copper, and nickel-vanadium alloy; depositing a photoresistive layer over said metal layers: developing openings in said photoresistive layer over said bond pad areas on said substrate; plating solder over said metal layers into said openings; removing said photoresistive layer; and etching exposed portions of the metal layers from said substrate outside of said solder with a dilute phosphoric acid solution consisting essentially of phosphoric acid deionized (DI) water, acetic acid, and hydrogen peroxide that does not attack said solder to leave a series of solder bumps on said substrate.
Claim 21
Dependent Claim
18 words
A method as recited in claim 15 wherein said step of etching is performed at approximately 70° C.
Claim 22
Dependent Claim
26 words
A method as recited in claim 15 wherein said dilute phosphoric acid solution includes in a range of approximately 1 to 25% by volume phosphoric acid.
Claim 23
Dependent Claim
20 words
A method as recited in claim 17 wherein said dilute phosphoric acid solution includes approximately 10% by volume phosphoric acid.
Claim 24
Dependent Claim
26 words
A method as recited in claim 17 wherein said dilute phosphoric acid solution includes in a range of approximately 63 to 98% by volume DI water.
Claim 25
Dependent Claim
20 words
A method as recited in claim 19 wherein said dilute phosphoric acid solution includes approximately 84% by volume DI water.
Claim 26
Dependent Claim
26 words
A method as recited in claim 19 wherein said dilute phosphoric acid solution includes in a range of approximately 1 to 10% by volume acetic acid.
Claim 27
Dependent Claim
20 words
A method as recited in claim 21 wherein said dilute phosphoric acid solution includes approximately 5% by volume acetic acid.
Claim 28
Dependent Claim
26 words
A method as recited in claim 21 wherein said dilute phosphoric acid solution includes in a range of approximately 0.1 to 2% by volume hydrogen peroxide.
Claim 29
Dependent Claim
20 words
A method as recited in claim 23 wherein said dilute phosphoric acid solution includes approximately 1% by volume hydrogen peroxide.
Claim 30
Dependent Claim
42 words
A method as recited claim 15 wherein said step of depositing further comprises depositing a layer of aluminum over said substrate, depositing a layer of nickel-vanadium over said layer of aluminum, and depositing a layer of copper over said layer of nickel-vanadium.
Claim 31
Dependent Claim
32 words
A method as recited claim 15 wherein said step of depositing further comprises depositing a layer of nickel-vanadium over said substrate and depositing a layer of copper over said layer of nickel-vanadium.
Claim 32
Dependent Claim
71 words
A method as recited claim 15 wherein said step of depositing further comprises depositing a layer of aluminum over said substrate, depositing a layer of nickel-vanadium over said layer of aluminum, and depositing a layer of gold over said layer of nickel-vanadium, and wherein said method further includes a step of etching said layer of gold with potassium cyanide prior to said step of etching with a dilute phosphoric acid solution.
Claim 33
Dependent Claim
14 words
A method as recited in claim 15 wherein said solder comprises lead and tin.
Claim 34
Dependent Claim
20 words
A method as recited in claim 28 wherein approximately 60-95% of said solder is lead and approximately 5-40% is tin.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-04-16 | 1999-10-16 | 2000-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-16 | 2003-10-16 | 2004-04-16 | $3760.00 | Window Closed / Lapsed |
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