EP0261799A1
Expired / Lapsed
EP
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Method for producing a terminal electrode of a semi-conductor device
Assignee: Fujitsu Ltd
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Filing: 1987-08-24
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Granted: —
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Expires: 2007-08-24
Abstract
Abstract A method for producing a semiconductor device comprises the steps of: forming an insulating layer (13) on a semiconductor subs trate (11) provided with an electrode portion (12), forming a barrier metal layer (16) over the surface, forming a groove (18) in the barrier metal layer (16) so that the groove surrounds the electrode portion (12), introducing a stopper material (20) in the groove (18), forming a bump (22) on the barrier metal layer (16b) positioned on the electrode portion (12), and removing the barrier metal layer (16a) outside of the stopper (22). The stopper material (20) prevents the removal of the inside barrier metal layer (16b) during the removal of the outside barrier metal layer (16a).
Inventors
- 👤 Hitoshi Hasegawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 08:47
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10W72/01; H10W72/019; H10W72/90; H10W72/012; H10W72/01251; H10W72/01255; H10W72/221; H10W72/224; H10W72/231; H10W72/234; H10W72/241; H10W72/242; H10W72/244; H10W72/251; H10W72/252; H10W72/281; H10W72/283; H10W72/29; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/921; H10W72/923; H10W72/931; H10W72/934; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
133 words
A method for producing a semiconductor device comprising the steps of: forming an insulating layer (13) on a semiconductor substrate (11) provided with an electrode portion (12), forming a barrier metal layer (16) over its entire surface, forming a bump (22) on the barrier metal layer (16) positioned over the electrode portion (12), and removing the barrier metal layer (18) using the bump (22) as a mask, characterised by the additional steps of: forming a groove (18) in the barrier metal layer (16) so that it surrounds the electrode portion (12), and filling the groove (18) with a stopper material (20), the stopper material (20), preventing removal of the barrier metal layer (16b) inside the stopper material filled groove (18) during the removal of the barrier metal layer (16a) outside the groove (18).
Claim 2
Independent Claim
133 words
A method for producing a semiconductor device comprising the steps of: forming an insulating layer (13) on a semiconductor substrate (11) provided with an electrode portion (12), forming a barrier metal layer (16) over its entire surface, forming a bump (22) on the barrier metal layer (16) positioned over the electrode portion (12), and removing the barrier metal layer (18) using the bump (22) as a mask, characterised by the additional steps of: forming a groove (18) in the barrier metal layer (16) so that it surrounds the electrode portion (12), and filling the groove (18) with a stopper material (20), the stopper material (20), preventing removal of the barrier metal layer (16b) inside the stopper material filled groove (18) during the removal of the barrier metal layer (16a) outside the groove (18).
Claim 3
Dependent Claim
19 words
A method according to claim 1, wherein the insulating layer (13) is composed of phospho-silicate glass or silicon dioxide.
Claim 4
Dependent Claim
17 words
A method according to claim 1 or 2, wherein the electrode portion (12) is composed of aluminium.
Claim 5
Independent Claim
25 words
A method according to any one of the preceding claims, wherein the barrier metal layer (16) is composed of layers of titanium, copper and nickel.
Claim 6
Independent Claim
23 words
A method according to any one of the preceding claims, wherein the groove (18) is formed by wet-etching the barrier metal layer (16).
Claim 7
Independent Claim
26 words
A method according to any one of the preceding claims, wherein the stopper material (20) is formed by fusing gold or solder in the groove (18).
Claim 8
Independent Claim
25 words
A method according to any one of claims 1 to 5, wherein the stopper material (20) introduced into the groove (18) by a plating process.
Claim 9
Independent Claim
59 words
A method according to any one of claims 1 to 5, wherein the stopper material (20) is introduced into the groove (18) by the steps of: forming a bump layer (25) on the barrier metal layer (16) and filling the groove (18) by plating with the bump material, removing the barrier metal layer (16) positioned outside the groove (18).
Claim 10
Dependent Claim
28 words
A method according to claim 7 or 8, wherein the bump (22) includes a depending leg portion (31a) which fills the groove (18) to form the stopper material.
References Cited (Backward Citations)
US4293637A
Cited
EP0111823A2
Cited
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